UNR1210R [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN;
| 型号： | UNR1210R |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN 开关 晶体管 |
| 文件： | 总14页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR121x Series (UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.5 0.1
6.9 0.1
(1.5)
(1.5)
(1.0)
■ Features
R 0.9
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
R .7
•
M type package allowing easy automatic and manual insertin as
well as stand-alone fixing to the printed circuit board
(0.85)
0.45 0.05
■ Resistance by Part Number
05 0.1
(R1)
)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR1210 (UN1210)
UNR1211 (UN1211)
UNR1212 (UN1212)
UNR1213 (UN1213)
UNR1214 (UN1214)
UNR1215 (UN125
UNR1216 (UN1216)
UNR1217 (UN127)
UNR1218 N1218)
UNR121(UN1219)
UNR121D (UN121D)
UNR12(UN121E)
UNR(UN121F)
UNRK (UN121K)
UR121L (UN21L)
47 kΩ
10 kΩ
2kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
47
4.kΩ
1kΩ
4.7 kΩ
0 kΩ
22 kΩ
47 kΩ
47 kΩ
3
2
1
1: Base
2: Collector
3: Emitter
(2.5) (2.5)
M-A1 Package
Internal Connection
R1
B
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
C
E
R2
■ Aximum Ratings Ta = 25°C
eter
Symbol
Rating
Unit
V
Collector-oltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
100
m
mW
°C
400
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00003BED
1
UNR121x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR1211
cutoff current UNR1212/1214/121D/121E
(Collector open) UNR1213
UNR1210/1215/1216/1217
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
µA
µA
mA
ICEO
IEBO
UNR121F/121K
UNR1219
UNR1218/121L
Forward current UNR1211
transfer ratio UNR1212/121E
UNR1213/1214
hFE
VCE = 10 V, IC = 5 mA
35
60
80
UNR1210 */1215 */1216 */
1217 *
160
460
UNR1219/121D/121F
UNR1218/121K/121L
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR1213/121K
30
20
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
0.2
V
V
V
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
UNR121D
UNR121E
Transition frequency
Input resistance UNR1211/1214/1215/121K
UNR1212/1217
fT
80
10
MHz
R1
−30%
+30%
kΩ
22
UNR1210/1213/121D/121E
UNR1216/121F/121L
UNR1218
47
4.7
0.51
1
UNR1219
Resistance ratio UNR1211/1212/1213/121L R1/R2
0.8
1.0
0.21
0.1
4.7
2.14
0.47
2.13
1.2
UNR1214
0.17
0.08
0.25
0.12
UNR1218/1219
UNR121D
UNR121E
UNR121F
UNR121K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification (UNR1110/1115/1116/1117)
*
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
SJH00003BED
2
UNR121x Series
Common characteristics chart
PT Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR1210
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
60
100
10
IB = 1.0 mA
Ta = 25°C
IC / IB = 10
VCE = 10 V
0.9 mA
0.8 mA
50
40
Ta = 75°C
25°C
0.4 mA
0.5 mA
30
20
10
0
0.3 mA
1
0.6 mA
0.7 mA
Ta = 75°C
−25°C
0.1 mA
25°C
0.1
0.01
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
(
)
Collector current IC mA
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = 5 V
Ta = 25°C
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
3
UNR121x Series
Characteristics charts of UNR1211
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
300
200
100
0
IC / IB = 10
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
VCE = 10 V
Ta = 75°C
0.7 mA
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
1
25°C
25°C
0.2 mA
Ta = 75°C
−25°C
40
0.1
0.01
−25˚C
0.1 mA
10 12
0
0
2
4
6
8
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
100
10
6
5
4
3
2
1
0
104
103
102
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
Characteristics charts of UNR1212
IC VCE
VCE(sat) IC
hFE IC
100
10
160
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
120
80
40
0
300
200
100
0
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
1
0.3 mA
0.2 mA
25°C
25°C
Ta = 75°C
−25°C
0.1
0.01
−25°C
0.1 mA
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
SJH00003BED
4
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR1213
IC VCE
VCE(sat) IC
hFE IC
160
400
300
200
100
0
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
120
0.6 mA
0.5 mA
0.4 mA
−25°C
80
1
0.3 mA
Ta = 75°C
25°C
0.2 mA
