UNR5114 [PANASONIC]

Silicon PNP epitaxial planar type; PNP硅外延平面型
UNR5114
型号: UNR5114
厂家: PANASONIC    PANASONIC
描述:

Silicon PNP epitaxial planar type
PNP硅外延平面型

文件: 总17页 (文件大小:436K)
中文:  中文翻译
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Transistors with built-in Resistor  
UNR511x Series (UN511x Series)  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
+0.10  
+0.1  
0.15  
0.3  
–0.0  
–0.05  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
S-Mini type package, allowing automatic insertion through the tape/  
1
2
magazine packing  
(0.65)  
(0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5110 (UN5110)  
UNR5111 (UN5111)  
UNR5112 (UN5112)  
UNR5113 (UN5113)  
UNR5114 (UN5114)  
UNR5115 (UN5115)  
UNR5116 (UN5116)  
UNR5117 (UN5117)  
UNR5118 (UN5118)  
UNR5119 (UN5119)  
UNR511D (UN511D)  
UNR511E (UN511E)  
UNR511F (UN511F)  
UNR511H (UN511H)  
UNR511L (UN511L)  
UNR511M (UN511M)  
UNR511N (UN511N)  
UNR511T (UN511T)  
UNR511V (UN511V)  
UNR511Z (UN511Z)  
6L  
6A  
6B  
6C  
6D  
6E  
6F  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
6H  
6I  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
6K  
6M  
6N  
6O  
6P  
6Q  
EI  
EW  
EY  
FC  
FE  
R2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
150  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00022BED  
1
UNR511x Series  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
IC = −10 µA, IE = 0  
Min  
50  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
IC = −2 mA, IB = 0  
VCB = −50 V, IE = 0  
VCE = −50 V, IB = 0  
VEB = −6 V, IC = 0  
V
0.1  
0.5  
0.01  
0.1  
0.2  
µA  
µA  
mA  
ICEO  
Emitter-base UNR5110/5115/5116/5117 IEBO  
cutoff current UNR5113  
(Collector open) UNR5112/5114/511D/  
511E/511M/511N/511T  
UNR511Z  
0.4  
0.5  
1.0  
1.5  
2.0  
20  
UNR5111  
UNR511F/511H  
UNR5119  
UNR5118/511L/511V  
Forward current UNR511V  
hFE  
VCE = 10 V, IC = 5 mA  
6
20  
30  
35  
60  
60  
80  
80  
160  
transfer ratio UNR5118/511L  
UNR5119/511D/511F/511H  
UNR5111  
UNR5112/511E  
UNR511Z  
200  
UNR5113/5114/511M  
UNR511N/511T  
UNR5110*/5115*/5116*/5117*  
Collector-emitter saturation voltage  
UNR511V  
400  
460  
VCE(sat) IC = −10 mA, IB = − 0.3 mA  
IC = −10 mA, IB = −1.5 mA  
0.25  
V
Output voltage high-level  
Output voltage low-level  
UNR5113  
VOH  
VOL  
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ  
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ  
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ  
VCC = −5 V, VB = −10 V, RL = 1 kΩ  
VCC = −5 V, VB = −6 V, RL = 1 kΩ  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
VCB = −10 V, IE = 2 mA, f = 200 MHz  
4.9  
V
V
0.2  
UNR511D  
UNR511E  
Transition frequency  
UNR5116  
fT  
80  
MHz  
150  
Input  
UNR5118  
R1  
30% 0.51 +30%  
kΩ  
resistance  
UNR5119  
1.0  
2.2  
4.7  
UNR511H/511M/511V  
UNR5116/511F/511L  
511N/511Z  
UNR5111/5114/5115  
UNR5112/5117/511T  
UNR5110/5113/511D/511E  
UNR511M  
10  
22  
47  
Resistance  
ratio  
R1/R2  
0.047  
0.1  
UNR511N  
UNR5118/5119  
UNR511Z  
0.08  
0.10  
0.21  
0.12  
SJH00022BED  
2
UNR511x Series  
Electrical Characteristics (continued) Ta = 25°C 3°C  
Parameter  
UNR5114  
Symbol  
Conditions  
Min  
0.17  
0.17  
Typ  
0.21  
0.22  
0.47  
0.47  
1.0  
Max  
0.25  
0.27  
Unit  
Resistance  
ratio  
UNR511H  
UNR511T  
UNR511F  
0.37  
0.57  
UNR511V  
UNR5111/5112/5113/511L  
UNR511E  
0.8  
1.70  
3.7  
1.0  
1.2  
2.60  
5.7  
2.14  
4.7  
UNR511D  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
No-rank  
hFE  
160 to 260  
210 to 340  
290 to 460  
160 to 460  
Common characteristics chart  
PT Ta  
250  
200  
150  
100  
50  
0
0
40  
80  
120  
160  
(
)
Ambient temperature Ta °C  
Characteristics charts of UNR5110  
IC VCE  
VCE(sat) IC  
hFE IC  
120  
100  
10  
1  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = –10 V  
