UNRF1A7 [PANASONIC]

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRAMINIATURE, ML3-N2, 3 PIN;
UNRF1A7
型号: UNRF1A7
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRAMINIATURE, ML3-N2, 3 PIN

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中文:  中文翻译
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This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNRF1A7  
Silicon PNP epitaxial planar type  
For digital circuits  
Unit : mm  
Features  
Suitable for high-density mounting and downsizing of the equipment  
for Ultraminiature leadless package  
3
2
1
0.6 mm × 1.0 mm (height 0.39 mm)  
+0.01  
0.03  
0.39  
1.00±0.05  
Absolute Maximum Ratings Ta = 25°C  
0.25±0.05  
0.25±0.051  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
2
3
V
0.65±0.01  
0.05±0.03  
mA  
mW  
°C  
Total power dissipation  
P
100  
Junction temperature  
Tj  
125  
1 : Base  
2 : Emitter  
Storage temperature  
T
stg  
55 t+125  
°C  
3 : Collecter  
ML3-N2 Package  
Marking Symbol: 3Y  
Internal Connection  
R1  
C
E
B
R2  
Electrical Chstics Ta = 25°C±3°C  
Symbol  
Conditions  
Min  
50  
50  
Typ  
Max  
Unit  
V
Collector-base voltagr open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
0.1  
0.5  
0.01  
460  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
160  
4.9  
V
VCE(sat) IC = –10 mA, IB = – 0.3 mA  
0.25  
VOH  
VOL  
R1  
VCC = –5 V, VB = – 0.5 V, RL = 1 kΩ  
VCC = –5 V, VB = –2.5 V, RL = 1 kΩ  
V
Output voltage low-level  
0.2  
V
Input resistance  
30%  
22  
+30%  
kΩ  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = –10 V, IE = 1 mA, f = 200 MHz  
80  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: november 2005  
SJH00112AED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
UNRF1A7  
PT T  
IC VCE  
VCE(sat) IC  
a
10  
1  
120  
100  
I
B = −500 µA  
IC / IB = 10  
T
= 25°C  
a
90  
80  
70  
60  
50  
40  
30  
20  
450 µA  
400 µA  
350 µA  
80  
40  
300 µA  
250 µA  
200 µA  
10 µA  
100 A  
0.1  
Ta = 85°C  
25°C  
25°C  
10  
5µA  
0.01  
0
0
0
0.1  
1  
10  
100  
40  
80  
120  
0
2  
4  
6  
10  
12  
(
)
( )  
Colletor-emitter voltage VCE V  
Ambient temperature Ta °C  
Collector current IC (mA)  
hFE IC  
Cob VCB  
IO VIN  
100  
10  
450  
10  
Ta = 2C  
VO  
= 5 V  
VCE = 10 V  
f = 1 Mz  
Ta = 25°C  
400  
350  
300  
250  
200  
150  
100  
Ta = 85°C  
25°C  
1  
1
25°C  
−0.1  
− 0.01  
5
0
0.1  
0
0.5 1.0 1.5 2.0 2.5  
1  
10  
100  
1000  
0
5 10 15 20 25 30 35 40  
(V)  
Input voltage VIN  
Collectr currenIC (mA)  
Collector-base voltage VCB (V)  
O  
100  
10  
1  
V
O = − 0.2
Ta = 25°C  
0.1  
0.1  
1  
10  
100  
(m  
A
)
Output current IO  
2
SJH00112AED  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  

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