UNR521EG [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | UNR521EG |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总18页 (文件大小：627K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR521xG Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Package
•
• Costs can be reduced through downsizing of the equipment an
reduction of the number of parts
Code
SMini3-F2
•
• S-Mini type package, allowing automatic insertion through he tape
packing and magazine packing
Pin Name
1: B
2: E
olle
■ Resistance by Part Number
Marking symbol (R1)
(R2)
■ Internal Connection
• UNR5210G
• UNR5211G
• UNR5212G
• UNR5213G
• UNR5214G
• UNR5215G
• UNR5216G
• UNR5217G
• UNR5218G
• UNR5219G
• UNR521DG
• NR521E
• UNR521
• UNR52KG
• UN521LG
• UNR521
• UNR
• UNR52
• UNR521V
• UNR521ZG
8L
8A
8B
8
8
8F
47 kΩ
10 kΩ
22 kΩ
7 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 k
0.51 kΩ
4Ω
.7 kΩ
10 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
0 kΩ
22 kΩ
47 kΩ
47 kΩ
R1
B
C
E
R2
8H
8I
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
8K
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
Tj
100
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
°C
Publication date: June 2007
SJH00218AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR5210G/5215G/5216G/5217G
cutoff current UNR5213G
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
µA
ICEO
IEBO
0.01
0.1
mA
V
(Collector
open)
UNR5212G/5214G/521DG/
521EG/521MG/521NG/521TG
0.2
UNR521ZG
0.4
0.5
1.0
1.5
2.0
20
UNR5211G
UNR521FG/521KG
UNR5219G
UNR5218G/521LG/521VG
Forward UNR521VG
hFE
VCE = 10 V, C = 5 m
6
current
transfer
ratio
UNR5218G/521KG/521
20
30
35
60
60
UNR5219G/51DG/5
UNR5211G
UNR5212G/51EG
UNR52ZG
200
UNR513G/514G/521MG
U521NG/521TG
80
80
400
460
0.25
G*/5215G*/5216G*/52G*
160
Cllectr-emier saturation voltag
UNR521VG
VE(sat)
IC = 10 mA, IB = 0.3 mA
IC = 10 mA, IB = 1.5 mA
Outpuvoltage high-lvel
Output vel
521KG
UG
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6.0 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
4.9
V
V
0.2
UNR521EG
Transition frequency
fT
150
MHz
Input
resistance UNR5219G
UNR521MG/521VG
UNR5218G
R1
−30% 0.51 +30%
kΩ
1.0
2.2
4.7
UNR5216G/521FG/521LG/
521NG/521ZG
UNR5211G/5214G/5215G/521KG
UNR5212G/5217G/521TG
UNR5210G/5213G/521DG/521EG
10
22
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260 210 to 340 290 to 460 160 to 460
SJH00218AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
0.047
0.1
Max
Unit
Resistance UNR521MG
R1/R2
ratio
UNR521NG
UNR5218G/5219G
UNR521ZG
0.08
0.17
0.37
0.10
0.21
0.21
0.47
0.47
1.0
0.12
0.25
0.57
UNR5214G
UNR521TG
UNR521FG
UNR521VG
UNR5211G/5212G/5213G/521LG
UNR521KG
.8
70
3.7
1.0
1.2
2.60
2.60
5.7
2.13
2.14
4.7
UNR521EG
UNR521DG
Note) Measuring methods are based on JAPANESE ITRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
240
200
160
120
80
40
0
0
120
160
(
)
Aure Ta °C
Characteristiccharts of UNR5210G
IC VCE
VCE(sat) IC
hFE IC
102
10
60
400
300
200
100
0
IC / IB = 10
IB = 1.0 mA
Ta = 25°C
VCE = 10 V
0.9 mA
.8 mA
50
40
Ta = 75°C
0.4 mA
0.5 mA
25°C
1
30
20
10
0
0.3 mA
0.6 mA
0.7 mA
Ta = 75°C
−25°C
0.1 mA
25°C
10−1
−25°C
10−2
10−1
1
10
102
0
2
4
6
8
10
12
1
10
102
103
(
)
(
)
V
Collector current IC mA
(
)
Collector-emitter voltage VCE
Collector current IC mA
SJH00218AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0
10 −1
1
10
102
102
0.4
0.8
1.0
1.2
(V)
1.
