UNR31AL [PANASONIC]

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F1, 3 PIN;


型号：	UNR31AL
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F1, 3 PIN 开关光电二极管晶体管
文件：	总3页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Transistors with built-in Resistor

UNR31AL

Silicon PNP epitaxial planar type

Unit: mm

+0.05

–0.02

+0.05

For digital circuits

0.33

0.10

–0.02

■ Features

• Suitable for high-density mounting downsizing of the equipment

• Contribute to low power consumption

+0.05

0.23

–0.02

(0.40)(0.40)

0.80 ^0.05

1.20 0.05

■ Absolute Maximum Ratings T_a= 25°C

5°

Parameter

Symbol

Rating

−50

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

T_j

−80

°C

1: Base

2: Emitter

3: Collector

Total power dissipation

Junction temperature

Storage temperature

100

125

SSSMini3-F1 Package

T_stg

−55 to +125

°C

Marking Symbol: ED

Internal Connection

R₁(4.7 kΩ)

R₂

(4.7 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

−2.0

µA



I_CEO

I_EBO

h_FE

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

−4.9

Output voltage low-level

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

+30%

1.2

Input resistance

−30%

4.7

1.0

kΩ



Resistance ratio

R₁/ R₂

f_T

0.8

Transition frequency

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: October 2004

SJH00099AED

UNR31AL

P_T T_a

I_C V_CE

V_CE(sat) I_C

120

100

−140

−120

−100

−80

−60

−40

−20

−10

T_a= 25°C

I_B= −1.0 mA

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

−1

− 0.4 mA

− 0.3 mA

T_a= 85°C

−25°C

I_C/ I_B= 30

−100 −1000

− 0.2 mA

25°C

− 0.1

120

−2

−4

−6

−8

−10 −12

−1

−10

(

)

(

)

Collector current I_CmA

Ambient temperature T_a°C

(

)

Collector-emitter voltage V_CE

h_FE I_C

C_ob V_CB

I_O V_IN

−100

−10

180

160

140

120

100

V_O= −5 V

T_a= 25°C

f = 1 MHz

T_a= 25°C

V_CE= −10 V

T_a= 85°C

−1

25°C

−25°C

− 0.1

− 0.01

−2.5

− 0.5

−1

−1.5

−2

−10

−20

−30

−40

− 0.1

−1

−10

−100

−1000

(

)

Collector current I_CmA

(

)

Input voltage V_IN

Collector-base voltage V_CB(V)

V_IN I_O

−100

−10

−1

V_O= − 0.2 V

T_a= 25°C

− 0.1

−1

−10

−100

(

)

Output current I_OmA

SJH00099AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

相关型号：

UNR31ALG

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN