UNR911MJ [PANASONIC]
Silicon PNP epitaxial planar type; PNP硅外延平面型
| 型号： | UNR911MJ |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planar type |
| 文件： | 总19页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR911xJ Series (UN911xJ Series)
Silicon PNP epitaxial planar type
Unit: mm
+0.05
1.60
–0.03
+0.03
For digital circuits
0.12
–0.01
1.00 0.05
3
■ Features
• Costs can be reduced through downsizing of the equipment and
1
2
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
0.27 0.02
(0.50)(0.50)
■ Resistance by Part Number
5˚
Marking Symbol (R1)
(R2)
• UNR9110J (UN9110J) 6L
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
• UNR9111J (UN9111J) 6A
• UNR9112J (UN9112J) 6B
• UNR9113J (UN9113J) 6C
• UNR9114J (UN9114J) 6D
• UNR9115J (UN9115J) 6E
• UNR9116J (UN9116J) 6F
• UNR9117J (UN9117J) 6H
• UNR9118J (UN9118J) 6I
• UNR9119J (UN9119J) 6K
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
B
C
E
• UNR911AJ
• UNR911BJ
• UNR911CJ
6X
6Y
6Z
100 kΩ
100 kΩ
R2
• UNR911DJ (UN911DJ) 6M
• UNR911EJ (UN911EJ) 6N
• UNR911FJ (UN911FJ) 6O
• UNR911HJ (UN911HJ) 6P
• UNR911LJ (UN911LJ) 6Q
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
• UNR911MJ
• UNR911NJ
EI
EW
• UNR911TJ (UN911TJ) EY
• UNR911VJ FC
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
−50
V
Collector current
IC
PT
Tj
−100
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature
125
125
Tstg
−55 to +125
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00038BED
1
UNR911xJ Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-base cutoff current (Emitter open)
Emitter-base UNR9115J/9116J/9117J/911BJ
cutoff current UNR9110J/9113J/911AJ
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
V
− 0.1
− 0.5
− 0.01
− 0.1
− 0.2
µA
µA
mA
ICEO
IEBO
(Collector
open)
UNR9112J/9114J/911DJ/
911EJ/911MJ/911NJ/911TJ
UNR9111J
− 0.5
−1.0
−1.5
−2.0
20
UNR911FJ/911HJ
UNR9119J
UNR9118J/911CJ/911LJ/911VJ
Forward UNR911VJ
hFE
VCE = −10 V, IC = −5 mA
6
current
transfer
ratio
UNR9118J/911LJ
20
30
35
60
80
UNR9119J/911DJ/911FJ/911HJ
UNR9111J
UNR9112J/911EJ
UNR9113J/9114J/911AJ/
911CJ/911MJ
UNR911NJ/911TJ
80
400
460
UNR9110J/9115J/9116J/
9117J/911BJ
160
Collector-emitter saturation voltage
UNR911VJ
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
IC = −10 mA, IB = −1.5 mA
Output voltage high-level
Output voltage low-level
UNR9113J/911BJ
UNR911DJ
VOH
VOL
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCC = −5 V, VB = −10 V, RL = 1 kΩ
VCC = −5 V, VB = −6 V, RL = 1 kΩ
VCC = −5 V, VB = −5 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
−4.9
V
V
− 0.2
UNR911EJ
UNR911AJ
Transition frequency
UNR9113J
fT
80
150
80
MHz
UNR911AJ
UNR911CJ
150
Input
resistance UNR9119J
UNR911HJ/911MJ/911VJ
UNR9118J
R1
−30% 0.51 +30%
kΩ
1.0
2.2
4.7
10
UNR9116J/911FJ/911LJ/911NJ
UNR9111J/9114J/9115J
UNR9112J/9117J/911TJ
UNR9110J/9113J/911DJ/911EJ
UNR911AJ/911BJ
22
47
100
SJH00038BED
2
UNR911xJ Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Symbol
R2
Conditions
Min
Typ
47
Max
Unit
kΩ
Emitter-base resistance UNR911CJ
Resistance UNR911MJ
−30%
+30%
R1/R2
0.047
0.1
ratio
UNR911NJ
UNR9118J/9119J
UNR9114J
0.08
0.17
0.17
0.10
0.21
0.22
0.47
0.47
1.0
0.12
0.25
0.27
UNR911HJ
UNR911TJ
UNR911FJ
0.37
0.57
UNR911AJ/911VJ
UNR9111J/9112J/9113J/911LJ
UNR911EJ
0.8
1.70
3.7
1.0
1.2
2.60
5.7
2.14
4.7
UNR911DJ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR9110J
IC VCE
VCE(sat) IC
hFE IC
−120
−102
−10
400
300
200
100
0
Ta = 25°C
IC / IB = 10
VCE = –10 V
IB = −1.0 mA
