UNR51A9G
更新时间：2024-09-18 17:10:50
品牌：PANASONIC
描述：Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
概述
规格参数
数据手册UNR51A9G 概述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 小信号双极晶体管
UNR51A9G 规格参数
| 生命周期： | Obsolete | 包装说明： | SMALL OUTLINE, R-PDSO-F3 |
| 针数： | 3 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.21.00.95 |
| 风险等级： | 5.84 | 其他特性： | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| 最大集电极电流 (IC)： | 0.08 A | 集电极-发射极最大电压： | 50 V |
| 配置： | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE)： | 30 |
| JESD-30 代码： | R-PDSO-F3 | 元件数量： | 1 |
| 端子数量： | 3 | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 极性/信道类型： | PNP | 认证状态： | Not Qualified |
| 表面贴装： | YES | 端子形式： | FLAT |
| 端子位置： | DUAL | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 80 MHz |
| Base Number Matches： | 1 |
UNR51A9G 数据手册
通过下载UNR51A9G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR51A9G
Silicon PNP epitaxial planar type
For digital circuits
Features
Package
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
ꢀCode
SMini3-F2
ꢀPin Name
1: Base
SMini type package allowing easy automatic insertion through tape packing
2: mitter
ctor
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
I
Ratin
–0
Unit
V
Marking Symbol: DC
ꢀInternal Connection
V
mA
mW
°C
R1 (1 kΩ)
Total power dissipation
PT
150
C
E
B
Junction temperature
Tj
150
R2
(10 kΩ)
Storage temperature
T
g
–55 to +150
°C
Electrical Charristics Ta = 2°C±3°
Parameter
Symbol
Conditions
Min
-50
-50
Typ
Max
Unit
V
Collecor-base voltagEmitteopen)
Collector-emitte open)
Collector-base cutofmitter open)
Collector-emitter cutoff crent (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
VCBO IC = -10 mA, IE = 0
VCEO IC = -2 mA, IB = 0
V
ICBO
ICEO
IEBO
hFE
VCB = -50 V, IE = 0
VCE = -50 V, IB = 0
VEB = -6 V, IC = 0
- 0.1
- 0.5
-1.5
mA
mA
mA
VCE = -10 V, IC = -5 mA
30
V
VCE(sat) IC = -10 mA, IB = - 0.3 mA
- 0.25
VOH
VOL
R1
VCC = -5 V, VB = - 0.5 V, RL = 1 kW
VCC = -5 V, VB = -2.5 V, RL = 1 kW
V
-4.9
Output voltage low-level
V
- 0.2
+30%
0.12
Input resistance
1
kW
-30%
Resistance ratio
R1 / R2
fT
0.08
0.1
80
Transition frequency
VCB = -10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2008
SJH00271AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR51A9G
PT T
IC VCE
VCE(sat) IC
a
−10
200
150
IC / IB = 10
Ta = 25°C
IB = −1.0 mA
−120
−80
−40
0
− 0.9 mA
− 0.8 mA
− 0.7 mA
−1
−10−1
−10−2
− 0.6 mA
− 0.5 mA
100
50
− 0.4 mA
− 0.3 mA
Ta = 85°C
−25°C
− 0.2 m
− 0.1 mA
25°C
0
0
−1
−10
−102
40
80
120
160
0
−4
−
−12
Collector current IC (mA)
Colletor-emitter voltage VCE (V)
Ambient temperature Ta (°C)
hFE IC
Cob VCB
IO VIN
200
−10
−1
VO = −5 V
Ta = 25°C
VCE = −10 V
f = 1 Hz
Ta = 5°C
160
120
4
Ta = 85°C
−25C
−10−1
−10−2
−10−3
80
0
0
0
−1
−10
−102
−1
−10
−102
0
− 0.8
−1.6
Collector-base voltage VCB (V)
Input voltage VIN (V)
Collector current IC (mA)
O
−102
−10
VO = − 0.2 V
Ta = 25°C
−1
−10−1
−10−1
−1
−10
−102
Output current IO (mA)
2
SJH00271AED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR51A9G
SMini3-F2
Unit: mm
2.00 ±0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(.65)
(0.65)
1.30 ±0.10
(5°)
SJH00271AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
UNR51A9G 相关器件
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| UNR51AAG | PANASONIC | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN | 获取价格 |
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