2N7002K-AU_L0_00001 [PANJIT]
60V N-Channel Enhancement Mode MOSFET - ESD Protected; 60V N沟道增强型MOSFET - ESD保护型号: | 2N7002K-AU_L0_00001 |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
文件: | 总7页 (文件大小:326K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N7002K-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Unit:inch(mm)
SOT-23
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
0.120(3.04)
0.110(2.80)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.056(1.40)
0.047(1.20)
• Acqire quality system certificate : TS16949
0.008(0.20)
0.003(0.08)
0.079(2.00)
0.070(1.80)
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.044(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
MECHANICAL DATA
• Case: SOT-23 Package
0.020(0.50)
0.013(0.35)
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : K72
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VDS
Limit
60
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS
+20
300
V
mA
ID
1)
Pulsed Drain Current
IDM
2000
mA
TA=25OC
TA=75OC
350
210
Maximum Power Dissipation
PD
mW
OC
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
TJ,TSTG
-55 to + 150
357
RθJA
OC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 29,2010-REV.02
PAGE . 1
2N7002K-AU
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
VGS(th)
RDS(on)
RDS(on)
IDSS
VGS=0V , ID=10μA
VDS=VGS , ID=250μA
VGS=4.5V , I D=200mA
VGS=10V , I D=500mA
VDS=60V , VGS=0V
60
-
-
-
-
-
-
-
-
2.5
4.0
3.0
1
V
V
1
-
Ω
-
-
-
μA
μA
IGSS
VGS=+20V , VDS=0V
VDS=15V , ID=250mA
+10
-
Forward Transconductance
gfS
100
mS
Dynamic
VDS=15V, ID=200mA
Total Gate Charge
Qg
-
-
0.8
nC
ns
V
GS=5V
Turn-On Time
ton
-
-
-
-
-
-
-
-
-
-
20
40
35
10
5
VDD=30V , RL=150Ω
ID=200mA , VGEN=10V
RG=10Ω
Turn-Off Time
toff
Input Capacitance
Ciss
Coss
Crss
VDS=25V , VGS=0V
f=1.0MHZ
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
Continuous Diode Forward Current
Pulse Diode Forward Current
VSD
IS=200mA , VGS=0V
-
-
-
0.82
1.3
300
V
IS
-
-
-
-
mA
mA
ISM
2000
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
October 29,2010-REV.02
PAGE . 2
2N7002K-AU
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
1.2
1.2
1
VGS= 6.0~10V
5.0V
VDS =10V
1
0.8
0.8
0.6
0.4
0.2
0
4.0V
0.6
0.4
0.2
3.0V
0
25oC
4
0
1
2
3
4
5
0
1
2
3
5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
VGS = 4.5V
ID =500mA
2
ID =200mA
1
V
GS=10V
0.4
0
2
3
4
5
6
7
8
9
10
0
0.2
0.6
0.8
1
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
1.8
VGS =10V
ID =500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature ( oC)
FIG.5- On Resistance vs Junction Temperature
October 29,2010-REV.02
PAGE . 3
2N7002K-AU
10
8
Vgs
VDS=10V
Qg
ID =250mA
6
4
2
Qsw
Vgs(th)
0
Qg(th)
0
0.2
0.4
0.6
0.8
1
Qgs
Qgd
Qg
Qg - Gate Charge (nC)
Fig.7 - Gate Charge
Fig.6 - Gate Charge Waveform
1.2
88
ID =250mA
ID = 250mA
86
84
82
80
78
76
74
72
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature ( oC)
TJ - Junction Temperature ( C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
70
10
f = 1MHz
VGS = 0V
VGS = 0V
60
50
40
1
o
TJ = 125 C
30
-55oC
Ciss
0.1
20
10
Coss
25oC
Crss
0.01
0.2
0
0
5
10
15
20
25
0.4
0.6
0.8
1
1.2
1.4
1.6
V
DS
- Drain-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
Fig.11 - Capacitance vs Drain to Source Voltage
October 29,2010-REV.02
PAGE . 4
2N7002K-AU
MOUNTING PAD LAYOUT
Unit:inch(mm)
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Ree
T/R - 3K per 7” plastic Reel
l
October 29,2010-REV.02
PAGE . 5
2N7002K-AU
Part No_packing code_Version
2N7002K-AU_R1_000A1
2N7002K-AU_R2_000A1
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX
Version Code XXXXX
Packing type
1st Code
Packing size code
2nd Code HF or RoHS 1st Code 2nd~5th Code
Tape and Ammunition Box
(T/B)
A
R
B
T
S
L
F
N/A
7"
0
1
HF
0
1
serial number
serial number
Tape and Reel
(T/R)
RoHS
Bulk Packing
(B/P)
13"
2
Tube Packing
(T/P)
26mm
52mm
X
Y
U
D
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
FORMING
October 29,2010-REV.02
PAGE . 6
2N7002K-AU
Disclaimer
Reproducing and modifying information of the document is prohibited without permission
from Panjit International Inc..
•
•
Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.
•
•
•
Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
•
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do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
October 29,2010-REV.02
PAGE . 7
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