MBR3045FCT [PANJIT]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器型号: | MBR3045FCT |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR3040FCT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
40 to 200 Volts
30 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.114(2.9)
0.098(2.5)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
0.027(0.67)
0.022(0.57)
0.100(2.55)
0.100(2.55)
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR3040FCT MBR3045FCT MBR3050FCT MBR3060FCT MBR3080FCT MBR3090FCT MBR30100FCT MBR30150FCT MBR30200FCT
PARAMETER
SYMBOL
VRRM
UNITS
V
Maximum Recurrent Peak Reverse Voltage
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
90
63
90
100
70
150
105
150
200
140
200
Maximum RMS Voltage
VRMS
V
V
A
Maximum DC Blocking Voltage
Maximum Average Forward Current
VDC
100
IF(AV)
30
Peak Forward Surge Current :8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
VF
IR
275
A
V
Maximum Forward Voltage at 15A per leg
0.7
0.75
0.8
0.9
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TJ=25 OC
0.1
20
0.05
20
mA
TJ=125O
C
Typical Thermal Resistance
RJC
1.4
OC / W
Operating Junction and
StorageTemperature Range
OC
-55 to
+ 150
TJ,TSTG
-65 to + 175
Note :
Both Bonding and Chip structure are available.
August 30,2010-REV.02
PAGE . 1
MBR3040FCT SERIES
RATING AND CHARACTERISTIC CURVES
275
250
225
200
175
150
125
100
75
50
40V
45-200V
40
30
20
RESISTIVE OR
INDUCTIVE LOAD
10
0
50
0
20
40
60
80
100 120 140 160 180
25
0
1
2
5
10
20
50
100
LEAD TEMPERATURE, OC
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
40
TC=125OC
10
8
1.0
6
4
TC=75OC
2
0.1
1.0
.8
0
0.6
0.4
TC=25OC
40-45V
50-60V
80-100V
150-200V
0.01
0.2
.1
0
0.4 0.5 0.6
0.7 0.8
0.9 1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
August 30,2010-REV.02
PAGE . 2
相关型号:
MBR3045FCT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC
MBR3045FCT-BP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC
MBR3045FCT-TP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC
MBR3045FCT-TP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC
MBR3045PT
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
©2020 ICPDF网 联系我们和版权申明