UN511D [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | UN511D |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总17页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
Unit: mm
For digital circuits
2.1±0.1
0.425
1
1.25±0.1
0.425
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape
3
●
packing and magazine packing.
2
Resistance by Part Number
■
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
UN5111
UN5112
UN5113
UN5114
UN5115
UN5116
UN5117
UN5118
UN5119
UN5110
UN511D
UN511E
UN511F
UN511H
UN511L
UN511M
UN511N
UN511T
UN511V
UN511Z
6A
6B
6C
6D
6E
6F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
6H
6I
Internal Connection
6K
6L
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
–55 to +150
˚C
1
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
UN5111
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
ICEO
µA
UN5112/5114/511E/511D/511M/511N/511T
UN5113
Emitter
cutoff
current
UN5115/5116/5117/5110
UN511F/511H
UN5119
IEBO
VEB = –6V, IC = 0
mA
–1.5
UN5118/511L/511V
UN511Z
–2.0
– 0.4
Collector to base voltage
UN511N/511T/511V/511Z
–50
–50
–50
–50
35
VCBO
IC = –10µA, IE = 0
V
V
Collector to emitter voltage
UN511N/511T
VCEO
IC = –2mA, IB = 0
UN5111
UN5112/511E
60
UN5113/5114/511M
80
Forward
current
transfer
ratio
UN5115*/5116*/5117*/5110*
160
30
460
UN511F/511D/5119/511H hFE
UN5118/511L
VCE = –10V, IC = –5mA
20
UN511N/511T
UN511V
80
400
20
6
UN511Z
60
200
Collector to emitter saturation voltage
UN511V
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.25
VCE(sat)
VOH
V
V
IC = –10mA, IB = –1.5mA
Output voltage high level
Output voltage low level
UN5113
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
VOL
V
UN511D
UN511E
VCC = –5V, VB = –6V, RL = 1kΩ
Transition frequency
UN511Z
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 200MHz
80
150
10
fT
MHz
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
22
47
Input
resis-
tance
UN5116/511F/511L/511N/511Z
R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UN5118
UN5119
UN511H/511M/511V
2.2
* hFE rank classification (UN5115/5116/5117/5110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter
UN5111/5112/5113/511L
UN5114
Symbol
Conditions
min
0.8
typ
1.0
max
1.2
Unit
0.17
0.08
0.21
0.1
0.25
0.12
UN5118/5119
UN511D
4.7
UN511E
2.14
0.47
0.22
0.047
0.1
Resis-
tance
ratio
UN511F/511T
UN511H
R1/R2
0.17
0.27
UN511M
UN511N
UN511V
1.0
UN511Z
0.21
3
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Common characteristics chart
PT — Ta
240
200
160
120
80
40
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
Characteristics charts of UN5111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
40
0
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
4
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN5113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
V
)
( )
Collector current IC mA
Collector to emitter voltage VCE
5
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN5114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
Ta=75˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
V
)
(
)
( )
V
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
6
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
( )
–1
–3
–10 –30 –100 –300 –1000
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UN5116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
7
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN5117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Input voltage VIN
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
8
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UN5119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=75˚C
–3
–1
–0.7mA
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
9
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN5110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–30
–10
Ta=75˚C
–3
–1
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
( )
Output current IO mA
(
V
)
Input voltage VIN
Collector to base voltage VCB
10
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN511D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
40
0
IC/IB=10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN511E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
Ta=25˚C
VCE=–10V
–0.9mA
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Collector to emitter voltage VCE
11
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
Input voltage VIN
(
V
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN511F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
12
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN511H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Collector to emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN511L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
13
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN511M
IC — VCE
VCE(sat) — IC
hFE — IC
–10
500
400
300
200
100
0
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
–3
–1
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.3
–0.1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.03
–0.01
–25˚C
–0.5mA
–0.4mA
–0.3mA
–25˚C
40
–0.2mA
–0.1mA
–0.003
–0.001
0
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
10–4
10–3
10–2
10–1
1
–100
10
8
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3
–1
6
4
–0.3
–0.1
2
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Output current IO mA
( )
V
(
V
)
Input voltage VIN
Collector to base voltage VCB
14
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN511N
IC — VCE
VCE(sat) — IC
hFE — IC
Ta=75˚C
–25˚C
300
250
200
150
100
50
–10
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–1
–0.9mA
–0.8mA
–0.7mA
25˚C
–0.6mA
–0.5mA
Ta=75˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1
–50
–25
0
–25˚C
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–10
–100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN511T
IC — VCE
VCE(sat) — IC
hFE — IC
–200
–175
–150
–125
–100
–75
–10
300
250
200
150
100
50
IC/IB=10
VCE=–10V
Ta=25˚C
Ta=75˚C
IB=–1.0mA
–1
–0.1
–0.01
–0.9mA
–0.8mA
–0.7mA
–0.6mA
25˚C
Ta=75˚C
25˚C
–25˚C
–0.5mA
–0.4mA
–50
–25
0
–0.3mA
–0.2mA
–25˚C
–0.1mA
0
–1
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
15
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UN511V
IC — VCE
VCE(sat) — IC
hFE — IC
–10
12
10
8
–12
–10
–8
–6
–4
–2
0
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
Ta=75˚C
25˚C
–0.8mA
–1
–0.7mA
–0.6mA
–0.5mA
Ta=75˚C
–25˚C
6
25˚C
–0.1
4
–0.4mA
–0.3mA
–25˚C
2
–0.2mA
–0.1mA
0
–1
–0.01
–1
–10
–100
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
( )
V
Collector current IC mA
Collector to emitter voltage VCE
IO — VIN
VIN — IO
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
( )
V
(
)
Input voltage VIN
Output current IO mA
16
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN511Z
IC — VCE
VCE(sat) — IC
hFE — IC
300
250
200
150
100
50
–10
–200
–175
–150
–125
–100
–75
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
Ta=75˚C
–25˚C
–1
–0.9mA
–0.8mA
–0.7mA
25˚C
Ta=75˚C
–25˚C
–0.6mA
–0.5mA
–0.1
25˚C
–0.4mA
–0.3mA
–50
–25
0
–0.2mA
–0.1mA
0
–1
–0.01
–10
–100
–1000
0
–2
–4
–6
–8
–10 –12
–1
–10
–100
–1000
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–1000
–100
–10
–100
–10
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–1
–0.4
–0.01
–0.1
–1
–10
–100
–0.6
–0.8
–1
–1.2
–1.4
–1
–10
–100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
17
相关型号：
UN511DH
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, SiliconWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511DQ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511DR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511DS
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511DTX
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, SiliconWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511E
Silicon PNP epitaxial planer transistorWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511EH
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, SiliconWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511EQ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511ER
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511ES
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511ETX
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, SiliconWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
UN511F
Silicon PNP epitaxial planer transistorWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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PANASONIC
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