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MMBTA05 [PANJIT]

NPN AND PNP HIGH VOLTAGE TRANSISTOR; NPN和PNP高压晶体管
MMBTA05
型号： MMBTA05
厂家： PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述：

NPN AND PNP HIGH VOLTAGE TRANSISTOR
NPN和PNP高压晶体管

晶体 晶体管 高压
文件： 总5页 (文件大小：204K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MMBTA05,MMBTA06,MMBTA55,MMBTA56  
NPN AND PNP HIGH VOLTAGE TRANSISTOR  
POWER  
225 mWatts  
60~80 Volts  
VOLTAGE  
FEATURES  
• NPN and PNP silicon, planar design  
• Collector current IC = 100mA  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
• Case: SOT-23, Plastic  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.008 gram  
• Marking :  
M M B TA 05=B 05 M M B TA 06=B 06  
M M B TA 55=B 55 M M B TA 56=B 56  
MAXIMUM RATINGS  
PARAMETER  
SYMBOL MMBTA05 MMBTA55 MMBTA06 MMBTA56 UNITS  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Circuit Figure  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
80  
80  
V
V
4.0  
V
500  
mA  
NPN  
PNP  
NPN  
PNP  
THERMAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL  
MAX  
UNIT  
mW  
Total Device Dissipation FR-5 Board (Note 1)T  
A
=25OC  
225  
1.8  
P
D
Derate above 25 O  
C
mW/OC  
Thermal Resistance , Junction to Ambient  
RθJA  
556  
OC/W  
Total Device Dissipation Alumina Substrate (Note 2)T  
A
=25OC  
300  
2.4  
mW  
P
D
Derate above 25 O  
C
mW/OC  
Thermal Resistance , Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
OC  
OC  
T
J
,TSTG  
-55 to 150  
NPN  
PNP  
1.FR-4=70 x 60 x 1mm.  
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina  
STAD-NOV.30.2005  
PAGE . 1  
MMBTA05,MMBTA06,MMBTA55,MMBTA56  
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)  
CHARACTERISTIC  
SYMBOL  
MIN  
MAX  
UNIT  
V
OFF CHATACTERISTICS  
Collector-Emitter Breakdown Voltage (Note 3)  
(I =1.0 mA , I =0)  
C
B
MMBTA05,MMBTA55  
MMBTA06,MMBTA56  
V(BR  
)
CEO  
60  
80  
-
-
Emitter-Base Breakdown Voltage  
(I =100 µA , I =0)  
V(BR  
)
EBO  
4.0  
-
-
V
E
C
Collector Cutoff Current  
(VCE=60V , I =0)  
µA  
ICES  
0.1  
B
Collector Cutoff Current  
µA  
(VCB=60V , I  
E
=0)  
=0)  
MMBTA05,MMBTA55  
MMBTA06,MMBTA56  
ICBO  
-
-
0.1  
0.1  
(VCB=80V , I  
E
ON CHATACTERISTICS  
DC Current Gain  
hFE  
-
(I  
(IC  
C
=10mA , VCE=1.0V)  
=100mA , VCE=1.0V)  
100  
100  
-
-
-
0.25  
V
V
Collector-Emitter Saturation Voltage  
(I =100mA , I =10mA)  
V
CE(sat)  
C
B
-
1.2  
Base-Emitter On Voltage  
(I =100mA , VCE=1.0V)  
V
BE(on)  
C
SMALL-SIGNAL CHARACTERISTICS  
Current-Gain-Bandwidth Product (Note 4)  
fT  
100  
-
MHz  
(IC=10mA , VCE=2.0V , f=100MHz)  
STAD-NOV.30.2005  
PAGE . 2  
MMBTA05,MMBTA06,MMBTA55,MMBTA56  
300  
200  
80  
60  
T = 25°C  
J
V
= 2.0 V  
CE  
T = 25°C  
J
40  
C
ibo  
20  
100  
70  
10  
8.0  
50  
C
obo  
6.0  
30  
4.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
0.1 0.2  
0.5 1.0 2.0  
5.0  
10  
20  
50 100  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Current–Gain — Bandwidth Product  
Figure 3. Capacitance  
400  
200  
1.0 k  
700  
500  
T = 125°C  
J
V
CE  
= 1.0 V  
t
s
300  
200  
25°C  
-55°C  
100  
70  
t
100  
80  
f
50  
V
= 40 V  
CC  
I /I = 10  
30  
20  
t
r
C
B
= I  
60  
I
B1 B2  
t @ V  
d
= 0.5 V  
BE(off)  
T = 25°C  
J
40  
10  
0.5 1.0 2.0 3.0 5.0 10  
20 30 50 100 200 300 500  
5.0 7.0 10  
20 30  
50 70 100  
200 300  
500  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. DC Current Gain  
Figure 4. Switching Time  
1.0  
T = 25°C  
J
0.8  
0.6  
0.4  
0.2  
V
@ I /I = 10  
C B  
BE(sat)  
V
@ V = 1.0 V  
CE  
BE(on)  
V
@ I /I = 10  
C B  
CE(sat)  
0
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100 200  
500  
I , COLLECTOR CURRENT (mA)  
C
Figure 6. “ON” Voltages  
STAD-NOV.30.2005  
PAGE . 3  
MMBTA05,MMBTA06,MMBTA55,MMBTA56  
1.0  
0.8  
0.6  
-0.8  
-1.2  
-1.6  
-2.0  
T = 25°C  
J
I =  
C
250 mA  
I =  
C
100 mA  
I =  
C
50 mA  
I =  
C
500 mA  
R
q
for V  
BE  
VB  
0.4  
0.2  
0
I =  
C
10 mA  
-2.4  
-2.8  
0.05 0.1 0.2  
0.5  
1.0 2.0  
5.0  
10  
20  
0.5 1.0 2.0  
5.0  
10  
20  
50  
100 200  
500  
50  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 7. Collector Saturation Region  
Figure 8. Base–Emitter Temperature  
Coefficient  
STAD-NOV.30.2005  
PAGE . 4  
MMBTA05,MMBTA06,MMBTA55,MMBTA56  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7" plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2009  
The information presented in this document is believed to be accurate and reliable. The specifications and information  
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the  
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or  
systems. Pan Jit does not convey any license under its patent rights or rights of others.  
STAD-OCT.14.2005  
PAGE . 5  

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