MBR1060CT [PANJIT]
10 AMPERES SCHOTTKY BARRIER RECTIFIERS; 10安培肖特基二极管型号: | MBR1060CT |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:431K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR1020CT~MBR10100CT
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
Unit : inch (mm)
TO-220AB
VOLTAGE
10 Amperes
20 to 100 Volts
CURRENT
.419(10.66)
.196(5.00)
.163(4.16)
.387(9.85)
FEATURES
.139(3.55)
MIN
.054(1.39)
.045(1.15)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
MECHANICALDATA
AC
AC
Case: TO-220AB molded plastic
Positive CT
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL MBR1020CT MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT MBR1080CT MBR10100CT UNITS
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
20
14
20
30
21
30
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
100
70
V
V
V
A
A
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current (See fig.1)
V
DC
100
I
AV
10
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
I
FSM
150
Maximum Forward Voltage at 5A, per leg
V
F
0.65
0.75
0.8
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
c
=25 OC
0.1
20
I
R
mA
T
c
=125O
C
Typical Thermal Resistance
RθJC
2
OC
/
W
Operating Junction Temperature Range
Storage Temperature Range
T
J
-50 TO
+
+
150
OC
OC
T
STG
-50 TO
175
Notes :
Both Bonding and Chip structure are available.
PAGE . 1
REV.0-MAR.30.2005
MBR1020CT~MBR10100CT
RATING AND CHARACTERISTIC CURVES
40
20,30,40,45V
25.0
20.0
15.0
10.0
10
8
6
4
50,60,80,100V
2
1.0
.8
.6
.4
MBR1020CT~MBR1045CT
MBR1050CT~MBR10100CT
5.0
0
TJ = 25OC
Pulse Width = 300us
1% Duty Cycle
.2
0
50
150
100
.1
CASE TEMPERATURE, O
C
.3
.4
.5
.6
.7
.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
.9 1.0
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
200
175
TC=125OC
8.3ms Single Half Since-Wave
JEDEC Method
1.0
150
125
100
75
50
25
0
TC=75OC
0.1
TC=25OC
0.01
1
2
5
10
20
50
100
0.001
20
40
60
80
100
NO. OF CYCLE AT 60HZ
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
PAGE . 2
REV.0-MAR.30.2005
相关型号:
MBR1060CT-1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN
SENSITRON
MBR1060CT-BP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB,
MCC
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