UN6112-SZ [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | UN6112-SZ |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon 晶体 小信号双极晶体管 开关 |
| 文件： | 总13页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/6118/
6119/6110/611D/611E/611F/611H/611L
Silicon PNP epitaxial planer transistor
Unit: mm
For digital circuits
6.9±0.1
4.0
2.5±0.1
1.05
±0.05
(1.45)
0.8
0.7
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
0.65 max.
●
MT-1 type package, allowing supply with the radial taping.
0.45+–00..105
Resistance by Part Number
■
2.5±0.5 2.5±0.5
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
1
2
3
UN6111
UN6112
UN6113
UN6114
UN6115
UN6116
UN6117
UN6118
UN6119
UN6110
UN611D
UN611E
UN611F
UN611H
UN611L
1 : Emitter
2 : Collector
3 : Base
—
—
MT-1 Type Package
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
Internal Connection
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
–50
V
–100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
400
Tj
150
Tstg
–55 to +150
˚C
1
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
UN6111
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
ICEO
µA
UN6112/6114/611E/611D
UN6113
Emitter
cutoff
current
UN6115/6116/6117/6110
UN611F/611H
UN6119
IEBO
VEB = –6V, IC = 0
mA
–1.5
UN6118/611L
–2.0
Collector to base voltage
Collector to emitter voltage
UN6111
VCBO
VCEO
IC = –10µA, IE = 0
–50
–50
35
V
V
IC = –2mA, IB = 0
UN6112/611E
Forward
current
60
UN6113/6114
80
hFE
VCE = –10V, IC = –5mA
transfer
ratio
UN6115*/6116*/6117*/6110*
UN611F/611D/6119/611H
UN6118/611L
160
30
460
20
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
V
Output voltage high level
Output voltage low level
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
UN6113
UN611D
UN611E
V
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = –5V, VB = –6V, RL = 1kΩ
Transition frequency
VCB = –10V, IE = 1mA, f = 200MHz
80
10
MHz
UN6111/6114/6115
UN6112/6117
22
UN6113/6110/611D/611E
UN6116/611F/611L
UN6118
47
Input
resis-
tance
R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UN6119
UN611H
2.2
1.0
0.21
0.1
4.7
2.14
0.47
0.22
UN6111/6112/6113/611L
UN6114
0.8
0.17
0.08
3.7
1.2
0.25
0.12
5.7
UN6118/6119
UN611D
Resis-
tance
ratio
R1/R2
UN611E
1.7
2.6
UN611F
0.37
0.17
0.57
0.27
UN611H
* hFE rank classification (UN6115/6116/6117/6110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Common characteristics chart
PT — Ta
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UN6111
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
160
120
80
40
0
–100
IC/IB=10
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–25˚C
–3
–1
–0.4mA
–0.3mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.2mA
–25˚C
–0.03
–0.01
–0.1mA
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–
3
–0.03
–0.01
–1
–0.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
3
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6112
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN6113
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
IB=–1.0mA
VCE=–10V
Ta=75˚C
25˚C
Ta=25˚C
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
–0.4mA
–0.3mA
–25˚C
–0.3
–0.1
Ta=75˚C
25˚C
–0.2mA
–0.1mA
–25˚C
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
( )
Collector current IC mA
(
V
)
( )
Collector current IC mA
Collector to emitter voltage VCE
4
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN6114
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–3
–1
Ta=75˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–1000
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–300
–100
–300
–100
–30
–10
–30
–10
–3
–1
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
(
V
)
(
)
( )
V
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
5
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6115
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Ta=75˚C
–3
–1
–0.5mA
–0.4mA
25˚C
–0.3mA
–0.2mA
Ta=75˚C
–0.3
–0.1
–25˚C
25˚C
–0.1mA
–0.03
–0.01
–25˚C
–0.1 –0.3
–1
–3
–10 –30 –100
0
–2
–4
–6
–8
–10 –12
( )
–1
–3
–10 –30 –100 –300 –1000
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
5
4
3
2
1
0
