UNA0206 [PANASONIC]
Transistor array to drive the small motor; 晶体管阵列来驱动小型电动机型号: | UNA0206 |
厂家: | PANASONIC |
描述: | Transistor array to drive the small motor |
文件: | 总4页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Small Signal Transistor Arrays
UNA0206 (UN206)
Transistor array to drive the small motor
Features
Small and lightweight
■
Unit: mm
■
■
Low power consumption (low VCE(sat) transistor used)
Protective diode incorporated (C-E monolithic)
+0.1
–0.0
0.2
0.4±0.1
3 2 1
■
(0.5)
5
4
■
Low-voltage drive
Applications
Video cameras
■
■
6
7
8
9 10
0.9±0.1
■
Cameras
Portable CD players
6.5±0.3
■
12˚
■
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
SO10-G1 Package
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
±20
±18
V
±5
V
Internal Connection
±1
A
1
2
3
4
5
10
9
Total power dissipation
Junction temperature
Storage temperature
PT*
0.5
W
˚C
˚C
Tj
150
8
Tstg
–55 to +150
7
6
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
Note.) The Part number in the Parenthesis shows conventional part number.
1
Small Signal Transistor Arrays
UNA0206
Electrical Characteristics (Ta=25±2˚C)
■
Parameter
Symbol
Conditions
min
typ
max
1
Unit
(NPN) VCB = 20V, IE = 0
Collector cutoff current
ICBO
µA
(PNP) VCB = –20V, IE = 0
(NPN) VCE = 18V, RBE = 100kΩ
(PNP) VCE = –18V, RBE = 100kΩ
(NPN) IC = 10µA, IE = 0
–1
10
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
ICER
µA
V
–10
20
–20
18
VCBO
(PNP) IC = –10µA, IE = 0
(NPN) IC = 1mA, IB = 0
VCEO
V
(PNP) IC = –1mA, IB = 0
–18
5
(NPN) IE = 10µA, IC = 0
Emitter to base voltage
Forward voltage (DC)
VEBO
VF
V
V
(PNP) IE = –10µA, IC = 0
–5
IF = 1A
1.5
360
360
(NPN) VCE = 2V, IC = 0.5A*
(PNP) VCE = –2V, IC = – 0.5A*
(NPN) VCE = 2V, IC = 1.5A*
(PNP) VCE = –2V, IC = – 1.5A*
(NPN) IC = 0.3A, IB = 10mA
(PNP) IC = – 0.3A, IB = –10mA
(NPN) IC = 0.7A, IB = 10mA
(PNP) IC = – 0.7A, IB = –10mA
(NPN) VCB = 6V, IE = 50mA, f = 200MHz
(PNP) VCB = –6V, IE = –50mA, f = 200MHz
(NPN) VCB = 6V, IE = 0, f = 1MHz
(PNP) VCB = –6V, IE = 0, f = 1MHz
90
90
50
50
Forward current transfer ratio
hFE1
Forward current transfer ratio
hFE2
0.2
– 0.2
0.6
Collector to emitter saturation voltage VCE(sat)1
Collector to emitter saturation voltage VCE(sat)2
V
V
– 0.6
150
200
20
Transition frequency
fT
MHz
pF
Collector output capacitance
*Pulse measurement
Cob
40
Characteristics charts of PNP transistor block
PT — Ta
IC — VCE
IC — VBE
0.6
0.5
0.4
0.3
0.2
0.1
0
–3.0
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
VCE=–2V
Ta=25˚C
–2.5
–2.0
–1.5
–1.0
–0.5
0
25˚C
IB=–14mA
–12mA
Ta=75˚C
–25˚C
–10mA
–8mA
–6mA
–4mA
–2mA
0
20 40 60 80 100 120 140 160
0
–0.4 –0.8 –1.2 –1.6 –2.0 –2.4
0
–2
–4
–6
–8
–10 –12
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
( )
V
Collector to emitter voltage VCE
2
Small Signal Transistor Arrays
UNA0206
VCE(sat) — IC
hFE — IC
Cob — VCB
–10
300
120
100
80
60
40
20
0
IC/IB=30
f=1MHz
IE=0
Ta=25˚C
VCE=–2V
–3
–1
250
200
150
100
50
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.3
–0.1
–25˚C
–25˚C
–0.03
–0.01
–0.003
–0.001
0
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
–1
–3
–10
–30
–100
(
A
)
(
)
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
A
Characteristics charts of NPN transistor block
PT — Ta
IC — VCE
IC — VBE
3.0
2.5
2.0
1.5
1.0
0.5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25˚C
IB=14mA
VCE=2V
25˚C
12mA
10mA
Ta=75˚C
–25˚C
8mA
6mA
4mA
2mA
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
0
20 40 60 80 100 120 140 160
( )
V
( )
Base to emitter voltage VBE V
(
)
Collector to emitter voltage VCE
Ambient temperature Ta ˚C
VCE(sat) — IC
hFE — IC
Cob — VCB
300
250
200
150
100
50
60
50
40
30
20
10
0
10
IC/IB=30
f=1MHz
IE=0
Ta=25˚C
VCE=2V
3
1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
0.3
0.1
–25˚C
–25˚C
0.03
0.01
0.003
0.001
0
0.01 0.03
0.1 0.3
1
3
10
1
3
10
30
100
0.01 0.03
0.1 0.3
1
3
10
( )
A
( )
V
(
)
A
Collector current IC
Collector to base voltage VCB
Collector current IC
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
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from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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2001 MAR
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