UN4221 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | UN4221 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UN4221/4222/4223/4224
Silicon NPN epitaxial planer transistor
Unit: mm
4.0±0.2
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
marking
Resistance by Part Number
■
1
2
3
(R1)
(R2)
●
●
●
●
UN4221
UN4222
UN4223
UN4224
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
2.2kΩ
4.7kΩ
10kΩ
10kΩ
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
50
50
Internal Connection
V
500
mA
mW
˚C
C
R1
B
Total power dissipation
Junction temperature
Storage temperature
PT
300
Tj
150
R2
Tstg
–55 to +150
˚C
E
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
VCB = 50V, IE = 0
1
1
5
2
1
Collector cutoff current
ICEO
VCE = 50V, IB = 0
VEB = 6V, IC = 0
µA
UN4221
Emitter
UN4222
IEBO
mA
cutoff
current
UN4223/4224
Collector to base voltage
VCBO
VCEO
IC = 10µA, IE = 0
50
50
40
50
60
V
V
Collector to emitter voltage
IC = 2mA, IB = 0
Forward
current
transfer
ratio
UN4221
UN4222
hFE
VCE = 10V, IC = 100mA
UN4223/4224
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 5mA
0.25
0.2
V
V
V
Output voltage high level
Output voltage low level
VOH
VOL
VCC = 5V, VB = 0.5V, RL = 500Ω
VCC = 5V, VB = 3.5V, RL = 500Ω
4.9
UN4221/4224
Input
2.2
4.7
10
UN4222
R1
(–30%)
(+30%)
kΩ
resis-
tance
UN4223
Resistance ratio
0.8
1.0
0.22
1.2
R1/R2
UN4224
0.17
0.27
1
Transistors with built-in Resistor
UN4221/4222/4223/4224
Common characteristics chart
PT — Ta
400
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UN4221
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
100
400
IC/IB=10
Ta=25˚C
IB=1.0mA
VCE=10V
30
10
0.9mA
0.8mA
0.7mA
300
200
100
0
Ta=75˚C
3
1
0.6mA
0.5mA
Ta=75˚C
0.3
0.1
25˚C
25˚C
0.4mA
0.3mA
0.03
0.01
0.2mA
0.1mA
–25˚C
–25˚C
10
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
10000
100
24
20
16
12
8
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
4
3
1
0.03
0.01
0
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
V
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
2
Transistors with built-in Resistor
UN4221/4222/4223/4224
Characteristics charts of UN4222
IC — VCE
VCE(sat) — IC
hFE — IC
100
200
300
IC/IB=10
Ta=25˚C
VCE=10V
30
Ta=75˚C
250
IB=1.0mA
10
150
100
50
25˚C
0.9mA
0.8mA
200
150
100
50
3
1
0.7mA
0.6mA
Ta=75˚C
–25˚C
0.5mA
0.4mA
0.3
0.1
25˚C
0.3mA
0.2mA
0.1mA
–25˚C
0.03
0.01
0
0
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
12
10
8
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
6
30
10
0.3
0.1
4
2
3
1
0.03
0.01
0
0.1 0.3
1
3
10
30
(
100
)
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to base voltage VCB
V
Input voltage VIN
Output current IO mA
Characteristics charts of UN4223
IC — VCE
VCE(sat) — IC
hFE — IC
200
150
100
50
100
240
200
160
120
80
IC/IB=10
Ta=25˚C
Ta=75˚C
VCE=10V
30
10
25˚C
IB=1.0mA
0.9mA
3
1
0.8mA
Ta=75˚C
0.7mA
0.6mA
25˚C
0.3
0.1
–25˚C
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
40
–25˚C
0.03
0.01
0
0
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
( )
Collector current IC mA
(
)
Collector current IC mA
( )
V
Collector to emitter voltage VCE
3
Transistors with built-in Resistor
UN4221/4222/4223/4224
Cob — VCB
IO — VIN
VIN — IO
12
10
8
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
6
30
10
0.3
0.1
4
2
3
1
0.03
0.01
0
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN4224
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
200
150
100
50
100
IC/IB=10
Ta=25˚C
VCE=10V
30
10
Ta=75˚C
25˚C
IB=1.0mA
0.9mA
3
1
–25˚C
0.8mA
0.7mA
Ta=75˚C
0.6mA
0.5mA
0.3
0.1
25˚C
0.4mA
0.3mA
0.2mA
0.1mA
0.03
0.01
–25˚C
0
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
( )
V
(
)
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
12
10
8
10000
1000
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
300
100
300
100
30
10
6
30
10
3
1
4
2
3
1
0.3
0.1
0
0.1 0.3
1
3
10
30
(
100
)
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
( )
V
Collector to base voltage VCB
V
Input voltage VIN
(
)
Output current IO mA
4
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