1
10
(m
(
)
V
Int voltage VIN
)
A
Collector-base voltage VCB
Output current IO
Characteristics charts of UNR521G
IC VCE
VCat) IC
hFE IC
102
1
400
300
200
100
160
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta =
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 m
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
25°C
25°C
Ta = 75°C
0mA
−25°C
10 −1
40
−25˚C
0.1 A
10 12
10 −2
10 −1
0
102
103
1
10
102
1
10
0
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Cltage VCE
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
a = 25°C
VO = 0.2 V
Ta = 25°C
= 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
10 −1
10
102
102
0.4
0.6
0.8
1.0
1.2
(V)
1.4
1
10
(
)
Collector-base voltage VCB
V
Input voltage VIN
(m )
Output current IO A
SJH00218AED
4
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR5212G
IC VCE
VCE(sat) IC
hFE IC
102
10
400
300
200
0
160
120
80
40
0
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.7 mA
0.6 mA
0.5 mA
0.8 mA
0.4 mA
1
0.3 mA
0.2 mA
25°C
25°
T= 75°C
−25°C
10 −1
−25°C
0.1 mA
10 −2
1
103
10
1
10
102
0
2
4
6
8
10
12
(
)
(
)
Collector current IC mA
(
)
ector current IC m
Collector-emitter voltage VCE
V
Cob VCB
IO VI
VIN IO
104
103
2
10
1
102
10
6
5
4
3
2
1
0
V= 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1
IE =
Ta =
1
10 −1
10 −2
10
10 −1
ltage VCB
10
102
0.4
0.6
0.8
1.0
1.2
(V)
1.4
1
10
102
(
)
V
Input voltage VIN
(m
)
A
Output current IO
Characteristiccharts of UNR5213G
IC VCE
VCE(sat) IC
hFE IC
102
10
400
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
300
200
100
0
120
0.6 mA
0.5 mA
0.4 mA
−25°C
1
80
0.3 mA
Ta = 75°C
25°C
0.2 mA
10 −1
40
−25°C
0.1 mA
10 −2
10 −1
0
103
1
10
102
1
10
102
0
2
4
6
8
10
12
(
)
(
)
(
)
V
Collector current IC mA
Collector current IC mA
Collector-emitter voltage VCE
SJH00218AED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0
10-1
1
10
102
1
10
102
0.4
0.8
1.0
1.2
(V)
1
Int voltage VIN
(
)
V
(m
)
A
Collector-base voltage VCB
Output current IO
Characteristics charts of UNR524G
IC VCE
VCat) IC
hFE IC
102
1
160
400
300
200
10
IC / IB = 10
Ta =
VCE = 10 V
IB = 1.0 mA
0.mA
0.8
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.mA
25°C
Ta = 75°C
−25°C
25°C
10 −1
0.2 m
0.1 m
−25°
10 −2
10 −1
102
103
1
10
102
0
10
12
1
10
(
)
Cltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
102
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
= 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
10 −1
1
10
102
1
10
102
0.4
0.6
0.8
1.0
1.2
1.4
(
)
(m )
Output current IO A
(V)
Collector-base voltage VCB
V
Input voltage VIN
SJH00218AED
6
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR5215G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
40
0
400
300
200
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
1
25°C
0.3 mA
−25°C
Ta 75°C
25°
0.2 mA
0.1 mA
10 −1
−2°C
10 −2
1
10
0
2
4
6
8
10
12
1
10
102
103
(
(
)
(
)
ector current IC mA
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
IO VI
VIN IO
102
10
104
103
10
1
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
V= 5 V
Ta = 25°C
f = 1
IE =
Ta = 2
1
10 −1
10 −2
10
102
10 −1
10
102
1
10
0.4
0.6
0.8
1.0
1.2
1.4
(V)
Input voltage VIN
(m )
A
Output current IO
(
)
ltage CB
V
Characteristiccharts of UNR5216G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
Ta = 75°C
25°C
0.9 mA
120
300
200
100
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
0.3 mA
80
40
0
1
Ta = 75°C
0.2 mA
25°C
10 −1
0.1 mA
10
−25°C
10 −2
10 −1
1
10
102
0
2
4
6
8
12
1
10
102
103
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00218AED
7
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
104
103
102
10
1
102
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0
10 −1
1
10
102
0.4
0.8
1.0
1.2
(V)
1.
