UNR311T [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN;
| 型号： | UNR311T |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR3113, UNR311A, UNR311T
Silicon PNP epitaxial planar transistor
Unit: mm
+0.05
+0.05
0.33
0.10
–0.02
For digital circuits
–0.02
3
■ Features
• Optimum for downsizing of the equipment and high-density mount-
ing
+0.05
–0.02
1
2
0.23
(0.40)(0.40)
• Contribute for low power consumption
0.80 0.05
1.20 0.05
5˚
■ Resistance by Part Number
Marking symbol (R1)
(R2)
• UNR3113
• UNR311A
• UNR311T
6C
6X
EY
47 kΩ
100 kΩ
22 kΩ
47 kΩ
100 kΩ
47 kΩ
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
■ Absolute Maximum Ratings Ta = 25°C
Internal Connection
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Symbol
VCBO
VCEO
IC
Rating
−50
Unit
V
R1
B
C
E
−50
V
R2
−100
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature
PT
100
Tj
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Symbol
VCBO
VCEO
ICBO
Conditions
Min
−50
−50
Typ
Max
Unit
V
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
V
− 0.1
− 0.5
− 0.1
− 0.2
µA
ICEO
UNR3113, 311A
IEBO
mA
Emitter cutoff
current
UNR311T
UNR3113, 311A
UNR311T
hFE
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
80
80
Forward current
transfer ratio
400
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage UNR3113
UNR311A
VCE(sat)
VOH
− 0.25
V
V
V
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCC = −5 V, VB = −5.0 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VOL
− 0.2
UNR311T
Publication date: May 2002
SJH00041CED
1
UNR3113, UNR311A, UNR311T
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Input resistance UNR3113
UNR311A
Symbol
Conditions
Min
Typ
47
Max
Unit
R1
−30%
+30%
kΩ
100
22
UNR311T
Resistance ratio UNR3113
UNR311A
R1 / R2
0.8
1.0
1.0
0.47
80
1.2
UNR311T
0.37
0.57
Gain bandwidth product
fT
VCB
=
−
10 V, IE = 1 mA, f = 200 MHz
MHz
Common characteristics chart
PT Ta
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140
(
)
Ambient temperature Ta °C
SJH00041CED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without no-
tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY
相关型号：
UNR31A1G
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
PANASONIC
UNR31A2G
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
PANASONIC
UNR31A4G
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
PANASONIC
UNR31A6G
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明