UN921KJ [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | UN921KJ |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总19页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR921xJ Series (UN921xJ Series)
Silicon NPN epitaxial planar type
Unit: mm
+0.05
For digital circuits
1.60
–0.03
+0.03
0.12
–0.01
1.00 0.05
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
1
2
• SS-Mini type package, allowing automatic insertion through tape
packing.
0.27 0.02
(0.50)(0.50)
■ Resistance by Part Number
5˚
Marking Symbol (R1)
(R2)
• UNR9210J (UN9210J) 8L
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
• UNR9211J (UN9211J) 8A
• UNR9212J (UN9212J) 8B
• UNR9213J (UN9213J) 8C
• UNR9214J (UN9214J) 8D
• UNR9215J (UN9215J) 8E
• UNR9216J (UN9216J) 8F
• UNR9217J (UN9217J) 8H
• UNR9218J (UN9218J) 8I
• UNR9219J (UN9219J) 8K
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
C
E
B
• UNR921AJ
• UNR921BJ
• UNR921CJ
8X
8Y
8Z
100 kΩ
100 kΩ
R2
• UNR921DJ (UN921DJ) 8M
• UNR921EJ (UN921EJ) 8N
• UNR921FJ (UN921FJ) 8O
• UNR921KJ (UN921KJ) 8P
• UNR921LJ (UN921LJ) 8Q
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
• UNR921MJ
• UNR921NJ
EL
EX
• UNR921TJ (UN921TJ) EZ
• UNR921VJ FD
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
100
mA
mW
°C
125
Total power dissipation
Junction temperature
Storage temperature
Tj
125
Tstg
−55 to +125
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00039BED
1
UNR921xJ Series
Transistors with built-in Resistor
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cut-off current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter- UNR9210J/9215J/
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
µA
µA
mA
ICEO
IEBO
0.01
9216J/9217J/921BJ
base
cut-off
current
UNR9213J/921AJ
0.1
0.2
UNR9212J/9214J/921DJ/
(Collector 921EJ/921MJ/921NJ/921TJ
open)
UNR9211J
0.5
1.0
1.5
2.0
20
UNR921FJ/921KJ
UNR9219J
UNR9218J/921CJ/921LJ/921VJ
Forward UNR921VJ
hFE
VCE = 10 V, IC = 5 mA
6
current
transfer
ratio
UNR9218J/921KJ/921LJ
20
30
35
60
80
UNR9219J/921DJ/921FJ
UNR9211J
UNR9212J/921EJ
UNR9213J/9214J/921AJ/
921CJ/921MJ
UNR921NJ/921TJ
80
400
460
UNR9210J/9215J/9216J/
9217J/921BJ
160
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR9213J/921BJ/921KJ
UNR921DJ
VCE(sat)
VOH
IC = 10 mA, IB = 0.3 mA
0.25
0.2
V
V
V
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCC = 5 V, VB = 5 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
4.9
VOL
UNR921EJ
UNR921AJ
Transition frequency
fT
150
MHz
Input
resistance UNR9219J
UNR921MJ/921VJ
UNR9218J
R1
−30% 0.51 +30%
kΩ
1
2.2
4.7
10
UNR9216J/921FJ/921LJ/921NJ
UNR9211J/9214J/9215J/921KJ
UNR9212J/9217J/921TJ
UNR9210J/9213J/921DJ/921EJ
UNR921AJ/921BJ
22
47
100
SJH00039BED
2
Transistors with built-in Resistor
UNR921xJ Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Symbol
R2
Conditions
Min
Typ
47
Max
Unit
kΩ
Emitter-base resistance UNR921CJ
Rasistance UNR921MJ
−30%
+30%
R1/R2
0.047
0.1
ratio
UNR921NJ
UNR9218J/9219J
UNR9214J
0.08
0.17
0.10
0.21
0.47
0.47
1.0
0.12
0.25
UNR921TJ
UNR921FJ
0.37
0.57
UNR921AJ/921VJ
UNR9211J/9212J/9213J/921LJ
UNR921KJ
0.8
1.70
1.70
3.7
1.0
1.2
2.60
2.60
5.7
2.13
2.14
4.7
UNR921EJ
UNR921DJ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR9210J
IC VCE
VCE(sat) IC
hFE IC
102
10
60
400
300
200
100
0
IB = 1.0 mA
Ta = 25°C
IC / IB = 10
VCE = 10 V
0.9 mA
0.8 mA
50
40
Ta = 75°C
0.4 mA
0.5 mA
25°C
30
20
10
0
0.3 mA
0.6 mA
1
0.7 mA
Ta = 75°C
−25°C
0.1 mA
25°C
10 −1
−25°C
10 −2
10 −1
1
10
102
0
2
4
6
8
10
12
1
10
102
103
(
V
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
SJH00039BED
3
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
104
103
102
10
1
6
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
102
10 −1
1
10
102
1
10
0.4
0.6
( )
Input voltage VIN V
0.8
1.0
1.2
1.4
(
)
Output current IO mA
( )
V
Collector-base voltage VCB
Characteristics charts of UNR9211J
IC VCE
VCE(sat) IC
hFE IC
160
102
10
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
1
25°C
25°C
Ta = 75°C
0.2 mA
−25°C
40
10 −1
−25˚C
0.1 mA
0
10 −2
10 −1
0
2
4
6
8
10
12
1
10
102
1
10
102
103
(
V
)
(
)
(
)
Collector-emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
102
10
104
103
102
