UNR32A4 [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | UNR32A4 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR32A4
Silicon NPN epitaxial planar type
Unit: mm
+0.05
–0.02
+0.05
0.33
0.10
–0.02
For digital circuits
3
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
+0.05
1
2
0.23
–0.02
(0.40)(0.40)
0.80 0.05
1.20 0.05
5°
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
Tj
80
mA
mW
°C
1: Base
2: Emitter
3: Collector
Total power dissipation
Junction temperature
Storage temperature
100
125
SSSMini3-F1 Package
Tstg
−55 to +125
°C
Marking Symbol: FP
Internal Connection
R1 (10 kΩ)
B
C
E
R2
(47 kΩ)
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
50
V
0.1
0.5
0.2
µA
µA
mA
ICEO
IEBO
hFE
80
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
VOH
VOL
R1
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low-level
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
+30%
0.25
V
Input resistance
−30%
10
kΩ
Resistance ratio
R1 / R2
fT
0.17
0.21
150
Transition frequency
VCB = 10 V, IE = −2 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2003
SJH00063BED
1
UNR32A4
PT Ta
IC VCE
VCE(sat) IC
120
100
80
60
40
20
0
10
Ta = 25°C 0.9 mA
IB = 1.0 mA
80
60
40
20
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
1
0.2 mA
0.1 mA
Ta = 85°C
0.1
0.01
−25°C
25°C
IC / IB = 10
10 100
0
40
80
120
0
2
4
6
8
10
12
0.1
1
(
)
Ambient temperature Ta °C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
hFE IC
Cob VCB
IO VIN
4
3
2
1
0
300
250
200
150
100
50
100
10
1
f = 1 MHz
Ta = 25°C
VO = 5 V
Ta = 25°C
VCE = 10 V
Ta = 85°C
25°C
−25°C
0
0.1
0
10
20
30
40
1
10
100
0
1
2
Collector-base voltage VCB (V)
(
)
( )
Input voltage VIN V
Collector current IC mA
VIN IO
10
VO = 0.2 V
Ta = 25°C
1
0.1
0.1
1
10
100
(
)
Output current IO mA
SJH00063BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household
appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are re-
quired, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications
satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating,
the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be
liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as
redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physi-
cal injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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