XP0B301 [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-88A, 5 PIN;
| 型号： | XP0B301 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-88A, 5 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP1B301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplification
2.1±0.1
1.25±0.1
0.425
0.425
5
Features
1
■
●
Two elements incorporated into one package.
(Tr1 emitter is connected to Tr2 base.)
2
3
4
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SB709A+2SD601A
■
●
0.2±0.1
1 : Base (Tr1)
2 : Base (Tr2)
Emitter (Tr1)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–60
Unit
V
S–Mini Type Package (5–pin)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
–50
V
Marking Symbol: 4Q
Internal Connection
Tr1
–7
V
–100
–200
60
mA
mA
V
ICP
Tr1
1
5
4
VCBO
VCEO
VEBO
IC
50
V
2
Tr2
7
V
3
100
mA
mA
mW
˚C
Tr2
ICP
200
PT
150
Tj
150
Overall
Tstg
–55 to +150
˚C
1
Composite Transistors
XP1B301
Electrical Characteristics (Ta=25˚C)
Tr1
■
●
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Symbol
VCBO
Conditions
IC = –10µA, IE = 0
min
–60
–50
–7
typ
max
Unit
V
VCEO
VEBO
ICBO
ICEO
hFE
IC = –2mA, IB = 0
V
IE = –10µA, IC = 0
V
VCB = –20V, IE = 0
– 0.1
–100
460
µA
µA
Collector cutoff current
VCE = –10V, IB = 0
Forward current transfer ratio
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
160
Collector to emitter saturation voltage VCE(sat)
– 0.3
80
– 0.5
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
2.7
●
Tr2
Parameter
Symbol
Conditions
IC = 10µA, IE = 0
min
60
50
7
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
IC = 2mA, IB = 0
V
IE = 10µA, IC = 0
V
VCB = 20V, IE = 0
0.1
100
460
0.3
µA
µA
Collector cutoff current
VCE = 10V, IB = 0
Forward current transfer ratio
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
160
Collector to emitter saturation voltage VCE(sat)
0.1
150
3.5
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
2
Composite Transistors
XP1B301
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of Tr1
IC — VCE
IC — IB
IB — VBE
–60
–50
–40
–30
–20
–10
0
–60
–50
–40
–30
–20
–10
0
–400
–350
–300
–250
–200
–150
–100
–50
VCE=–5V
Ta=25˚C
Ta=25˚C
VCE=–5V
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0
–0.4
–0.8
–1.2
–1.6
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
–100
–200
–300
–400
)
( )
V
(
( )
V
Collector to emitter voltage VCE
Base current IB µA
Base to emitter voltage VBE
IC — VBE
VCE(sat) — IC
hFE — IC
–10
600
500
400
300
200
100
0
–240
–200
–160
–120
–80
–40
0
IC/IB=10
VCE=–10V
VCE=–5V
–3
–1
25˚C
–25˚C
Ta=75˚C
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.3
–0.1
–25˚C
–25˚C
–0.03
–0.01
–0.003
–0.001
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–0.4
–0.8
–1.2
–1.6
–2.0
(
)
(
)
(
V
)
Collector current IC mA
Collector current IC mA
Base to emitter voltage VBE
3
Composite Transistors
XP1B301
fT — IE
Cob — VCB
NF — IE
6
5
4
3
2
1
160
8
7
6
5
4
3
2
1
0
VCB=–10V
f=1MHz
IE=0
Ta=25˚C
VCB=–5V
f=1kHz
Rg=2kΩ
Ta=25˚C
Ta=25˚C
140
120
100
80
60
40
20
0
0
0.01 0.03
0.1 0.3
1
3
10
0.1 0.3
1
3
10
30
100
–1
–2 –3 –5 –10 –20 –30 –50 –100
(
)
(
)
(
V
)
Emitter current IE mA
Emitter current IE mA
Collector to base voltage VCB
NF — IE
h Parameter — IE
h Parameter — VCE
20
18
16
14
12
10
8
VCB=–5V
Rg=50kΩ
Ta=25˚C
300
200
300
200
IE=2mA
f=270Hz
Ta=25˚C
hfe
hfe
100
50
100
50
hoe (µS)
f=100Hz
30
20
30
20
hoe (µS)
1kHz
10
5
10
5
10kHz
6
hie (kΩ)
hre (×10–4
)
4
3
2
3
2
hie (kΩ)
VCE=–5V
f=270Hz
Ta=25˚C
2
hre (×10–4
)
1
0
1
0.1 0.2 0.3 0.5
1
2
3
5
10
0.1 0.2 0.3 0.5
1
2
3
(
5
10
0.1 0.2 0.3 0.5
1
2
3
(
5
10
( )
V
)
)
Collector to emitter voltage VCE
Emitter current IE mA
Emitter current IE mA
Characteristics charts of Tr2
IC — VCE
IB — VBE
IC — VBE
240
200
160
120
80
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
VCE=10V
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
140µA
120µA
100µA
25˚C
80µA
Ta=75˚C
–25˚C
60µA
40µA
40
20µA
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
( )
V
( )
Base to emitter voltage VBE V
(
V
)
Base to emitter voltage VBE
Collector to emitter voltage VCE
4
Composite Transistors
XP1B301
IC — IB
VCE(sat) — IC
hFE — IC
240
100
600
500
400
300
200
100
0
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
200
160
120
80
Ta=75˚C
25˚C
3
1
–25˚C
0.3
0.1
25˚C
Ta=75˚C
–25˚C
40
0.03
0.01
0
0
200
400
600
800
)
1000
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
(
)
(
)
Base current IB µA
Collector current IC mA
Collector current IC mA
fT — IE
NV — IC
300
240
180
120
60
240
200
160
120
80
VCB=10V
Ta=25˚C
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
Rg=100kΩ
22kΩ
4.7kΩ
40
0
0
10
–0.1 –0.3
–1
–3
–10 –30 –100
20 30 50 100 200300500 1000
(
)
(
)
Emitter current IE mA
Collector current IC µA
5
相关型号：
XP0NG8A
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-88, 6 PIN
PANASONIC
XP1000-BD-000V
Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13
MIMIX
©2020 ICPDF网 联系我们和版权申明