XP6210 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管型号: | XP6210 |
厂家: | PANASONIC |
描述: | Silicon NPN epitaxial planer transistor |
文件: | 总2页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Composite Transistors
XP6210
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.1±0.1
0.425
1.25±0.1
0.425
1
6
Features
■
2
3
5
4
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1210 × 2 elements
■
●
0.2±0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
S–Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
50
50
Rating
of
V
Marking Symbol: CR
Internal Connection
element
100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
6
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
50
typ
max
Unit
V
Collector to base voltage
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
50
V
0.1
0.5
µA
µA
mA
Collector cutoff current
Emitter cutoff current
0.01
460
Forward current transfer ratio
Forward current transfer hFE ratio
160
0.5
hFE (small/large)*1 VCE = 10V, IC = 5mA
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
VOH
VOL
fT
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
V
150
47
MHz
kΩ
Input resistance
R1
–30%
+30%
*1 Ratio between 2 elements
1
Composite Transistors
XP6210
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
hFE — IC
60
50
40
30
20
10
0
100
400
350
300
250
200
150
100
50
IC/IB=10
IB=1.0mA
0.9mA
0.8mA
Ta=25˚C
VCE=10V
30
10
Ta=75˚C
25˚C
3
1
0.4mA
0.5mA
0.6mA
0.7mA
0.3mA
Ta=75˚C
–25˚C
0.3
0.1
0.1mA
25˚C
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
3000
1000
30
10
Ta=25˚C
5
4
3
2
1
0
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
2
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