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2SA879 [PANASONIC]

Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification); 硅NPN三重扩散平面类型（高击穿电压一般放大）
2SA879
元器件型号： 2SA879
生产厂家： PANASONIC SEMICONDUCTOR    PANASONIC SEMICONDUCTOR
描述和应用：

Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
硅NPN三重扩散平面类型（高击穿电压一般放大）
PDF文件： 总3页 (文件大小：50K)
下载文档：  下载PDF数据表文档文件
型号参数：2SA879参数
 查看货源

2SA879Q

 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51

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18 ETC

2SA879R

 TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51

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15 ETC

2SA880

 SI PNP EPITAXIAL PLANAR

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12 PANASONIC

2SA880

 SI PNP EPITAXIAL PLANAR

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28 PANASONIC

2SA881

 Epitaxial Planar NPN Silicon Transistors

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67 ROHM

2SA881/PQ

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881/PR

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881/Q

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881/QR

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881/R

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881/R

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881C1

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881C1

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881C1/PQ

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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0 ROHM

2SA881C1/PR

 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

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1 ROHM
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