UNR1213 [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | UNR1213 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总14页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR121x Series (UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.5 0.1
6.9 0.1
(1.5)
(1.5)
(1.0)
■ Features
R 0.9
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
R 0.7
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
(0.85)
0.45 0.05
■ Resistance by Part Number
0.55 0.1
(R1)
(R2)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR1210 (UN1210)
UNR1211 (UN1211)
UNR1212 (UN1212)
UNR1213 (UN1213)
UNR1214 (UN1214)
UNR1215 (UN1215)
UNR1216 (UN1216)
UNR1217 (UN1217)
UNR1218 (UN1218)
UNR1219 (UN1219)
UNR121D (UN121D)
UNR121E (UN121E)
UNR121F (UN121F)
UNR121K (UN121K)
UNR121L (UN121L)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
3
2
1
1: Base
2: Collector
3: Emitter
(2.5) (2.5)
M-A1 Package
Internal Connection
R1
B
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
C
E
R2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
100
mA
mW
°C
400
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00003BED
1
UNR121x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR1211
cutoff current UNR1212/1214/121D/121E
(Collector open) UNR1213
UNR1210/1215/1216/1217
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
µA
µA
mA
ICEO
IEBO
UNR121F/121K
UNR1219
UNR1218/121L
Forward current UNR1211
transfer ratio UNR1212/121E
UNR1213/1214
hFE
VCE = 10 V, IC = 5 mA
35
60
80
UNR1210 */1215 */1216 */
1217 *
160
460
UNR1219/121D/121F
UNR1218/121K/121L
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR1213/121K
30
20
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
0.2
V
V
V
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
UNR121D
UNR121E
Transition frequency
Input resistance UNR1211/1214/1215/121K
UNR1212/1217
fT
80
10
MHz
R1
−30%
+30%
kΩ
22
UNR1210/1213/121D/121E
UNR1216/121F/121L
UNR1218
47
4.7
0.51
1
UNR1219
Resistance ratio UNR1211/1212/1213/121L R1/R2
0.8
1.0
0.21
0.1
4.7
2.14
0.47
2.13
1.2
UNR1214
0.17
0.08
0.25
0.12
UNR1218/1219
UNR121D
UNR121E
UNR121F
UNR121K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification (UNR1110/1115/1116/1117)
*
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
SJH00003BED
2
UNR121x Series
Common characteristics chart
PT Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR1210
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
60
100
10
IB = 1.0 mA
Ta = 25°C
IC / IB = 10
VCE = 10 V
0.9 mA
0.8 mA
50
40
Ta = 75°C
25°C
0.4 mA
0.5 mA
30
20
10
0
0.3 mA
1
0.6 mA
0.7 mA
Ta = 75°C
−25°C
0.1 mA
25°C
0.1
0.01
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
(
)
Collector current IC mA
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = 5 V
Ta = 25°C
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
3
UNR121x Series
Characteristics charts of UNR1211
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
300
200
100
0
IC / IB = 10
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
VCE = 10 V
Ta = 75°C
0.7 mA
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
1
25°C
25°C
0.2 mA
Ta = 75°C
−25°C
40
0.1
0.01
−25˚C
0.1 mA
10 12
0
0
2
4
6
8
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
100
10
6
5
4
3
2
1
0
104
103
102
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
Characteristics charts of UNR1212
IC VCE
VCE(sat) IC
hFE IC
100
10
160
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
120
80
40
0
300
200
100
0
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
1
0.3 mA
0.2 mA
25°C
25°C
Ta = 75°C
−25°C
0.1
0.01
−25°C
0.1 mA
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
SJH00003BED
4
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR1213
IC VCE
VCE(sat) IC
hFE IC
160
400
300
200
100
0
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
120
0.6 mA
0.5 mA
0.4 mA
−25°C
80
1
0.3 mA
Ta = 75°C
25°C
0.2 mA
40
0.1
0.01
−25°C
0.1 mA
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00003BED
5
UNR121x Series
Characteristics charts of UNR1214