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
1
0.4
10 −1
1
10
102
1
10
102
0.6
0.8
1.0
1.2
)
1.4
( )
V
(
)
(
Collector-base voltage VCB
Output current IO mA
Input voltage VIN
V
SJH00039BED
4
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9212J
IC VCE
VCE(sat) IC
hFE IC
102
400
300
200
100
0
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
10
1
120
80
40
0
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
0.3 mA
0.2 mA
25°C
25°C
Ta = 75°C
−25°C
10 −1
−25°C
0.1 mA
10 −2
10 −1
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
)
(
)
Collector current IC mA
(
V
)
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
104
103
102
10
1
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
10
1
10 −1
10 −2
10 −1
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
( )
V
(
)
Collector-base voltage VCB
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9213J
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
120
0.6 mA
0.5 mA
0.4 mA
−25°C
80
1
0.3 mA
Ta = 75°C
25°C
0.2 mA
10 −1
40
−25°C
0.1 mA
10 −2
10 −1
0
102
103
1
10
102
0
2
4
6
8
10
12
1
10
(
V
)
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
SJH00039BED
5
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
104
103
102
10
1
6
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
( )
V
(
)
Collector-base voltage VCB
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9214J
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
1
25°C
Ta = 75°C
−25°C
25°C
10 −2
0.2 mA
0.1 mA
−25°C
10 −1
10 −1
103
1
10
102
0
2
4
6
8
10
12
1
10
102
(
V
)
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
V
)
Collector-base voltage VCB
(
)
Output current IO mA
( )
V
Input voltage VIN
SJH00039BED
6
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9215J
IC VCE
VCE(sat) IC
hFE IC
102
10
400
300
200
100
0
160
120
80
40
0
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
1
25°C
0.3 mA
−25°C
Ta = 75°C
0.2 mA
0.1 mA
25°C
10 −1
−25°C
10 −2
10 −1
102
103
1
10
102
1
10
0
2
4
6
8
10
12
(
)
(
V
)
Collector current IC mA
Collector-emitter voltage VCE
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
10 −1
1
10
102
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
( )
V
Collector-base voltage VCB
(
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR9216J
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
Ta = 75°C
25°C
0.9 mA
120
300
200
100
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
0.3 mA
80
40
0
1
Ta = 75°C
0.2 mA
25°C
10 −1
0.1 mA
10
−25°C
10 −2
10 −1
102
103
1
10
102
0
2
4
6
8
12
1
10
(
V
)
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
SJH00039BED
7
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
104
103
102
10
1
6
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
10 −1
Collector-base voltage VCB
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
(
)
V
(
)
(
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR9217J
IC VCE
VCE(sat) IC
hFE IC
120
102
10
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
60
1
Ta = 75°C
Ta = 75°C
25°C
40
25°C
−25°C
10 −1
20
0
0.1 mA
10
−25°C
10 −2
10 −1
0
2
4
6
8
12
1
10
102
1
10
102
103
(
V
)
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
0
10 −2
10 − −1
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
1
10
102
( )
V
Collector-base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
SJH00039BED
8
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR9218J
IC VCE
VCE(sat) IC
hFE IC
102
240
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
10
IB = 1.0 mA
0.9 mA
160
0.8 mA
0.7 mA
Ta = 75°C
1
10 −1
10 −2
120
80
40
0
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
25°C
−25°C
25°C
0.3 mA
0.2 mA
0.1 mA
−25°C
10 −1
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
V
)
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
102
10
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
VO = 0.2 V
Ta = 25°C
Ta = 25°C
1
10 −1
10 −2
10 −1
Collector-base voltage VCB
1
10
102
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
V
(
)
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9219J
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
40
0
240
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
80
40
0
Ta = 75°C
1
