BC807-25 [PANJIT]
PNP GENERAL PURPOSE TRANSISTORS; PNP通用晶体管
| 型号： | BC807-25 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | PNP GENERAL PURPOSE TRANSISTORS |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807 SERIES
PNP GENERAL PURPOSE TRANSISTORS
Unit: inch (mm)
SOT- 23
225 mWatts
POWER
45 Volts
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current IC = 500mA
.119(3.00)
.110(2.80)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Device Marking : BC807-16 : 7A
BC807-25 : 7B
.006(.15)MAX
.020(.50)
.013(.35)
3
COLLECTOR
BC807-40 : 7C
Top View
3
Collector
1
BASE
1
Base
2
Emitter
2
EMITTER
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
SYMBOL
Value
UNIT
V
V
V
CEO
CBO
EBO
-45
-50
v
v
-5.0
-500
225
v
Collector Current - Continuous
IC
mA
mW
Max Power Dissipation (Note 1)
P
TOT
Junction and Storage Temperature
Range
TJ
, TSTG
-55 to 150
oC
THERMALCHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
Thermal Resistance , Junction to Ambient
RθJA
556
oC/W
Note 1 : Transistor mounted on FR-4 board 70x60x1mm.
REV.0.0-FEB.12.2009
PAGE . 1
o
ELECTRICAL CHARACTERISTICS(TJ=25 C,unless otherwise notes)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
V
(BR)CEO
(BR)CES
-45
-50
-5.0
-
-
-
-
-
-
V
V
Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0)
Collector-Emitter Breakdown Voltage (VEB
=0V, Ic=-100uA
V
-
-
Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0)
Emitter-Base Cutoff Current (VEB=-4V)
V
(BR)EBO
V
I
EBO
-100
nA
J =25O
C
Collector-Base Cutoff Current (VCB=-20V,IE=0)
-0.1
-5.0
nA
uA
T
-
-
I
CBO
-
J =150O
C
T
-
-
-
DC Current Gain
(Ic=-100mA,VCE=-1V)
BC807-16
BC807-25
BC807-40
100
160
250
250
400
600
hFE
-
40
-
-
(Ic=-500mA,VcE=-1V)
Collector-Emitter Saturation Voltage (Ic=-500mA ,IB
Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V)
=
-50mA)
V
CE(SAT)
-
-
-
-0.7
V
V
V
BE(ON)
-
-
-1.2
Collector-Base Capacitance (VCB=-10v,I
E
=0,f=1MHz)
C
CBO
7.0
-
-
-
pF
MHz
Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz)
fT
100
ELECTRICAL CHARACTERISTICS CURVES
1000
1000
100
10
TJ = 150°C
TJ = 25°C
TJ = 150°C
100
TJ = 100°C
TJ = 25°C
TJ = 100°C
VCE = 1V
VCE = 1V
10
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current, IC (m A)
Collector Current, IC (m A)
Fig. 1. BC807-16 Typical hFE vs. IC
Fig. 2. BC807-25 Typical hFE vs. IC
1000
100
TJ = 150°C
C (EB)
IB
TJ = 25°C
TJ = 100°C
100
10
COB (EB)
VCE = 1V
10
0.01
1
0.1
1
10
100
1000
0.1
1
10
100
Collector Current, IC (m A)
Reverse Voltage, VR (V)
Fig. 3. BC807-40 Typical hFE vs. IC
Fig. 4. Typical Capacitances
REV.0.0-FEB.12.2009
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-FEB.12.2009
PAGE . 3
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