− 0.9 mA
−100
−80
−60
−40
−20
0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3mA
Ta = 75°C
25°C
−1
Ta = 75°C
− 0.2mA
− 0.1mA
−25°C
25°C
−10 −1
−10 −2
−25°C
0
−2
−4
−6
−8
−10 −12
−10 −1
−1
−10
−102
−1
−10
−102
−103
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
3
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−102
−10
6
−
−
−
104
103
102
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10
−1
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
(
)
Input voltage VIN
V
Collecto-base voltage VCB
V
Characteristics charts of UNR9111J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
160
120
80
40
0
−160
IC / IB = 10
Ta = 75°C
25°C
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−120
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−25°C
−80
−40
0
−1
−0.4 mA
Ta = 75°C
25°C
−0.3 mA
−0.2 mA
−10 −1
−10 −2
−25°C
−0.1 mA
−1
−10
−102
−103
0
−2
−4
−6
−8
−10 −12
−10 −1
−1
−10
−102
(
)
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−102
−10
6
5
4
3
2
1
0
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
V
(
)
Collector-base voltage VCB
Input voltage VIN
V
(
)
Output current IO mA
SJH00038BED
4
UNR911xJ Series
Characteristics charts of UNR9112J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
400
300
200
100
0
−160
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9mA
−0.8mA
−120
−80
−40
0
−0.7mA
−0.6mA
−0.5mA
−0.4mA
Ta = 75°C
−1
25°C
−0.3mA
−0.2mA
−25°C
Ta = 75°C
25°C
−10 −1
−10 −2
−25°C
−0.1mA
−102
−10 −1
−1
−10
−102
−1
−10
−103
0
−2
−4
−6
−8
−10 −12
(
)
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
−104
−103
−102
−10
−1
−102
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −1
−1
−10
−102
(
)
(
)
Collector-base voltage VCB
V
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9113J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
400
300
200
100
0
−160
IC / IB = 10
IB = −1.0 mA
−0.9 mA
VCE = −10 V
Ta = 75°C
25°C
Ta = 25°C
−0.8 mA
−0.7 mA
−0.6 mA
−120
−80
−40
0
−0.5 mA
−0.4 mA
−1
−25°C
−0.3 mA
−0.2 mA
Ta = 75°C
25°C
−10 −1
−10 −2
−25°C
− 0.1 mA
−102
−10 −1
−1
−10
−102
−1
−10
−103
0
−2
−4
−6
−8
−10 −12
( )
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
5
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−102
−10
−104
−103
−102
−10
−1
6
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
(
)
V
Output current IO mA
Input voltage VIN
V
Collector-base voltage VCB
Characteristics charts of UNR9114J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
−0.6 mA
Ta = 75°C
−0.5 mA
−80
−0.4 mA
−1
25°C
−0.3 mA
Ta = 75°C
−25°C
−0.2 mA
−10 −1
−10 −2
25°C
−40
−0.1 mA
−25°C
0
−102
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−103
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−103
−102
−10
6
5
4
3
2
1
0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−10 −1
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
Collector-base voltage VCB
V
(
)
Input voltage VIN
V
Output current IO mA
SJH00038BED
6
UNR911xJ Series
Characteristics charts of UNR9115J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−120
−0.6 mA
−0.5 mA
Ta = 75°C
−0.4 mA
−80
−1
25°C
−0.3 mA
−0.2 mA
Ta = 75°C
−25°C
25°C
−10 −1
−10 −2
−40
−0.1 mA
−25°C
0
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−102
−10
V
O
= − 0.2 V
VO = −5 V
Ta = 25˚C
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 25°C
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
( )
Input voltage VIN V
Output current IO mA
Collector-base voltage VCB
V
