UNRF1A7 [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRAMINIATURE, ML3-N2, 3 PIN;型号: | UNRF1A7 |
厂家: | PANASONIC |
描述: | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRAMINIATURE, ML3-N2, 3 PIN 开关 晶体管 |
文件: | 总3页 (文件大小:654K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNRF1A7
Silicon PNP epitaxial planar type
For digital circuits
Unit : mm
Features
Suitable for high-density mounting and downsizing of the equipment
for Ultraminiature leadless package
3
2
1
0.6 mm × 1.0 mm (height 0.39 mm)
+0.01
−0.03
0.39
1.00±0.05
Absolute Maximum Ratings Ta = 25°C
0.25±0.05
0.25±0.051
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
–50
Unit
V
2
3
–
V
0.65±0.01
0.05±0.03
mA
mW
°C
Total power dissipation
P
100
Junction temperature
Tj
125
1 : Base
2 : Emitter
Storage temperature
T
stg
–55 t+125
°C
3 : Collecter
ML3-N2 Package
Marking Symbol: 3Y
Internal Connection
R1
C
E
B
R2
Electrical Chstics Ta = 25°C±3°C
Symbol
Conditions
Min
–50
–50
Typ
Max
Unit
V
Collector-base voltagr open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
VCBO IC = –10 µA, IE = 0
VCEO IC = –2 mA, IB = 0
V
ICBO
ICEO
IEBO
hFE
VCB = –50 V, IE = 0
VCE = –50 V, IB = 0
VEB = –6 V, IC = 0
– 0.1
– 0.5
– 0.01
460
µA
µA
mA
VCE = –10 V, IC = –5 mA
160
–4.9
V
VCE(sat) IC = –10 mA, IB = – 0.3 mA
– 0.25
VOH
VOL
R1
VCC = –5 V, VB = – 0.5 V, RL = 1 kΩ
VCC = –5 V, VB = –2.5 V, RL = 1 kΩ
V
Output voltage low-level
– 0.2
V
Input resistance
—30%
22
∞
+30%
kΩ
Resistance ratio
R1 / R2
fT
Transition frequency
VCB = –10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: november 2005
SJH00112AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNRF1A7
PT T
IC VCE
VCE(sat) IC
a
−10
−1
120
−
100
I
B = −500 µA
IC / IB = 10
T
= 25°C
a
−90
−80
−70
−60
−50
−40
30
20
−450 µA
−400 µA
−350 µA
80
40
−300 µA
−250 µA
−200 µA
−10 µA
100 A
− 0.1
Ta = 85°C
−25°C
−
−
25°C
−10
−5µA
− 0.01
0
0
0
− 0.1
−1
−10
−100
40
80
120
0
−2
−4
−6
−10
−12
(
)
( )
Colletor-emitter voltage VCE V
Ambient temperature Ta °C
Collector current IC (mA)
hFE IC
Cob VCB
IO VIN
−100
−10
450
10
Ta = 2C
VO
= −5 V
VCE = −10 V
f = 1 Mz
Ta = 25°C
400
350
300
250
200
150
100
Ta = 85°C
25°C
−1
1
−25°C
−0.1
− 0.01
5
0
0.1
0
− 0.5 −1.0 −1.5 −2.0 −2.5
−1
−10
100
−1000
0
−5 −10 −15 −20 −25 −30 −35 −40
(V)
Input voltage VIN
Collectr currenIC (mA)
Collector-base voltage VCB (V)
O
−100
−10
−1
V
O = − 0.2
Ta = 25°C
− 0.1
− 0.1
−1
−10
−100
(m
A
)
Output current IO
2
SJH00112AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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