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UN6116
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
6
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN6117
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–3
–1
Ta=75˚C
Ta=75˚C
–0.3
–0.1
–0.3mA
–0.2mA
25˚C
25˚C
–25˚C
–25˚C
–0.1mA
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
6
5
4
3
2
1
0
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Input voltage VIN
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
7
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN6118
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
–240
–200
–160
–120
–80
–40
0
–100
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–3
–1
Ta=75˚C
25˚C
Ta=75˚C
–0.6mA
–0.5mA
–0.3
–0.1
–25˚C
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UN6119
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=75˚C
–3
–1
–0.7mA
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.6mA
–0.5mA
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
8
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN6110
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–30
–10
Ta=75˚C
–3
–1
25˚C
Ta=75˚C
–0.2mA
–0.1mA
–25˚C
–0.3
–0.1
25˚C
–25˚C
–0.03
–0.01
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
0
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
( )
Output current IO mA
(
V
)
Input voltage VIN
Collector to base voltage VCB
9
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN611D
IC — VCE
VCE(sat) — IC
hFE — IC
–60
–50
–40
–30
–20
–10
0
–100
160
120
80
40
0
IC/IB=10
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
–3
–1
25˚C
–0.3mA
–0.2mA
–25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
–0.03
–0.01
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UN611E
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–60
–50
–40
–30
–20
–10
0
400
300
200
100
0
IC/IB=10
IB=–1.0mA
Ta=25˚C
VCE=–10V
–0.9mA
–0.8mA –0.7mA
–30
–10
–3
–1
–0.3mA
–0.2mA
–0.6mA
–0.5mA
–0.4mA
Ta=75˚C
Ta=75˚C
–0.3
–0.1
25˚C
–0.1mA
25˚C
–25˚C
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
( )
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Collector to emitter voltage VCE
10
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
IO — VIN
VIN — IO
–10000
–100
6
5
4
3
2
1
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
(
)
Input voltage VIN
(
V
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UN611F
IC — VCE
VCE(sat) — IC
hFE — IC
–240
–200
–160
–120
–80
–40
0
–100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=–10V
Ta=75˚C
–30
–10
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–3
–1
25˚C
–25˚C
Ta=75˚C
–0.5mA
–0.3
–0.1
25˚C
–0.4mA
–0.3mA
–0.2mA
–0.03
–0.01
–25˚C
–0.1mA
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–0.2V
Ta=25˚C
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–30
–10
–3000
–1000
–3
–1
–300
–100
–0.3
–0.1
–30
–10
–0.03
–0.01
–3
–1
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
11
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Characteristics charts of UN611H
IC — VCE
VCE(sat) — IC
hFE — IC
–120
–100
–80
–60
–40
–20
0
–100
–10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–0.5mA
–0.4mA
Ta=75˚C
25˚C
–1
Ta=75˚C
25˚C
–0.3mA
–25˚C
–0.2mA
–0.1
40
–25˚C
–0.1mA
–0.01
0
0
–2
–4
–6
–8
–10 –12
–1
–3
–10 –30 –100 –300 –1000
–0.1 –0.3
–1
–3
–10 –30 –100
( )
V
Collector to emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UN611L
IC — VCE
VCE(sat) — IC
hFE — IC
–100
–240
–200
–160
–120
–80
–40
0
240
200
160
120
80
IC/IB=10
VCE=–10V
Ta=25˚C
–30
–10
–3
–1
IB=–1.0mA
–0.8mA
Ta=75˚C
Ta=75˚C
25˚C
–0.3
–0.1
–0.6mA
25˚C
–25˚C
–0.4mA
–0.2mA
–25˚C
40
–0.03
–0.01
0
–1
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–3
–10 –30 –100 –300 –1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
12
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
–100
–10
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–1
–0.1
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–3
–10 –30 –100
(
V
)
(
)
Collector to base voltage VCB
Output current IO mA
13
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