1SS388_R1_00001 [PANJIT]

SILICON EPITAXIAL SCHOTTKY BARRIER TYPE;
1SS388_R1_00001
元器件型号: 1SS388_R1_00001
生产厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述和应用:

SILICON EPITAXIAL SCHOTTKY BARRIER TYPE

PDF文件: 总5页 (文件大小:175K)
下载文档:  下载PDF数据表文档文件
型号参数:1SS388_R1_00001参数

1SS388_R2_00001

SILICON EPITAXIAL SCHOTTKY BARRIER TYPE

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0 PANJIT

1SS388PT

SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.1 Ampere

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12 CHENMKO

1SS388-T1

Rectifier Diode, Schottky, 1 Element, 0.1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2

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0 WTE

1SS388TL3FT

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

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16 TOSHIBA

1SS388-TP

Rectifier Diode, 1 Element, 0.1A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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0 MCC

1SS388TPH3F

High Speed Switching Application

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9 TOSHIBA

1SS389

Small Package Low Forward Voltage VF = 0.23V(TYP.) IF = 5 mA

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26 TYSEMI

1SS389

Schottky Barrier Diode

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16 LUGUANG

1SS389

SCHOTTKY BARRIER DIODE

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50 HTSEMI

1SS389

HIGH SPEED SWITCHING APPLICATION

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25 KEXIN

1SS389

15 Volts Switching Diode

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21 MCC

1SS389

High Speed Switching Application

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61 TOSHIBA

1SS389

Schottky Barrier Diode

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62 TOSHIBA

1SS389

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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50 SEMTECH_ELEC

1SS389

DIODE (HIGH SEPPD SWITCHING APPLICATION)

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149 TOSHIBA