MBR1060FCT [PANJIT]
10 AMPERES SCHOTTKY BARRIER RECTIFIERS; 10安培肖特基二极管
| 型号： | MBR1060FCT |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1040FCT~MBR10200FCT
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 to 200 Volts
10 Amperes
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: ITO-220AB molded plastic
.027(.67)
.022(.57)
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR1040FCT MBR1045FCT MBR1050FCT MBR1060FCT MBR1080FCT MBR1090FCT MBR10100FCT MBR10150FCT MBR10200FCT
PARAMETER
SYMBOL
VR R M
UNITS
V
Maximum Recurrent Peak Reverse Voltage
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
90
63
90
100
70
150
105
150
200
140
200
Maximum RMS Voltage
VR M
V
V
A
S
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Current (See
fig.1)
I
F(AV)
10
Peak Forward Surge Current :8.3ms single
half sine-wave superimposed on rated
load(JEDEC method)
I
FSM
150
A
V
Maximum Forward Voltage at 5A, per leg
V
F
0.7
0.75
0.8
0.9
Maximum DC Reverse Current TJ =25 O C
0.05
20
I
R
mA
at Rated DC Blocking Voltage TJ =125O
Typical Thermal Resistance
C
O C
W
/
Rθ J C
2
Operating and Storage Junction
Temperature Range
O C
-55 to
+ 150
T
J
,TSTG
-65 to
+
175
Notes :
Both Bonding and Chip structure are available.
PAGE . 1
STAD-APR.30.2009
MBR1040FCT~MBR10200FCT
RATING AND CHARACTERISTIC CURVES
100
20.0
= 40V
= 45-200V
40-45V
16.0
10
50-60V
12.0
8.0
80-100V
150-200V
1.0
RESISTIVE OR
4.0
INDUCTIVE LOAD
0
A C
=25O
0
20
40
60
80
100 120 140 160 180
T
0.1
0.4
0.6
0.8
1.0
1.2
CASE TEMPERATURE, O
C
FORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.1- FORWARD CURRENT DERATING CURVE
10
200
175
TJ
=100OC
1.0
8.3ms Single Half Since-Wave
JEDEC Method
150
TJ=
75OC
125
100
75
50
25
0
0.1
.01
TJ=
25OC
1
2
5
10
20
50
100
.001
0
20 40 60 80 100 120 140
NO. OF CYCLE AT 60Hz
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
PAGE . 2
STAD-APR.30.2009
相关型号：
MBR1060FCT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
MCC
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