XP1116 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XP1116 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP1116
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.1±0.1
1.25±0.1
0.425
0.425
Features
■
5
1
●
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2
3
4
●
Basic Part Number of Element
UN1116 × 2 elements
■
●
0.2±0.1
Absolute Maximum Ratings (Ta=25˚C)
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
S–Mini Type Package (5–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Rating
of
element
–50
V
Marking Symbol: 7N
Internal Connection
–100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
–50
–50
typ
max
Unit
V
Collector to base voltage
IC = –10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
V
– 0.1
– 0.5
– 0.01
460
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
VCE = –10V, IC = –5mA
160
0.5
hFE (small/large)*1 VCE = –10V, IC = –5mA
0.99
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
V
80
MHz
kΩ
Input resistance
R1
–30%
4.7
+30%
*1 Ratio between 2 elements
1
Composite Transistors
XP1116
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
hFE — IC
–160
–140
–120
–100
–80
–60
–40
–20
0
–100
400
300
200
100
0
IC/IB=10
Ta=25˚C
VCE=–10V
IB=–1.0mA
–30
–10
–0.9mA
–0.8mA
–0.7mA
Ta=75˚C
–0.6mA
–0.5mA
–0.4mA
–3
–1
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
Ta=75˚C
–25˚C
25˚C
–0.03
–0.01
–0.1mA
–25˚C
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
–10000
–100
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–0.1 –0.3
–1
–3
–10 –30 –100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
2
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