IB = −1.0 mA  
0.9 mA  
100  
80  
60  
40  
20  
0
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
0.3mA  
Ta = 75°C  
25°C  
Ta = 75°C  
0.2mA  
0.1mA  
25°C  
25°C  
0.1  
25°C  
0.01  
0.1  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1  
10  
)
Collector current IC mA  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
(
)
(
Collector current IC mA  
SJH00022BED  
3
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
f = 1 MHz  
IE = 0  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
a = 25°C  
T
Ta = 25°C  
5
4
3
2
1
0
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
0.1  
1  
10  
100  
Collector-base voltage VCB (V)  
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR5111  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
120  
80  
100  
10  
1  
160  
IC / IB = 10  
Ta = 75°C  
25°C  
VCE = −10 V  
Ta = 25°C  
IB = −1.0 mA  
0.9 mA  
120  
0.8 mA  
25°C  
0.7 mA  
0.6 mA  
0.5 mA  
80  
40  
0
0.4 mA  
Ta = 75°C  
25°C  
0.3 mA  
0.2 mA  
40  
0.1  
25°C  
0.1 mA  
0
1  
0.01  
0.1  
10  
100  
1000  
1  
10  
100  
0
2  
4  
6  
8  
10 12  
(
)
Collector current IC mA  
(
)
Collector current IC mA  
(
)
V
Collector-emitter voltage VCE  
Cob VCB  
IO VIN  
VIN IO  
100  
10  
104  
103  
102  
10  
1  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
VO = −5 V  
Ta = 25°C  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
(
)
Output current IO mA  
Collector-base voltage VCB (V)  
(
)
V
Input voltage VIN  
SJH00022BED  
4
UNR511x Series  
Characteristics charts of UNR5112  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
1  
160  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
IB = −1.0mA  
0.9mA  
0.8mA  
120  
80  
40  
0
0.7mA  
0.6mA  
0.5mA  
0.4mA  
Ta = 75°C  
25°C  
0.3mA  
0.2mA  
Ta = 75°C  
25°C  
25°C  
0.1  
25°C  
0.1mA  
0.01  
0.1  
1  
10  
100  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
(
)
Collector current IC mA  
(
)
V
(
)
Collector-emitter voltage VCE  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
6
5
4
3
2
1
0
100  
10  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
VO = 5 V  
Ta = 25°C  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
(
)
Output current IO mA  
(
)
V
Input voltage VIN  
Characteristics charts of UNR5113  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
10  
1  
400  
300  
200  
100  
0
IC / IB = 10  
IB = −1.0 mA  
0.9 mA  
Ta = 25°C  
VCE = −10 V  
Ta = 75°C  
25°C  
0.8 mA  
0.7 mA  
0.6 mA  
120  
80  
40  
0
0.5 mA  
0.4 mA  
25°C  
0.3 mA  
0.2 mA  
Ta = 75°C  
25°C  
0.1  
25°C  
0.1 mA  
0.01  
0.1  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1  
10  
)
Collector current IC mA  
100  
1000  
(
)
Collector-emitter voltage VCE  
V
(
)
(
Collector current IC mA  
SJH00022BED  
5
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
VO = − 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
(
)
Output current IO mA  
(
)
Collector-base voltage VCB (V)  
Input voltage VIN  
V
Characteristics charts of UNR5114  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
1  
160  
400  
300  
200  
100  
0
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
120  
0.7 mA  
0.6 mA  
Ta = 75°C  
0.5 mA  
80  
40  
0
0.4 mA  
0.3 mA  
0.2 mA  
25°C  
Ta = 75°C  
25°C  
25°C  
0.1  
0.1 mA  
25°C  
0.01  
0.1  
1  
10  
100  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
(
)
(
)
Collector current IC mA  
(
)
Collector-emitter voltage VCE  
V
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
6
5
4
3
2
1
0
1000  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
(
)
V
Input voltage VIN  
(
)
Collector-base voltage VCB (V)  
Output current IO mA  
SJH00022BED  
6
UNR511x Series  
Characteristics charts of UNR5115  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
10  
1  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