25°C
−25°C
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
25°C
10 −1
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
1
10
102
1
10
102
103
0
2
4
6
8
10
12
(
V
)
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
Collector current IC mA
SJH00039BED
9
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
6
102
104
103
102
10
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
102
10 −1
1
10
102
1
10
0.4
0.6
0.8
1.0
1.2
1.4
(
)
( )
V
( )
V
Output current IO mA
Input voltage VIN
Collector-base voltage VCB
Characteristics charts of UNR921AJ
IC VCE
VCE(sat) IC
hFE IC
1
IC / IB = 10
Ta = 25°C
VCE = 10 V
Ta = 75°C
IB = 0.5 mA
400
120
0.4 mA
25°C
300
200
100
0
0.3 mA
−25°C
80
10 −1
0.2 mA
Ta = 75°C
25°C
40
0.1 mA
−25°C
10 −2
0
10 −1
1
10
102
103
10 −1
1
10
102
0
2
4
6
8
10
(
)
(
)
Collector current IC mA
(
V
)
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
10
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
1
10
10 −1
10 −2
1
1
0
10
20
1
10
)
Output current IO mA
102
0
1
2
3
(
V
)
( )
Input voltage VIN V
(
Collector-base voltage VCB
SJH00039BED
10
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921BJ
IC VCE
VCE(sat) IC
hFE IC
120
10
Ta = 25°C
IC / IB = 10
VCE = 10 V
400
300
200
100
0
IB = 0.5 mA
Ta = 75°C
100
80
60
40
20
0
0.4 mA
0.3 mA
25°C
1
−25°C
0.2 mA
0.1 mA
10 −1
25°C
Ta = 75°C
−25°C
10 −2
10 −1
102
103
1
10
102
0
2
4
6
8
10
1
10
(
V
)
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
10
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
1
1
10 −1
1
10 −1
10 −1
1
10
102
0
10
20
30
40
0.4
0.8
1.2
1.6
(
V
)
Collector-base voltage VCB
(
)
Output current IO mA
( )
V
Input voltage VIN
Characteristics charts of UNR921CJ
IC VCE
VCE(sat) IC
hFE IC
1
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
300
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Ta = 75°C
25°C
200
100
0
80
−25°C
0.3 mA
10 −1
Ta = 75°C
25°C
0.2 mA
40
−25°C
0.1 mA
10 −2
0
102
103
1
10
102
1
10
0
2
4
6
8
10
(
)
Collector current IC mA
(
)
Collector current IC mA
(
V
)
Collector-emitter voltage VCE
SJH00039BED
11
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
10
102
VO = 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
VO = 5 V
Ta = 25°C
10
1
10
1
10 −1
10 −1
1
1
10
102
0
10
20
30
40
0
0.4
0.8
(
)
(
V
)
Output current IO mA
Collector-base voltage VCB
( )
V
Input voltage VIN
Characteristics charts of UNR921DJ
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
40
0
30
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA 0.5 mA
25°C
−25°C
0.4 mA
0.7 mA
25
20
15
10
5
0.3 mA
0.6 mA
IB = 1.0 mA
1
0.2 mA
0.1 mA
Ta = 75°C
25°C
10 −1
−25°C
10 −2
10 −1
0
102
103
1
10
102
1
10
0
2
4
6
8
10
12
(
)
Collector current IC mA
(
V
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
6
104
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
5
4
3
2
1
103
102
10
1
1
10 −1
10 −2
0
10 −1
1
10
102
10 −1
1
10
102
1.5
2.0
2.5
3.0
3.5
4.0
(
)
V
(
)
Collector-base voltage VCB
Output current IO mA
(
V
)
Input voltage VIN
SJH00039BED
12
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921EJ
IC VCE
VCE(sat) IC
hFE IC
60
102
160
120
80
IB = 1.0 mA
0.7 mA
Ta = 25°C
IC / IB = 10
0.9 mA
0.6 mA
VCE = 10 V
0.8 mA
50
Ta = 75°C
10
40
25°C
−25°C
0.2 mA
0.3 mA
0.4 mA
30
0.5 mA
1
10 −1
10 −2
Ta = 75°C
0.1 mA
20
10
0
25°C
40
−25°C
0
0
2
4
6
8
10
12
10 −1
1
10
102
1
10
102
103
(
V
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
f = 1MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
5
4
3
2
1
1
10 −1
10 −2
10 −1
0
10 −1
1
10
102
1.5
2.0
2.5
3.0
3.5
4.0
1
10
102
( )
V
Collector-base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR921FJ
IC VCE
VCE(sat) IC
hFE IC
240
102
10
160
120
80
Ta = 25°C
IC / IB = 10
VCE = 10 V
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
IB = 1.0 mA
25°C
−25°C
0.5 mA
0.4 mA
0.3 mA
25°C
10 −1
40
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
0
0
2
4
6
8
10
12
1
10
102
1
10
Collector current IC mA
102
103
(
V
)
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
SJH00039BED
13
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
6
104
103
102
10
1
102
VO = 5 V
Ta = 25°C
VO = 0.2 V
f = 1 MHz
IE = 0
T
a
= 25°C