1
10
102
Inpt voltage VIN
(
)
(m
)
A
Collector-base voltage VCB
V
Output current IO
Characteristics charts of UNR527G
IC VCE
VCat) IC
hFE IC
400
300
200
100
120
102
1
IC / IB = 10
Ta
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0mA
0.mA
.5 mA
80
0.4 mA
0.3 mA
0.2 A
60
Ta = 75°C
Ta = 75°C
25°C
4
25°C
−25°C
10 −1
20
0
A
10
−25°C
10 −2
10 −1
102
103
0
12
1
10
102
1
10
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Coltage VCE
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
= 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
102
10 −1
Collector-base voltage VCB
1
10
102
0.4
0.6
0.8
1.0
1.2
(V)
1.4
1
10
(m
)
A
(
)
Output current IO
V
Input voltage VIN
SJH00218AED
8
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR5218G
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
0
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
1
C
0.6 mA
0.5 mA
0.4 mA
25°C
−25°C
25C
10 −1
0.3 mA
0.2 mA
0.1 mA
40
−°C
10 −2
−1
0
10
1
10
102
103
0
2
4
6
8
10
12
(
)
Collector-emitter voltage VCE
V
(
(
)
ector current IC mA
Collector current IC mA
Cob VCB
IO VI
VIN IO
102
10
6
5
4
3
2
1
0
104
103
10
1
VO = 0.2 V
Ta = 25°C
V= 5 V
Ta = 25°C
f = 1
IE =
Ta = 2
1
10−1
10−2
10
102
10-1
10
102
0.4
0.6
0.8
1.0
1.2
(V)
1.4
1
10
(m
)
A
Output current IO
(
)
V
Input voltage VIN
ltage CB
Characteristiccharts of UNR5219G
IC VCE
VCE(sat) IC
hFE IC
102
10
240
160
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
120
80
40
0
0.9 mA
0.8 mA
160
0.7 mA
0.6 mA
Ta = 75°C
120
1
25°C
Ta = 75°C
−25°C
0.5 mA
0.4 mA
80
25°C
10 −1
0.3 mA
40
0
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
102
103
1
10
102
0
2
4
6
8
10
12
1
10
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
(
)
Collector current IC mA
SJH00218AED
9
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
102
10
104
103
102
10
1
6
5
4
3
2
1
V
= 0.2 V
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
TaO= 25°C
1
10 −1
0
102
10 −1
1
10
102
1
10
0.4
0.8
1.0
1.2
1.
