XP6435 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XP6435 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP6435
Silicon PNP epitaxial planer transistor
Unit: mm
For high-frequency amplification
2.1±0.1
0.425
1.25±0.1
0.425
1
6
Features
■
2
3
5
4
●
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
●
Basic Part Number of Element
2SA1022 × 2 elements
■
●
0.2±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–30
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
S–Mini Type Package (6–pin)
Rating
of
element
–20
V
–5
V
Marking Symbol: 7W
Internal Connection
–30
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
6
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
– 0.1
–100
–10
Unit
µA
VCB = –10V, IE = 0
Collector cutoff current
ICEO
IEBO
hFE
VCE = –20V, IB = 0
VEB = –5V, IC = 0
µA
Emitter cutoff current
µA
Forward current transfer ratio
Forward current transfer hFE ratio
VCB = –10V, IE = 1mA
50
220
hFE (small/large)*1 VCB = –10V, IE = 1mA
0.5
0.99
– 0.1
– 0.7
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
V
V
Base to emitter voltage
Transition frequency
Noise figure
VBE
fT
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCB = –10V, IE = 1mA, f = 10.7MHz
150
MHz
dB
Ω
NF
Zrb
2.8
22
Reverse transfer impedance
Common emitter reverse transfer capacitance Cre
1.2
pF
*1 Ratio between 2 elements
1
Composite Transistors
XP6435
PT — Ta
IC — VCE
VCE(sat) — IC
–30
–25
–20
–15
–10
–5
250
–100
IC/IB=10
Ta=25˚C
–30
–10
200
150
100
50
IB=–250µA
–3
–1
–200µA
–150µA
Ta=75˚C
–0.3
–0.1
25˚C
–100µA
–50µA
–25˚C
–0.03
–0.01
0
0
0
–2
–4
–6
–8
–10
–0.1 –0.3
–1
–3
–10 –30 –100
0
20 40 60 80 100 120 140 160
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Ambient temperature Ta ˚C
hFE — IC
Cob — VCB
Cre — VCE
5
4
3
2
1
0
120
100
80
60
40
20
0
6
5
4
3
2
1
0
f=1MHz
IE=0
Ta=25˚C
VCE=–10V
IC=–1mA
f=10.7MHz
Ta=25˚C
Ta=75˚C
25˚C
–25˚C
–1
–2 –3 –5 –10 –20 –30 –50 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
V
Collector to emitter voltage VCE
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
fT — IE
PG — IC
NF — IE
600
500
400
300
200
100
0
24
20
16
12
8
5
4
3
2
1
0
VCE=–10V
f=100MHz
Ta=25˚C
VCB=–10V
f=100MHz
Ta=25˚C
VCB=–10V
Ta=25˚C
4
0
0.1 0.3
1
3
10
30
100
–0.1 –0.3
–1
–3
–10 –30 –100
0.1 0.2 0.3 0.5
1
2
3
(
5
10
(
)
(
)
)
Emitter current IE mA
Collector current IC mA
Emitter current IE mA
2
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