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
102
( )
V
(
(
)
Collector-base voltage VCB
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR921KJ
IC VCE
VCE(sat) IC
hFE IC
102
10
240
200
160
120
80
240
VCE = 10 V
IC / IB = 10
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
1
120
1.0 mA
0.8 mA
Ta = 75°C
−25°C
80
0.6 mA
25°C
−25°C
10 −1
0.4 mA
0.2 mA
10 12
40
40
10 −2
0
0
102
103
1
10
102
103
1
10
0
2
4
6
8
(
)
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
VIN IO
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
102
1
10
102
10 −1
1
10
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
SJH00039BED
14
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921LJ
IC VCE
VCE(sat) IC
hFE IC
102
10
240
200
160
120
80
240
200
160
120
80
VCE = 10 V
Ta = 25°C
IC / IB = 10
Ta = 75°C
IB = 1.0 mA
25°C
0.8 mA
1
0.6 mA
−25°C
Ta = 75°C
25°C
0.4 mA
10 −1
40
40
−25°C
0.2 mA
10 −2
0
0
102
103
1
10
102
103
0
2
4
6
8
10
12
1
10
( )
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
VIN IO
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
102
1
10
102
10 −1
1
10
( )
V
Collector-base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR921MJ
IC VCE
VCE(sat) IC
hFE IC
10
1
240
500
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
200
160
120
80
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
25°C
25°C
10 −1
0.5 mA
0.4 mA
0.3 mA
−25°C
−25˚C
0.2 mA
10 −2
40
0.1 mA
0
10 −3
0
2
4
6
8
10
12
1
10
102
103
1
10
102
103
(
V
)
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00039BED
15
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
5
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
10 −1
Collector-base voltage VCB
1
10
102
0.4
0.6
0.8
1.0
1.2
)
1.4
1
10
102
(
(
)
V
Input voltage VIN
V
(
)
Output current IO mA
Characteristics charts of UNR921NJ
IC VCE
VCE(sat) IC
hFE IC
10
160
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
120
80
40
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
1
0.4 mA
25°C
0.3 mA
Ta = 75°C
25°C
−25°C
0.2 mA
0.1 mA
10 −1
−25°C
10 −2
0
103
1
10
102
103
0
2
4
6
8
10
12
1
10
102
(
)
(
V
)
Collector current IC mA
Collector-emitter voltage VCE
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
1
10 −1
10 −2
1
1
10
102
10 −1
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
( )
V
(
)
Collector-base voltage VCB
(
V
)
Output current IO mA
Input voltage VIN
SJH00039BED
16
Transistors with built-in Resistor
UNR921xJ Series
Characteristics charts of UNR921TJ
IC VCE
VCE(sat) IC
hFE IC
VCE = 10 V
Ta = 75°C
103
160
120
80
40
0
400
300
200
100
0
IC / IB = 10
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
25°C
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
102
−25°C
25°C
−25°C
0.2 mA
0.1 mA
10
1
10
102
10 −1
1
10
102
0
2
4
6
8
10
(
)
(
)
(
V
)
Collector current IC mA
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
102
102
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
10
1
10
10 −1
1
10 −2
10 −3
10 −1
0.75
10 −3 10 −2
10 −1
1
10
102
1
10
102
0.25
1.25
(
)
V
Collector-base voltage VCB
(
V
)
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR921VJ
IC VCE
VCE(sat) IC
hFE IC
10
160
240
200
160
120
80
VCE = 10 V
IC / IB = 10
Ta = 25°C
120
80
40
0
IB = 1.0 mA
1
10 −1
10 −2
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
0.6 mA
Ta = 75°C
25°C
0.5 mA
0.4 mA
−25°C
−25°C
40
0.3 mA
0.2 mA
0
103
4
6
8
10
1
10
102
103
0
2
10
12
1
102
(
V
)
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
SJH00039BED
17
UNR921xJ Series
Transistors with built-in Resistor
Cob VCB
IO VIN
VIN IO
102
6
104
103
102
10
1
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
5
4
3
2
1
0
10
1
10 −1
10 −2
10 −1
102
1
10
102
1
10
0.4
0.6
0.8
1.0
1.2
1.4
( )
V
Collector-base voltage VCB
(
)
Output current IO mA
(
V
)
Input voltage VIN
SJH00039BED
18
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
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(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
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as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
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2003 SEP
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