Characteristics charts of UNR9116J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
Ta = 75°C
−0.6 mA
−0.5 mA
−80
−1
−0.4 mA
25°C
−0.3 mA
Ta = 75°C
−25°C
25°C
−0.2 mA
−0.1 mA
−10 −1
−10 −2
−40
−25°C
−1
0
−10 −1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
V
( )
Collector current IC mA
Collector-emitter voltage VCE
(
)
Collector current IC mA
7
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−102
−10
−104
−103
−102
−10
−1
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10 −1
Collector-base voltage VCB
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
V
(
)
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR9117J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−120
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−100
−80
−60
−40
−20
0
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−0.4 mA
Ta = 75°C
T
= 75°C
−1
a
−0.3 mA
−0.2 mA
25°C
25°C
−10 −1
−10 −2
−25°C
−25°C
−0.1 mA
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−102
−10
6
−104
−103
−102
−10
−1
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
−1
−10 −1
−10 −2
0
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
( )
Input voltage VIN V
Collector-base voltage VCB
V
SJH00038BED
8
UNR911xJ Series
Characteristics charts of UNR9118J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−240
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−160
−0.8 mA
−0.7 mA
Ta = 75°C
25°C
−120
−1
Ta = 75°C
−0.6 mA
−25°C
−0.5 mA
−0.4 mA
−0.3 mA
−0.2 mA
−80
−40
0
25°C
−10 −1
−10 −2
−25°C
−0.1 mA
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−102
−10
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
−1
−10 −1
−10 −2
0
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−10 −1
−1
−10
−102
(
)
Collector-base voltage VCB
V
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR9119J
IC VCE
VCE(sat) IC
hFE IC
−102
−10
160
120
80
40
0
−240
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−160
Ta = 75°C
−0.7 mA
−120
−1
Ta = 75°C
25°C
−25°C
−80
−40
0
−0.6 mA
−0.5 mA
25°C
−10 −1
−10 −2
−0.4 mA
−0.3 mA
−0.2 mA
−0.1 mA
−10 −12
−25°C
−10 −1
−1
−10
−102
−1
−10
−102
−103
0
−2
−4
−6
−8
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
9
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−102
−10
6
−104
−103
−102
−10
−1
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
E = 0
Ta = 25°C
I
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
( )
Input voltage VIN V
Output current IO mA
Collector-base voltage VCB
V
Characteristics charts of UNR911AJ
IC VCE
VCE(sat) IC
hFE IC
−100
250
200
150
100
50
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 75°C
Ta = 25°C
IB = − 0.5 mA
−80
− 0.4 mA
25°C
−60
−25°C
− 0.3 mA
Ta = 75°C
−40
− 0.2 mA
25°C
−10 −1
− 0.1 mA
−20
−25°C
−10 −2
−1
0
0
−10 −1
−1
−10
−102
−103
0
−2
−4
−6
−8
−10
−10
−102
(
)
(
)
Collector current IC mA
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−102
−103
−102
−10
10
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−10
−1
−10 −1
1
−1
−0.4
0
−10
−20
−30
−40
−1
−10
−102
−0.8
−1.2
−1.6
(
)
(
)
Collector-base voltage VCB
V
Output current IO mA
(
)
V
Input voltage VIN
SJH00038BED
10
UNR911xJ Series
Characteristics charts of UNR911BJ
IC VCE
VCE(sat) IC
hFE IC
VCE = −10 V
Ta = 75°C
−100
−10
−1
400
300
IC / IB = 10
Ta = 25°C
IB = − 0.5 mA
− 0.4 mA
−80
−60
−40
−20
0
25°C
− 0.3 mA
− 0.2 mA
−25°C
200
100
0
Ta = 75°C
−10 −1
25°C
− 0.1 mA
−25°C
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−103
0
−2
−4
−6
−8
−10
(
)
V
(
)
(
)