40
0.1
0.01
−25°C
0.1 mA
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00003BED
5
UNR121x Series
Characteristics charts of UNR1214
IC VCE
VCE(sat) IC
hFE IC
160
400
300
200
100
0
100
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
1
25°C
Ta = 75°C
−25°C
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1215
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
120
300
200
100
0
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
80
1
25°C
0.3 mA
Ta = 75°C
−25°C
25°C
0.2 mA
0.1 mA
0.1
0.01
40
−25°C
0
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
6
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1216
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
160
100
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
Ta = 75°C
25°C
0.9 mA
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
80
1
0.3 mA
Ta = 75°C
0.2 mA
25°C
40
0.1
0.1 mA
−25°C
0
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
7
UNR121x Series
Characteristics charts of UNR1217
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
100
10
120
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
1
60
Ta = 75°C
Ta = 75°C
25°C
40
25°C
−25°C
0.1
0.01
20
0.1 mA
10
−25°C
0
0.1
1
10
100
1
10
100
1000
0
2
4
6
8
12
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current I (mA)
O
Collector-base voltage VCB (V)
Input voltage VIN (V)
Characteristics charts of UNR1218
IC VCE
VCE(sat) IC
hFE IC
160
240
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
120
80
40
0
IB = 1.0 mA
0.9 mA
160
120
80
40
0
0.8 mA
0.7 mA
Ta = 75°C
1
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
25°C
−25°C
25°C
0.1
0.01
0.3 mA
0.2 mA
0.1 mA
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
8
UNR121x Series
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1219
IC VCE
VCE(sat) IC
hFE IC
100
10
160
120
80
40
0
240
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
0.8 mA
160
0.7 mA
0.6 mA
Ta = 75°C
120
1
25°C
Ta = 75°C
−25°C
0.5 mA
0.4 mA
80
25°C
0.3 mA
0.1
0.01
40
0
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
V
= 0.2 V
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
TaO= 25°C
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00003BED
9
UNR121x Series
Characteristics charts of UNR121D
IC VCE
VCE(sat) IC
hFE IC
100
10
30
160
120
80
40
0
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
25°C
25
20
15
10
5
−25°C
IB = 1.0 mA
1
0.2 mA
0.1 mA
Ta = 75°C
25°C
0.1
0.01
−25°C
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121E
IC VCE
VCE(sat) IC
hFE IC
100
10
60
160
IB = 1.0 mA
0.7 mA
IC / IB = 10
Ta = 25°C
0.9 mA
0.6 mA
VCE = 10 V
0.8 mA
50
Ta = 75°C
120
80
40
0
40
25°C
−25°C
0.2 mA
0.3 mA
0.4 mA
30
1
0.5 mA
Ta = 75°C
0.1 mA
20
25°C
0.1
0.01
10
0
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00003BED
10
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR121F
IC VCE
VCE(sat) IC
hFE IC
240
100
10
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
IB = 1.0 mA
25°C
−25°C
0.5 mA
0.4 mA
0.3 mA
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
= 25°C
f = 1 MHz
IE = 0
Ta = 25°C
T
a
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
11
UNR121x Series
Characteristics charts of UNR121K
IC VCE
VCE(sat) IC
hFE IC
100
10
240
200
160
120
80
240
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
1
120
1.0 mA
0.8 mA
Ta = 75°C
−25°C
80
25°C
0.6 mA
−25°C
0.1
0.01
0.4 mA
0.2 mA
10 12
40
40
0
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
VIN IO
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1
10
100
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR121L
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
240
100
VCE = 10 V
IC / IB = 10
Ta = 25°C
200
10
1
Ta = 75°C
25°C
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
−25°C
Ta = 75°C
25°C
80
40
0
0.4 mA
0.2 mA
0.1
0.01
40
−25°C
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
12
UNR121x Series
Cob VCB
VIN IO
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
SJH00003BED
13
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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