XN6213 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | XN6213 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN6213
Silicon NPN epitaxial planer transistor
Unit: mm
+0.2
–0.3
For switching/digital circuits
2.8
0.65±0.15
1.5+–00..0255
0.65±0.15
1
2
6
Features
■
5
4
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
3
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1213 × 2 elements
■
0.1 to 0.3
●
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
50
50
Rating
of
element
V
Marking Symbol: 8W
Internal Connection
100
mA
mW
˚C
PT
300
Overall Junction temperature
Storage temperature
Tj
150
Tr1
6
1
2
3
Tstg
–55 to +150
˚C
5
4
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
50
typ
max
Unit
V
Collector to base voltage
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
50
V
0.1
0.5
0.1
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
80
hFE (small/large)*1 VCE = 10V, IC = 5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 3.5V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
V
150
47
MHz
kΩ
R1
–30%
0.8
+30%
1.2
Resistance ratio
R1/R2
1.0
*1 Ratio between 2 elements
1
Composite Transistors
XN6213
PT — Ta
500
400
300
200
100
0
0
40
80
120
160
)
(
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
30
10
0.9mA
0.8mA
0.7mA
0.6mA
Ta=75˚C
25˚C
0.5mA
0.4mA
0.3mA
3
1
–25˚C
60
0.3
0.1
Ta=75˚C
25˚C
0.2mA
0.1mA
10
40
–25˚C
20
0.03
0.01
0
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
100
6
5
4
3
2
1
0
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
( )
Output current IO mA
(
V
)
( )
V
Collector to base voltage VCB
Input voltage VIN
2
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