首页 |元器件品牌 | PCB在线计价/下单
首页 > 晶体管 > 小信号双极晶体管 > XP1C301TX

XP1C301TX

更新时间：2024-09-18 13:12:08
品牌：PANASONIC
描述：Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,

PDF下载

中文翻译

PCB计价

XP1C301TX 概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, 小信号双极晶体管

XP1C301TX 规格参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.8
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：CASCADED, 2 ELEMENTS最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-G5元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN AND PNP
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

XP1C301TX 数据手册

通过下载XP1C301TX数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Composite Transistors  
XP1C301  
Silicon PNP epitaxial planer transistor (Tr1)  
Silicon NPN epitaxial planer transistor (Tr2)  
Unit: mm  
For general amplification  
2.1±0.1  
1.25±0.1  
0.425  
0.425  
5
Features  
1
■
●
Two elements incorporated into one package.  
(Tr1 base is connected to Tr2 emitter.)  
2
3
4
●
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
2SB709A+2SD601A  
■
●
0.2±0.1  
1 : Emitter (Tr1)  
2 : Base (Tr1)  
Emitter (Tr2)  
3 : Base (Tr2)  
Absolute Maximum Ratings (Ta=25˚C)  
4 : Collector (Tr2)  
5 : Collector (Tr1)  
EIAJ : SC–88A  
■
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–60  
Unit  
V
S–Mini Type Package (5–pin)  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
–50  
V
Marking Symbol: 4R  
Internal Connection  
Tr1  
–7  
V
–100  
–200  
60  
mA  
mA  
V
ICP  
Tr1  
1
5
4
VCBO  
VCEO  
VEBO  
IC  
50  
V
2
Tr2  
7
V
3
100  
mA  
mA  
mW  
˚C  
Tr2  
ICP  
200  
PT  
150  
Tj  
150  
Overall  
Tstg  
–55 to +150  
˚C  
1
Composite Transistors  
XP1C301  
Electrical Characteristics (Ta=25˚C)  
Tr1  
■
●
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Symbol  
VCBO  
Conditions  
IC = –10µA, IE = 0  
min  
–60  
–50  
–7  
typ  
max  
Unit  
V
VCEO  
VEBO  
ICBO  
ICEO  
hFE  
IC = –2mA, IB = 0  
V
IE = –10µA, IC = 0  
V
VCB = –20V, IE = 0  
– 0.1  
–100  
460  
µA  
µA  
Collector cutoff current  
VCE = –10V, IB = 0  
Forward current transfer ratio  
VCE = –10V, IC = –2mA  
IC = –100mA, IB = –10mA  
VCB = –10V, IE = 1mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
160  
Collector to emitter saturation voltage VCE(sat)  
– 0.3  
80  
– 0.5  
V
MHz  
pF  
Transition frequency  
fT  
Collector output capacitance  
Cob  
2.7  
●
Tr2  
Parameter  
Symbol  
Conditions  
IC = 10µA, IE = 0  
min  
60  
50  
7
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
ICBO  
ICEO  
hFE  
IC = 2mA, IB = 0  
V
IE = 10µA, IC = 0  
V
VCB = 20V, IE = 0  
0.1  
100  
460  
0.3  
µA  
µA  
Collector cutoff current  
VCE = 10V, IB = 0  
Forward current transfer ratio  
VCE = 10V, IC = 2mA  
IC = 100mA, IB = 10mA  
VCB = 10V, IE = –2mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
160  
Collector to emitter saturation voltage VCE(sat)  
0.1  
150  
3.5  
V
MHz  
pF  
Transition frequency  
fT  
Collector output capacitance  
Cob  
2
Composite Transistors  
XP1C301  
Common characteristics chart  
PT — Ta  
250  
200  
150  
100  
50  
0
0
20 40 60 80 100 120 140 160  
(
)
Ambient temperature Ta ˚C  
Characteristics charts of Tr1  
IC — VCE  
IC — IB  
IB — VBE  
–60  
–50  
–40  
–30  
–20  
–10  
0
–60  
–50  
–40  
–30  
–20  
–10  
0
–400  
–350  
–300  
–250  
–200  
–150  
–100  
–50  
VCE=–5V  
Ta=25˚C  
Ta=25˚C  
VCE=–5V  
Ta=25˚C  
IB=–300µA  
–250µA  
–200µA  
–150µA  
–100µA  
–50µA  
0
0
–0.4  
–0.8  
–1.2  
–1.6  
0
–2 –4 –6 –8 –10 –12 –14 –16 –18  
0
–100  
–200  
–300  
–400  
)
( )  
V
(
( )  
V
Collector to emitter voltage VCE  
Base current IB µA  
Base to emitter voltage VBE  
IC — VBE  
VCE(sat) — IC  
hFE — IC  
–10  
600  
500  
400  
300  
200  
100  
0
–240  
–200  
–160  
–120  
–80  
–40  
0
IC/IB=10  
VCE=–10V  
VCE=–5V  
–3  
–1  
25˚C  
–25˚C  
Ta=75˚C  
Ta=75˚C  
25˚C  
Ta=75˚C  
25˚C  
–0.3  
–0.1  
–25˚C  
–25˚C  
–0.03  
–0.01  
–0.003  
–0.001  
–1  
–3  
–10 –30 –100 –300 –1000  
–1  
–3  
–10 –30 –100 –300 –1000  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
(
)
(
)
(
V
)
Collector current IC mA  
Collector current IC mA  
Base to emitter voltage VBE  
3
Composite Transistors  
XP1C301  
fT — IE  
Cob — VCB  
NF — IE  
6
5
4
3
2
1
160  
8
7
6
5
4
3
2
1
0
VCB=–10V  
f=1MHz  
IE=0  
Ta=25˚C  
VCB=–5V  
f=1kHz  
Rg=2kΩ  
Ta=25˚C  
Ta=25˚C  
140  
120  
100  
80  
60  
40  
20  
0
0
0.01 0.03  
0.1 0.3  
1
3
10  
0.1 0.3  
1
3
10  
30  
100  
–1  
–2 –3 –5 –10 –20 –30 –50 –100  
(
)
(
)
(
V
)
Emitter current IE mA  
Emitter current IE mA  
Collector to base voltage VCB  
NF — IE  
h Parameter — IE  
h Parameter — VCE  
20  
18  
16  
14  
12  
10  
8
VCB=–5V  
Rg=50kΩ  
Ta=25˚C  
300  
200  
300  
200  
IE=2mA  
f=270Hz  
Ta=25˚C  
hfe  
hfe  
100  
50  
100  
50  
hoe (µS)  
f=100Hz  
30  
20  
30  
20  
hoe (µS)  
1kHz  
10  
5
10  
5
10kHz  
6
hie (kΩ)  
hre (×10–4  
)
4
3
2
3
2
hie (kΩ)  
VCE=–5V  
f=270Hz  
Ta=25˚C  
2
hre (×10–4  
)
1
0
1
0.1 0.2 0.3 0.5  
1
2
3
5
10  
0.1 0.2 0.3 0.5  
1
2
3
(
5
10  
0.1 0.2 0.3 0.5  
1
2
3
(
5
10  
( )  
V
)
)
Collector to emitter voltage VCE  
Emitter current IE mA  
Emitter current IE mA  
Characteristics charts of Tr2  
IC — VCE  
IB — VBE  
IC — VBE  
240  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
0
1200  
1000  
800  
600  
400  
200  
0
VCE=10V  
Ta=25˚C  
VCE=10V  
Ta=25˚C  
IB=160µA  
140µA  
120µA  
100µA  
25˚C  
80µA  
Ta=75˚C  
–25˚C  
60µA  
40µA  
40  
20µA  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
( )  
V
( )  
Base to emitter voltage VBE V  
(
V
)
Base to emitter voltage VBE  
Collector to emitter voltage VCE  
4
Composite Transistors  
XP1C301  
IC — IB  
VCE(sat) — IC  
hFE — IC  
240  
100  
600  
500  
400  
300  
200  
100  
0
IC/IB=10  
VCE=10V  
VCE=10V  
Ta=25˚C  
30  
10  
200  
160  
120  
80  
Ta=75˚C  
25˚C  
3
1
–25˚C  
0.3  
0.1  
25˚C  
Ta=75˚C  
–25˚C  
40  
0.03  
0.01  
0
0
200  
400  
600  
800  
)
1000  
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
(
(
)
(
)
Base current IB µA  
Collector current IC mA  
Collector current IC mA  
fT — IE  
NV — IC  
300  
240  
180  
120  
60  
240  
200  
160  
120  
80  
VCB=10V  
Ta=25˚C  
VCE=10V  
GV=80dB  
Function=FLAT  
Ta=25˚C  
Rg=100kΩ  
22kΩ  
4.7kΩ  
40  
0
0
10  
–0.1 –0.3  
–1  
–3  
–10 –30 –100  
20 30 50 100 200300500 1000  
(
)
(
)
Emitter current IE mA  
Collector current IC µA  
5