(m
)
A
Output current IO
(V)
(
)
V
Inpt voltage VIN
Collector-base voltage VCB
Characteristics charts of UNR52DG
IC VCE
VCat) IC
hFE IC
102
10
160
120
80
40
30
IC / IB = 10
Ta =
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
.5 A
0.mA
mA
25°C
25
20
15
1
−25°C
IB = 1.0 mA
0.2 m
0mA
Ta = 75°C
25°C
10 −1
−25°
10 −2
10 −1
0
102
103
1
10
102
1
10
0
10
12
(
)
V
(
)
Cltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
a = 25°C
= 1 MHz
IE = 0
VO = 0.2 V
Ta = 25°C
Ta = 25°C
1
10 −1
10 −2
10 −1
10 −1
1
10
102
102
1.5
2.0
2.5
3.0
3.5
4.0
1
10
(V)
(
)
Input voltage VIN
Collector-base voltage VCB
V
(m
)
A
Output current IO
SJH00218AED
10
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR521EG
IC VCE
VCE(sat) IC
hFE IC
102
10
160
120
80
0
60
50
40
30
20
10
0
IB = 1.0 mA
IC / IB = 10
0.7 mA
Ta = 25°C
0.9 mA
0.8 mA
VCE = 10 V
Ta = 75°C
0.6 mA
25°C
−25°C
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
1
25C
10 −1
−25°C
10 −2
1
10
1
10
102
103
0
2
4
6
8
10
12
(
ector current IC mA
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
Cob VCB
IO VI
VIN IO
104
103
2
10
1
102
10
6
5
4
3
2
1
0
V= 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1
IE =
Ta =
1
10 −1
10 −2
0
10 −1
10
102
1.5
2.0
2.5
3.0
3.5
4.0
1
10
102
(
)
V
V)
ltage VCB
Input voltage VIN
(m
)
A
Output current IO
Characteristiccharts of UNR521FG
IC VCE
VCE(sat) IC
hFE IC
240
102
10
160
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
120
80
40
0
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
IB = 1.0 mA
25°C
−25°C
0.5 mA
0.4 mA
0.3 mA
25°C
10 −1
0.2 mA
0.1 mA
−25°C
10 −2
10 −1
0
2
4
6
8
10
12
1
10
102
1
10
102
103
(
)
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
Collector current IC mA
SJH00218AED
11
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
104
103
102
10
1
102
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
= 25°C
f = 1 MHz
IE = 0
T
a
Ta = 25°C
1
10 −1
0
10 −1
1
10
102
0.4
0.8
1.0
1.2
(V)
1.
1
10
102
(
)
Collector-base voltage VCB
V
Int voltage VIN
(m
)
A
Output current IO
Characteristics charts of UNR52KG
IC VCE
VCat) IC
hFE IC
102
0
240
240
200
160
120
80
IC / IB = 10
VCE = 10 V
Ta =
200
160
Ta = 75°C
25°C
IB = 1.2 mA
120
1.0 mA
0.mA
Ta = 75°C
−25°C
8
25°C
0.mA
−25°C
10 −1
0.4 mA
0.2 A
10 12
4
40
10 −2
0
0
103
1
10
102
103
0
1
10
)
Collector current IC mA
102
(
)
(
)
V
Collector current IC mA
(
Coltage VCE
Cob VCB
VIN IO
6
5
4
3
2
1
0
102
10
VO = 0.2 V
Ta = 25°C
= 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
102
1
10
102
1
10
(m
(
)
)
A
Collector-base voltage VCB
V
Output current IO
SJH00218AED
12
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR521LG
IC VCE
VCE(sat) IC
hFE IC
102
10
240
200
160
120
80
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = 10 V
Ta = 75°C
IB = 1.0 mA
25°C
0.8 mA
1
0.6 mA
−25°C
Ta = °C
25°C
0.4 mA
10 −1
40
25°C
0.2 mA
10 −2
0
0
102
0
2
4
6
8
10
12
1
10
102
103
1
0
(
)
Collector-emitter voltage VCE
V
(
)
(
)
ector current IC m
Collector current IC mA
Cob VCB
VI I
6
5
4
3
2
1
0
102
10
VO = 0.2 V
Ta = 25°C
f = 1
IE =
a = 2
1
10 −1
10 −
10 −1
1
10
102
1
10
(
102
(
)
)
A
ltage VCB
V
Output current IO
Characteristiccharts of UNR521MG
IC VCE
VCE(sat) IC
hFE IC
500
400
300
200
100
0
10
240
