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元器件品牌
2SC5335
[PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency output amplification); NPN硅外延平面型（对于低频输出放大）
元器件型号：
2SC5335
生产厂家：
PANASONIC SEMICONDUCTOR
描述和应用：
Silicon NPN epitaxial planer type(For low-frequency output amplification)
NPN硅外延平面型（对于低频输出放大）
晶体 小信号双极晶体管 放大器
PDF文件：
总2页 (文件大小：41K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC5335参数
查看货源
2SC5335(TENTATIVE)
Silicon NPN epitaxial planer type
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15
PANASONIC
2SC5335R
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT2, 3 PIN
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0
PANASONIC
2SC5335S
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT2, 3 PIN
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0
PANASONIC
2SC5335T
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT2, 3 PIN
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156
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0
PANASONIC
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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111
NEC
2SC5336
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
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14
RENESAS
2SC5336
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
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3
RENESAS
2SC5336(NE856M02)
Discrete
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20
ETC
2SC5336-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4
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156
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0
NEC
2SC5336RE
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
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27
ETC
2SC5336-RE
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4
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0
NEC
2SC5336-RE-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4
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0
NEC
2SC5336-RE-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4
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156
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0
NEC
2SC5336RE-T1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
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20
ETC
2SC5336RE-T1
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243
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0
RENESAS
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