Collector-emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−102
−10
10
−10
−1
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
−10 −1
−1
−10 −1
1
−10 −2
−10 −1
−1
−10
−102
0
−10
−20
−30
−40
−0.4
−0.8
−1.2
−1.6
(
)
V
Collector-base voltage VCB
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR911CJ
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
−1
VCE = −10 V
Ta = 25°C
IC / IB = 10
Ta = 75°C
IB = −1.0 mA
− 0.9 mA
−120
−80
−40
0
25°C
− 0.8 mA
− 0.7 mA
−25°C
− 0.6 mA
− 0.5 mA
Ta = 75°C
−10 −1
25°C
− 0.4 mA
− 0.3 mA
−25°C
− 0.2 mA
− 0.1 mA
40
−10 −2
0
−1
−10
−102
−103
−1
−10
−102
0
−2
−4
−6
−8
−10
(
)
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
11
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
102
−102
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
10
−10
−1
−10 −1
1
−1
−10 −1
−1
−10
−102
0
−10
−20
−30
−40
0
−0.4
−0.8
(
)
V
Collector-base voltage VCB
(
)
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR911DJ
IC VCE
VCE(sat) IC
hFE IC
−102
160
120
80
40
0
−60
IC / IB = 10
IB = − 1.0 mA
− 0.9 mA
Ta = 25˚C
VCE = −10 V
Ta = 75°C
− 0.8 mA
−50
−40
−30
−20
−10
0
−10
25°C
− 0.3 mA
− 0.2 mA
−25°C
−1
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
25°C
−10 −1
−10 −2
− 0.1 mA
−25°C
−102
−10−1
−1
−10
−102
−1
−10
−103
0
−2
−4
−6
−8
−10 −12
(
)
(
)
V
Collector current IC mA
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−102
−10
6
5
4
3
2
1
0
−104
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−103
−102
−10
−1
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
( )
Output current IO mA
(
)
( )
Input voltage VIN V
Collector-base voltage VCB
V
SJH00038BED
12
UNR911xJ Series
Characteristics charts of UNR911EJ
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−60
400
300
200
100
0
IB = −1.0 mA
− 0.9 mA
IC / IB = 10
Ta = 25°C
VCE = −10 V
− 0.8 mA − 0.7 mA
−50
−40
−30
−20
−10
0
− 0.3 mA
− 0.2 mA
−1
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
Ta = 75°C
25°C
− 0.1 mA
−10 −1
−10 −2
25°C
−25°C
−25°C
−10−1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
V
(
)
Collector-emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−102
−10
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
(
)
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR911FJ
IC VCE
VCE(sat) IC
hFE IC
−102
−10
−240
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
Ta = 75°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−200
−160
−120
−80
−40
0
25°C
−1
−25°C
Ta = 75°C
−0.5 mA
25°C
−0.4 mA
−0.3 mA
−0.2 mA
−10 −1
−10 −2
−25°C
−0.1 mA
−10 −12
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−1
−10
−102
−103
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
13
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−102
−10
−104
−103
−102
−10
−1
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
V
(
)
Collector-base voltage VCB
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR911HJ
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
−120
−102
−10
IC / IB = 10
VCE = −10 V
Ta = 25°C
−100
−80
−60
−40
−20
0
IB = −0.5 mA
−0.4 mA
Ta = 75°C
25°C
−1
Ta = 75°C
25°C
−0.3 mA
−25°C
−10 −1
−10 −2
−0.2 mA
−0.1 mA
40
−25°C
0
−10 −1
−1
−10
−102
0
−2
−4
−6
−8
−10 −12
−1
−10
−102
−103
(
)
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
VIN IO
−102
−10
6
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−1
−10
−102
−10 −1
−1
−10
−102
(
)
V
Collector-base voltage VCB
(
)
Output current IO mA
SJH00038BED
14
UNR911xJ Series
Characteristics charts of UNR911LJ