XP1C301TX 相关器件

型号 制造商 描述 价格 文档
XP1D873 PANASONIC Silicon N-channel junction FET 获取价格
XP1D873TX PANASONIC Small Signal Field-Effect Transistor, 0.02A I(D), 2-Element, N-Channel, Silicon, Junction FET 获取价格
XP1D874 PANASONIC N-channel junction FET 获取价格
XP1E554 PANASONIC Silicon NPN epitaxial planer transistor 获取价格
XP2 LATTICE LatticeXP2 Family Data Sheet 获取价格
XP2-17 LATTICE LatticeXP2 Family Data Sheet 获取价格
XP2-30 LATTICE LatticeXP2 Family Data Sheet 获取价格
XP2-40 LATTICE LatticeXP2 Family Data Sheet 获取价格
XP2-5 LATTICE LatticeXP2 Family Data Sheet 获取价格
XP2-8 LATTICE LatticeXP2 Family Data Sheet 获取价格

XP1C301TX 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6

    • 热门型号

  • LM358
  • UPC8158
  • XC6105A618
  • 2N5087/D28Z
  • TMM-136-06-S-S-SM-23-P
  • NC7WZ16P6X
  • SDR10KSM
  • STC53K33N07
  • ERG3SG242
  • M2XRP2-J1Z1-R
  • TMM-139-01-G-S-SM
  • 54F20
  • TMP513
  • SZ6A11
  • PEL12S
  • 概述
  • 规格参数
  • 数据手册
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286