UP04979 [PANASONIC]

Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2); 硅的N沟道MOSFET （ Tr1的）硅P沟道MOSFET （ Tr2的）


型号：	UP04979
厂家：	PANASONIC
描述：	Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 硅的N沟道MOSFET （ Tr1的）硅P沟道MOSFET （ Tr2的）晶体小信号场效应晶体管开关光电二极管
文件：	总5页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Composite Transistors

UP04979

Silicon N-channel MOSFET (Tr1)

Silicon P-channel MOSFET (Tr2)

Unit: mm

+0.05

–0.02

0.20

(0.30)

0.10 0.02

For switching

5˚

■ Features

• High-speed switching

• Gate protection diode built-in

• Two elements incorporated into one package

(Each transistor is separated)

(0.50)(0.50)

1.00 0.05

1.60 0.05

Display at No.1 lead

5˚

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• 2SJ0672 + 2SK3539

1: Source (FET1)

2: Gate (FET1)

4: Source (FET2)

5: Gate (FET2)

■ Absolute Maximum Ratings T_a= 25°C

3: Drain (FET2)

JEDEC: SOD-723

6: Drain (FET1)

SSMini6-F1 Package

Parameter

Symbol

Rating

Unit

Tr1

Drain-source surrender

voltage

V_DSS

Marking Symbol: 4T

Internal Connection

Gate-source voltage

(Drain open)

V_GSO

(D1) (G2) (S2)

Drain current

I_D

I_DP

100

200

−30

Peak drain current

Tr2

Drain-source surrender

voltage

V_DSS

Gate-source voltage

(Drain open)

V_GSO

(S1) (G1) (D2)

Drain current

I_D

I_DP

P_T

−100

−200

°C

Peak drain current

Overall Total power dissipation ^*

Junction temperature

125

T_ch

T_stg

125

Storage temperature

−55 to +125

°C

Note) : Measuring on substrate at 17 mm × 10 mm × 1 mm

Publication date: August 2004

SJJ00303AED

UP04979

■ Electrical Characteristics T_a= 25°C 3°C

• Tr1

Parameter

Symbol

V_DSS

I_DSS

Conditions

I_D= 10 µA, V_GS= 0

V_DS= 30 V, V_GS= 0

V_GS7 V, V_DS= 0

Min

Typ

Max

Unit

Drain-source surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate threshold voltage

1.0

µA

I_GSS

V_th

I_D= 1.0 µA, V_DS= 3.0 V

0.5

1.0

1.5

Drain-source ON resistance

R_DS(on)

I_D= 10 mA, V_GS= 2.5 V

Ω

I_D= 10 mA, V_GS= 4.0 V

Forward transfer admittance

Turn-on time ^*

Y_fs

t_on

I_D= 10 mA, V_DS= 3.0 V

200

V_DD= 3 V, V_GS= 0 V to 3 V, I_D= 10 mA

V_DD= 3 V, V_GS= 3 V to 0 V, I_D= 10 mA

Turn-off time ^*

t_off

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Refer to t_on, t_offtest circuit.

• Tr2

Parameter

Symbol

V_DSS

I_DSS

Conditions

I_D= −10 µA, V_GS= 0

V_DS= −20 V, V_GS= 0

V_GS7 V, V_DS= 0

Min

Typ

Max

Unit

Drain-source surrender voltage

Drain-source cutoff current

Gate-source cutoff current

Gate threshold voltage

−30

−1.0

µA

I_GSS

V_th

I_D= −1.0 µA, V_DS= −3.0 V

− 0.5

−1.0

−1.5

Drain-source ON resistance

R_DS(on)

I_D= −10 mA, V_GS= −2.5 V

Ω

I_D= −10 mA, V_GS= −4.0 V

Forward transfer admittance

Turn-on time ^*

Y_fs

t_on

I_D= −10 mA, V_DS= −3.0 V

V_DD= −3 V, V_GS= 0 V to −3 V, I_D= −10 mA

V_DD= −3 V, V_GS= −3 V to 0 V, I_D= −10 mA

850

Turn-off time ^*

t_off

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Refer to t_on, t_offtest circuit.

t_on, t_offtest citcuit (Tr1)

V_OUT

470 Ω

90%

10%

V_IN

V_GS= 3.0 V

50 Ω

V_DD= 3 V

V_OUT

10%

90%

t_on

t_off

t_on, t_offtest citcuit (Tr2)

V_OUT

280 Ω

10%

V_GS

90%

V_GS= 0 V to −3 V

50 Ω

V_DD= −3 V

90%

10%

V_OUT

t_on

t_off

SJJ00303AED

UP04979

Common characteristics chart

P_T T_a

140

120

100

120

Ambient temperature T_a(°C)

Characteristics charts of Tr1

I_D V_DS

I_D V_GS

Y_fs  I_D

180

160

140

120

100

300

250

200

150

100

V_GS= 3 V

T_a= 25°C

V_DS= 3 V

T_a= −25°C

V_GS= 2.0 V

25°C

85°C

1.9 V

1.8 V

1.7 V

1.6 V

1.5 V

100

150

200

250

)

Drain current I_D

(

)

(

)

Gate-source voltage V_GS

Drain-source voltage V_DS

Y_fs  V_GS

R_DS(on) V_GS

180

160

140

120

100

V_DS= 3 V

I_D= 10 mA

T_a= 85°C

25°C

−25°C

Gate-source voltage V_GS(V)

(

)

Gate-source voltage V_GS

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UP04979

Characteristics charts of Tr2

I_D V_DS

I_D V_GS

Y_fs  V_GS

−180

−160

−140

−120

−100

−80

−120

V_DS= −3 V

T_a= 25°C

V_DS= −3 V

T_a= −25°C

25°C

V_GS= −3.50 V

−100

−3.25 V

−80

−3.00 V

85°C

−2.75 V

−2.50 V

−60

−40

−60

−40

−20

−2

−4

−6

−2

−4

−6

−8

−10 −12

−2

−4

−6

Gate-source voltage V_GS(V)

(

)

( )

Gate-source voltage V_GSV

Drain-source voltage V_DS

R_DS(on) V_GS

I_D= −10 mA

T_a= 85°C

25°C

−25°C

−2

−4

−6

(

)

Gate-source voltage V_GS

SJJ00303AED

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2003 SEP

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