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
200
160
120
80
0.9 mA
0.8 mA
1
10 −1
10 −2
10 −3
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
25°C
25°C
0.5 mA
0.4 mA
0.3 mA
−25°C
−25˚C
0.2 mA
40
0.1 mA
0
102
103
1
10
102
103
1
10
Collector current IC mA
0
2
4
6
8
10
12
(
)
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
SJH00218AED
13
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
5
4
3
2
1
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0
10 −1
1
10
102
1
10
(m
102
0.4
0.8
1.0
1.2
(V)
1
(
)
V
Collector-base voltage VCB
Inpt voltage VIN
)
A
Output current IO
Characteristics charts of UNR52NG
IC VCE
VCat) IC
hFE IC
160
10
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta =
IB 1.0 mA
.9 mA
120
80
40
0
0A
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
25°C
0.3 mA
−25°C
Ta = 75C
2 mA
mA
10 −1
25°C
−25°C
10 −2
10
102
103
1
10
102
103
0
10
12
1
(
)
Cltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
= 1 MHz
IE = 0
VO = 0.2 V
Ta = 25°C
T
a
= 25°C
1
10 −1
10 −2
10 −1
102
1
10
102
0.4
0.6
0.8
1
1.2
1.4
1
10
(
)
Collector-base voltage VCB
V
(V)
Input voltage VIN
(m
)
A
Output current IO
SJH00218AED
14
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Characteristics charts of UNR521TG
IC VCE
VCE(sat) IC
hFE IC
10
160
120
80
40
0
480
400
320
240
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
0.6 mA
1
0.5 mA
0.4 mA
0.3 mA
25°C
−25°C
Ta = 75°C
10 −1
0.2 mA
0.1 mA
25°C
−25C
10 −2
0
103
0
102
0
2
4
6
8
10
12
1
10
102
(
(
)
ector current IC mA
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
IO VI
VIN IO
102
10
104
103
2
10
1
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
V= 5 V
f = 1
IE =
Ta = 25°C
a = 2
1
10 −1
10 −2
0
102
1
10
102
1
10
0.4
0.6
0.8
1
1.2
1.4
(m )
A
V)
(
)
V
Output current IO
Input voltage VIN
ltage VCB
Characteristiccharts of UNR521VG
IC VCE
VCE(sat) IC
hFE IC
10
240
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
160
120
80
120
80
40
0
IB = 1.0 mA
1
10 −1
10 −2
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
0.6 mA
Ta = 75°C
25°C
0.5 mA
0.4 mA
−25°C
−25°C
40
0.3 mA
0.2 mA
0
1
10
102
103
1
10
102
103
0
2
4
6
8
10
12
( )
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
SJH00218AED
15
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR521xG Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
10 −1
0.4
0.8
1
1.2
(V)
1
1
10
102
1
10
102
(m
)
A
Output current IO
hFE IC
Ta = 75°C
Int voltage VIN
(
)
V
Collector-base voltage VCB
Characteristics charts of UNR52ZG
IC VCE
VCat) IC
160
10
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta =
= 1.0 mA
0.9 mA
A
0.7 mA
0.6 mA
0.5 mA
120
80
40
0
0.4 mA
0.3 mA
25°C
Ta = 75°C
25°C
10 −1
−25°C
2 mA
0.1 A
−25°C
10 −2
0
10
102
103
1
10
102
103
0
10
12
1
(
)
(
)
Cltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
102
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
= 1 MHz
IE = 0
Ta = 25°C
1
10 −1
10 −2
10 −1
102
1
10
102
0.4
0.6
0.8
1
1.2
1.4
1
10
(V)
(m )
A
Input voltage VIN
Output current IO
(
)
V
Collector-base voltage VCB
SJH00218AED
16
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.5)
1.0 0.10
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
相关型号：
UNR521FR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明