120  
0.6 mA  
0.5 mA  
Ta = 75°C  
0.4 mA  
80  
25°C  
0.3 mA  
0.2 mA  
Ta = 75°C  
25°C  
25°C  
40  
0.1  
0.1 mA  
25°C  
0
0.01  
0.1  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1  
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
6
5
4
3
2
1
0
100  
10  
V
O
= − 0.2 V  
VO = −5 V  
Ta = 25˚C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
(
)
(
)
Collector-base voltage VCB (V)  
Output current IO mA  
Input voltage VIN  
V
Characteristics charts of UNR5116  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
160  
100  
10  
1  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
120  
0.7 mA  
Ta = 75°C  
0.6 mA  
0.5 mA  
80  
0.4 mA  
25°C  
0.3 mA  
Ta = 75°C  
25°C  
25°C  
0.2 mA  
40  
0.1  
0.1 mA  
25°C  
1  
0
0.01  
0.1  
1  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
10  
100  
(
)
(
)
V
(
)
Collector current IC mA  
Collector-emitter voltage VCE  
Collector current IC mA  
SJH00022BED  
7
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
VO = 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
(
)
Output current IO mA  
Collector-base voltage VCB (V)  
(
)
V
Input voltage VIN  
Characteristics charts of UNR5117  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
1  
120  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
IB = −1.0 mA  
100  
80  
60  
40  
20  
0
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
Ta = 75°C  
T
= 75°C  
a
0.3 mA  
0.2 mA  
25°C  
25°C  
0.1  
25°C  
25°C  
0.1 mA  
0.01  
0.1  
1  
10  
100  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
(
)
(
)
V
Collector current IC mA  
(
)
Collector-emitter voltage VCE  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
6
5
4
3
2
1
0
100  
10  
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
(
)
V
Input voltage VIN  
(
)
Collector-base voltage VCB (V)  
Output current IO mA  
SJH00022BED  
8
UNR511x Series  
Characteristics charts of UNR5118  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
100  
10  
1  
160  
120  
80  
40  
0
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
200  
IB = 1.0 mA  
0.9 mA  
160  
0.8 mA  
0.7 mA  
Ta = 75°C  
25°C  
120  
Ta = 75°C  
0.6 mA  
25°C  
0.5 mA  
0.4 mA  
0.3 mA  
0.2 mA  
80  
40  
0
25°C  
0.1  
25°C  
0.1 mA  
0.01  
0.1  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1  
10  
100  
1000  
(
)
(
)
Collector-emitter voltage VCE  
V
Collector current IC mA  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
5
4
3
2
1
0
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
Collector-base voltage VCB (V)  
Characteristics charts of UNR5119  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
160  
120  
80  
100  
10  
1  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
200  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
160  
Ta = 75°C  
0.7 mA  
120  
Ta = 75°C  
25°C  
25°C  
80  
40  
0
0.6 mA  
0.5 mA  
25°C  
40  
0.1  
0.4 mA  
0.3 mA  
0.2 mA  
0.1 mA  
10 12  
25°C  
0
1  
0.01  
0.1  
0
2  
4  
6  
8  
10  
)
Collector current IC mA  
100  
1000  
1  
10  
100  
(
)
V
(
Collector-emitter voltage VCE  
(
)
Collector current IC mA  
SJH00022BED  
9
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
VO = −0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
E = 0  
Ta = 25°C  
I
5
4
3
2
1
0
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
(
)
Output current IO mA  
( )  
Input voltage VIN V  
Collector-base voltage VCB (V)  
Characteristics charts of UNR511D  
IC VCE  
VCE(sat) IC  
hFE IC  
60  
100  
160  
120  
80  
IC / IB = 10  
IB = − 1.0 mA  
0.9 mA  
Ta = 25˚C  
VCE = 10 V  
Ta = 75°C  
0.8 mA  
50  
40  
30  
20  
10  
0
10  
25°C  
0.3 mA  
0.2 mA  
25°C  
1  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
Ta = 75°C  
25°C  
0.1  
40  
0.1 mA  
25°C  
0.01  
0.1  
0
1  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