IC VCE
VCE(sat) IC
hFE IC
160
400
300
200
100
0
100
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
1
25°C
Ta = 75°C
−25°C
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1215
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
120
300
200
100
0
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
80
1
25°C
0.3 mA
Ta = 75°C
−25°C
25°C
0.2 mA
0.1 mA
0.1
0.01
40
−25°C
0
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
6
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1216
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
160
100
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
Ta = 75°C
25°C
0.9 mA
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
80
1
0.3 mA
Ta = 75°C
0.2 mA
25°C
40
0.1
0.1 mA
−25°C
0
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
7
UNR121x Series
Characteristics charts of UNR1217
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
100
10
120
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
1
60
Ta = 75°C
Ta = 75°C
25°C
40
25°C
−25°C
0.1
0.01
20
0.1 mA
10
−25°C
0
0.1
1
10
100
1
10
100
1000
0
2
4
6
8
12
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current I (mA)
O
Collector-base voltage VCB (V)
Input voltage VIN (V)
Characteristics charts of UNR1218
IC VCE
VCE(sat) IC
hFE IC
160
240
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
120
80
40
0
IB = 1.0 mA
0.9 mA
160
120
80
40
0
0.8 mA
0.7 mA
Ta = 75°C
1
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
25°C
−25°C
25°C
0.1
0.01
0.3 mA
0.2 mA
0.1 mA
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
8
UNR121x Series
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1219
IC VCE
VCE(sat) IC
hFE IC
100
10
160
120
80
40
0
240
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
0.8 mA
160
0.7 mA
0.6 mA
Ta = 75°C
120
1
25°C
Ta = 75°C
−25°C
0.5 mA
0.4 mA
80
25°C
0.3 mA
0.1
0.01
40
0
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
V
= 0.2 V
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
TaO= 25°C
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00003BED
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UNR121x Series
Characteristics charts of UNR121D
IC VCE
VCE(sat) IC
hFE IC
100
10
30
160
120
80
40
0
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
25°C
25
20
15
10
5
−25°C
IB = 1.0 mA
1
0.2 mA
0.1 mA
Ta = 75°C
25°C
0.1
0.01
−25°C
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121E
IC VCE
VCE(sat) IC
hFE IC
100
10
60
160
IB = 1.0 mA
0.7 mA
IC / IB = 10
Ta = 25°C
0.9 mA
0.6 mA
VCE = 10 V
0.8 mA
50
Ta = 75°C
120
80
40
0
40
25°C
−25°C
0.2 mA
0.3 mA
0.4 mA
30
1
0.5 mA
Ta = 75°C
0.1 mA
20
25°C
0.1
0.01
10
0
−25°C
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00003BED
10
UNR121x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR121F
IC VCE
VCE(sat) IC
hFE IC
240
100
10
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
IB = 1.0 mA
25°C
−25°C
0.5 mA
0.4 mA
0.3 mA
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
= 25°C
f = 1 MHz
IE = 0
Ta = 25°C
T
a
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00003BED
11
UNR121x Series
Characteristics charts of UNR121K
IC VCE
VCE(sat) IC
hFE IC
100
10
240
200
160
120
80
240
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
1
120
1.0 mA
0.8 mA
Ta = 75°C
−25°C
80
25°C
0.6 mA
−25°C
0.1
0.01
0.4 mA
0.2 mA
10 12
40
40
0
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
VIN IO
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1
10
100
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR121L
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
240
100
VCE = 10 V
IC / IB = 10
Ta = 25°C
200
10
1
Ta = 75°C
25°C
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
−25°C
Ta = 75°C
25°C
80
40
0
0.4 mA
0.2 mA
0.1
0.01
40
−25°C
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00003BED
12
UNR121x Series
Cob VCB
VIN IO
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
SJH00003BED
13
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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