XN8081 [PANASONIC]
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, SC-74, 6 PIN;
| 型号： | XN8081 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, SC-74, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN08081 (XN8081)
Silicon N-channel junction (FET)
Silicon NPN epitaxial planer transistor (Tr)
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
For analog switching
+0.10
–0.06
0.16
4
3
5
6
I Features
• Two elements incorporated into one package (J-FET + Tr)
• Reduction of the mounting area and assembly cost by one half
• Low-frequency and low-noise J-FET
2
1
+0.10
–0.05
+0.10
–0.05
0.30
0.50
I Basic Part Number of Element
• 2SK1103 + UNR1213 (UN1213)
10°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VGDS
ID
Rating
−50
Unit
V
1: Gate
2: Base
4: Collector
5: Source
FET
Gate to drain voltage
Drain current
20
mA
mA
V
3: Emitter
EIAJ: SC-74
6: Drain
Mini6-G1 Package
Gate current
IG
10
Tr
Collector to base voltage
Collector to emitter voltage
Collector current
VCBO
VCEO
IC
50
Marking Symbol: 9Z
Internal Connection
50
V
100
mA
mW
°C
4
5
6
1
Overall Total power dissipation
Junction temperature
PT
300
Tj
150
Tr
Storage temperature
Tstg
−55 to +150
°C
FET
R1
47 kΩ
R2
47 kΩ
3
2
Note) The part number in the parenthesis shows conventional part number.
Publication date: September 2001
SJJ00244AED
1
XN08081
I Electrical characteristics Ta = 25°C 3°C
• FET
Parameter
Gate to drain voltage
Drain current
Symbol
VGDS
IDSS
Conditions
IG = −10 µA, VDS = 0
VDS = 10 V, VGS = 0
VGS = −30 V, VDS = 0
Min
−50
0.2
Typ
Max
Unit
V
2.2
−10
−1.0
mA
nA
Gate cutoff current
IGSS
Gate to source cutoff voltage
Mutual conductance
VGSC
gm
VDS = 10 V, ID = 10 µA
V
mS
Ω
VDS = 10 V, ID = 1 mA, f = 1 kHz
VDS = 10 mV, VGS = 0
1.8
2.5
400
7
Drain on resistance
RDS(on)
Ciss
Common source short-circuit input
capacitance
VDS = 10 V, VGS = 0, f = 1 MHz
pF
Common source reverse transfer
capacitance
Crss
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
1.5
1.5
pF
pF
Common source short-circuit output
capacitance
• Tr
Parameter
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
IC = 2 mA, IB = 0
50
V
VCB = 50 V, IE = 0
0.1
0.5
0.1
µA
µA
mA
VCE = 50 V, IB = 0
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
Input resistance
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
80
VCE(sat)
VOH
VOL
0.25
V
4.9
V
0.2
+30%
1.2
V
R1
−30%
47
1.0
150
kΩ
Resistance ratio
R1/R2
fT
0.8
Transition frequency
VCB = 10 V, IE = −1 mA, f = 200 MHz
MHz
Common characteristics chart
PT Ta
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
SJJ00244AED
2
XN08081
Characteristics charts of FET
ID VDS
ID VGS
Yfs VGS
VDS = 10 V
Ta = 25°C
1.6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
5
4
3
2
1
0
Ta = 25˚C
VDS = 10 V
VGS = 0 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
− 0.1 V
− 0.2 V
− 0.3 V
− 0.4 V
25°C
Ta = –25°C
75°C
0
1
2
3
4
5
6
7
8
9
10
−1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2
0
−1.6 −1.4 −1.2 −1.0 − 0.8− 0.6− 0.4− 0.2
0
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Yfs VGS
VDS = 10 V
Ta = 25°C
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Drain current ID (mA)
Characteristics charts of Tr
IC VCE
VCE(sat) IC
hFE IC
10
140
320
Ta = 25°C
IC / IB = 10
VCE = 10 V
IB = 1.0 mA
280
240
200
160
120
80
120
100
80
60
40
20
0
0.9 mA
Ta = 75°C
25°C
0.8 mA
0.7 mA
0.6 mA
0.5 mA
1
0.4 mA
0.3 mA
0.2 mA
–25°C
0.1
Ta = 75°C
–25°C
0.1 mA
40
25°C
0.01
0
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11 12
0.1
1
10
100
1000
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (mA)
SJJ00244AED
3
XN08081
IO VIN
VIN IO
Cob VCB
10
100
10
1
1000
100
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
1
0.1
0.01
1
0.1
0
5
10 15 20 25 30 35
0.1
1
10
100
0
2
4
6
8
10
12
Collector to base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJJ00244AED
4
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2001 MAR
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