10  
100  
1000  
(
)
Collector-emitter voltage VCE  
V
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
5
4
3
2
1
0
VO = − 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
(
)
( )  
Input voltage VIN V  
Output current IO mA  
Collector-base voltage VCB (V)  
SJH00022BED  
10  
UNR511x Series  
Characteristics charts of UNR511E  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
400  
300  
200  
100  
0
60  
IC / IB = 10  
IB = 1.0 mA  
0.9 mA  
Ta = 25°C  
VCE = −10 V  
0.8 mA 0.7 mA  
50  
40  
30  
20  
10  
0
0.3 mA  
0.2 mA  
1  
Ta = 75°C  
0.6 mA  
0.5 mA  
0.4 mA  
Ta = 75°C  
25°C  
0.1 mA  
0.1  
25°C  
25°C  
25°C  
0.01  
0.1  
1  
10  
100  
1  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
(
)
Collector current IC mA  
(
)
(
)
V
Collector current IC mA  
Collector-emitter voltage VCE  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
6
5
4
3
2
1
0
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
(
)
(
)
Input voltage VIN  
V
Collector-base voltage VCB (V)  
Output current IO mA  
Characteristics charts of UNR511F  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
160  
120  
80  
100  
10  
1  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
Ta = 75°C  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
200  
160  
120  
80  
40  
0
25°C  
25°C  
Ta = 75°C  
0.5 mA  
25°C  
0.4 mA  
0.3 mA  
0.2 mA  
40  
0.1  
25°C  
0.1 mA  
10 12  
0
1  
0.01  
0.1  
0
2  
4  
6  
8  
10  
100  
1000  
1  
10  
100  
(
)
V
Collector-emitter voltage VCE  
(
)
Collector current IC mA  
(
)
Collector current IC mA  
SJH00022BED  
11  
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
6
104  
103  
102  
10  
1  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1.0  
1.2  
1.4  
0.1  
1  
10  
100  
(
)
(
)
Collector-base voltage VCB (V)  
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR511H  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
120  
240  
200  
160  
120  
80  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
100  
80  
60  
40  
20  
0
IB = 0.5 mA  
0.4 mA  
Ta = 75°C  
25°C  
1  
Ta = 75°C  
25°C  
0.3 mA  
25°C  
0.2 mA  
0.1 mA  
0.1  
0.01  
40  
25°C  
0
0.1  
1  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
(
)
(
)
(
)
Collector current IC mA  
Collector-emitter voltage VCE  
V
Collector current IC mA  
Cob VCB  
VIN IO  
6
5
4
3
2
1
0
100  
10  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
1  
10  
100  
0.1  
1  
10  
100  
Collector-base voltage VCB (V)  
(
)
Output current IO mA  
SJH00022BED  
12  
UNR511x Series  
Characteristics charts of UNR511L  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
100  
10  
240  
200  
160  
120  
80  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
200  
160  
IB = 1.0 mA  
120  
1  
Ta = 75°C  
0.8 mA  
Ta = 75°C  
25°C  
80  
40  
0
0.6 mA  
25°C  
25°C  
0.1  
0.4 mA  
0.2 mA  
–10 –12  
25°C  
40  
0.01  
0
1  
0
–2  
–4  
–6  
–8  
1  
10  
100  
1000  
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob VCB  
VIN IO  
100  
10  
6
5
4
3
2
1
0
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
1  
10  
100  
(
)
Output current IO mA  
Collector-base voltage VCB (V)  
Characteristics charts of UNR511M  
IC VCE  
VCE(sat) IC  
hFE IC  
500  
400  
300  
200  
100  
0
240  
10  
1  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
200  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
160  
0.6 mA  
Ta = 75°C  
25°C  
120  
0.1  
0.01  
0.001  
Ta = 75°C  
25°C  
25°C  
0.5 mA  
0.4 mA  
0.3 mA  
80  
25°C  
40  
0.2 mA  
0.1 mA  
0
1  
10  
100  
1000  
1  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
(
)
V
(
)
Collector-emitter voltage VCE  
Collector current IC mA  
(
)
Collector current IC mA  
SJH00022BED  
13  
UNR511x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
101  
1