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
−240
−102
−10
IC / IB = 10
VCE = −10 V
Ta = 25°C
−200
−160
IB = −1.0 mA
−120
−1
Ta = 75°C
− 0.8 mA
Ta = 75°C
25°C
−80
−40
0
− 0.6 mA
25°C
−25°C
−10 −1
−10 −2
−25°C
− 0.4 mA
− 0.2 mA
–10 –12
40
0
−1
−102
−103
0
–2
–4
–6
–8
−1
−10
−102
−103
−10
(
)
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
VIN IO
−102
−10
6
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−1
−10
−102
(
)
(
)
Output current IO mA
Collecto-base voltage VCB
V
Characteristics charts of UNR911MJ
IC VCE
VCE(sat) IC
hFE IC
240
−10
−1
500
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
160
−0.6 mA
Ta = 75°C
25°C
−10 −1
−10 −2
−10 −3
120
Ta = 75°C
25°C
−0.5 mA
−0.4 mA
−0.3 mA
−25°C
80
−25°C
40
−0.2 mA
−0.1 mA
0
−4
−6
−8
−1
−10
−102
−103
−1
−10
−102
−103
0
−2
−10 −12
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
15
SJH00038BED
UNR911xJ Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
10
−102
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
8
6
4
2
0
−1
−10 −1
−10 −2
−10 −1
−1
−10
−102
−10 −1
−1
−10
−102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
Input voltage VIN
V
(
)
Collector-base voltage VCB
V
Output current IO mA
Characteristics charts of UNR911NJ
IC VCE
VCE(sat) IC
hFE IC
−200
−10
300
250
200
150
100
50
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−150
−100
−50
0
Ta = 75°C
−1
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
25°C
−25°C
Ta = 75°C
−10 −1
25°C
− 0.3 mA
− 0.2 mA
−25°C
− 0.1 mA
−10 −2
−1
0
−10
−102
−103
–10
−102
−103
0
−2
−4
−6
−8
−10 −12
–1
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
–104
–103
–102
–10
–1
–102
−10
6
5
4
3
2
1
0
f = 1 MHz
IE = 0
Ta = 25°C
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
−1
–10 −1
–10 −2
–10 −1
–1
–10
–102
−1
−10
–102
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
(
)
V
Collector-base voltage VCB
( )
Output current IO mA
(
)
V
Input voltage VIN
SJH00038BED
16
UNR911xJ Series
Characteristics charts of UNR911TJ
IC VCE
VCE(sat) IC
hFE IC
–102
300
250
IC / IB = 10
VCE = 10 V
Ta = 25°C
−150
−10
Ta = 75°C
IB = −1.0 mA
− 0.9 mA
−100
200
150
100
50
25°C
− 0.7 mA
− 0.6 mA
− 0.8 mA
Ta = 75°C
−
1
− 0.5 mA
− 0.4 mA
−25°C
−25°C
−50
25°C
− 0.3 mA
− 0.2 mA
–10 −1
–10 −2
− 0.1 mA
0
0
–10 −1
−1
−10
–102
–103
−1
−10
–102
–103
0
−5
−10
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
–102
−10
−1
–104
–103
–102
−10
6
5
4
3
2
VO = −5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
−1
–10 −1
–10 −2
–10 −1
1
0
–10 −2
–10 −1
−1
−10
–102
−1
−10
–102
−0.25
−0.75
−1.25
(
)
(
)
Output current IO mA
(
)
V
Collector-base voltage VCB
V
Input voltage VIN
Characteristics charts of UNR911VJ
IC VCE
VCE(sat) IC
hFE IC
−10
12
10
8
−12
IC / IB = 10
VCE = −10 V
Ta = 25°C
Ta = 75°C
IB = −1.0 mA
−10
− 0.9 mA
25°C
− 0.8 mA
−1
−8
− 0.7 mA
Ta = 75°C
25°C
− 0.6 mA
6
−6
−4
−2
0
−25°C
− 0.5 mA
− 0.4 mA
–10 −1
4
−25°C
− 0.3 mA
− 0.2 mA
2
–10 −2
−1
− 0.1 mA
0
–102
–103
–1
–10
–102
−10
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
17
SJH00038BED
UNR911xJ Series
IO VIN
VIN IO
–104
–102
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
–103
–102
−10
−1
−10
−1
–10 −1
–10 −2
–10 −1
−1
−10
–102
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
(
)
(
)
Output current IO mA
Input voltage VIN
V
SJH00038BED
18
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
相关型号：
UNR911NG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC
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