10  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
8
6
4
2
0
1  
0.1  
0.01  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1  
1  
10  
100  
0.1  
1  
10  
100  
( )  
Input voltage VIN V  
Collector-base voltage VCB (V)  
(
)
Output current IO mA  
Characteristics charts of UNR511N  
IC VCE  
VCE(sat) IC  
hFE IC  
200  
10  
300  
250  
200  
150  
100  
50  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
IB = 1.0 mA  
150  
100  
50  
0
Ta = 75°C  
1  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
25°C  
25°C  
Ta = 75°C  
25°C  
0.1  
0.3 mA  
0.2 mA  
25°C  
0.1 mA  
0.01  
0
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
1  
10  
100  
1 000  
(
)
V
Collector-emitter voltage VCE  
(
)
Collector current IC mA  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
–10  
–1  
6
5
4
3
2
1
0
100  
10  
f = 1 MHz  
IE = 0  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
Ta = 25°C  
1  
0.1  
0.01  
–1  
–10  
–100  
0.1  
1  
10  
100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
( )  
V
Input voltage VIN  
(
)
Output current IO mA  
SJH00022BED  
14  
UNR511x Series  
Characteristics charts of UNR511T  
IC VCE  
VCE(sat) IC  
hFE IC  
300  
250  
200  
150  
100  
50  
200  
10  
1  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
Ta = 75°C  
150  
IB = −1.0 mA  
– 0.9 mA  
– 0.8 mA  
– 0.7 mA  
– 0.6 mA  
– 0.5 mA  
0.4 mA  
25°C  
100  
Ta = 75°C  
25°C  
25°C  
0.1  
50  
0.3 mA  
0.2 mA  
0.1 mA  
25°C  
0
1  
0
0.01  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
IO VIN  
VIN IO  
104  
103  
102  
10  
1  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
1  
0.1  
0.01  
0.1  
1  
10  
100  
0.4 0.6 0.8  
1  
1.2  
1.4  
(
)
(
)
Output current IO mA  
Input voltage VIN  
V
Characteristics charts of UNR511V  
IC VCE  
VCE(sat) IC  
hFE IC  
12  
10  
12  
10  
8
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
IB = 1.0 mA  
Ta = 75°C  
10  
0.9 mA  
25°C  
0.8 mA  
1  
8  
0.7 mA  
Ta = 75°C  
25°C  
0.6 mA  
6  
4  
2  
0
6
25°C  
0.5 mA  
0.4 mA  
0.1  
4
25°C  
0.3 mA  
0.2 mA  
2
0.1 mA  
0.01  
0
0
2  
4  
6  
8  
10 12  
1  
10  
100  
1000  
1  
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
SJH00022BED  
15  
UNR511x Series  
IO VIN  
VIN IO  
104  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
103  
102  
10  
1  
0.1  
0.01  
1  
0.1  
1  
10  
100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
V
Input voltage VIN  
(
)
Output current IO mA  
Characteristics charts of UNR511Z  
IC VCE  
VCE(sat) IC  
hFE IC  
10  
1  
300  
250  
200  
150  
100  
50  
200  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
150  
IB = 1.0 mA  
Ta = 75°C  
25°C  
0.9 mA  
25°C  
0.8 mA  
100  
0.7 mA  
Ta = 75°C  
25°C  
0.6 mA  
0.5 mA  
0.1  
25°C  
0.4 mA  
50  
0.3 mA  
0.2 mA  
0.1 mA  
0.01  
0
1  
0
1  
10  
100  
1000  
10  
100  
1000  
0
2  
4  
6  
8  
10 12  
(
)
(
)
Collector-emitter voltage VCE  
V
(
)
Collector current IC mA  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
–1  
100  
10  
6
5
4
3
2
1
0
VO = 5 V  
Ta = 25°C  
VO  
0.2 V  
Ta = 25°C  
=
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.4 0.6 0.8  
1  
1.2  
1.4  
0.1  
1  
10  
100  
1  
10  
100  
(
)
V
Input voltage VIN  
(
)
Output current IO mA  
Collector-base voltage VCB (V)  
SJH00022BED  
16  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
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therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
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physical injury, fire, social damages, for example, by using the products.  
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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ETC

UNR5115S

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN

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PANASONIC