MMSZ4688-V [PANJIT]
SURFACE MOUNT SILICON ZENER DIODES; 表面贴装硅稳压二极管
| 型号： | MMSZ4688-V |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT SILICON ZENER DIODES |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZ4687-V SERIES
SURFACE MOUNT SILICON ZENER DIODES
Unit: inch (mm)
SOD-123
POWER
VOLTAGE
500 mWatts
4.3 to 43 Volts
FEATURES
.154(3.90)
.141(3.60)
• Planar Die construction
• 500mW Power Dissipation
.110(2.8)
.098(2.5)
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
.016(.40)MIN
.005(.12)MAX
• Approx. Weight: 0.01grams
• Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Maximum Power Dissipation @TA=25OC (Notes A)
Operating Junction and StorageTemperature Range
Symbol
Value
500
Units
mW
OC
P
D
-50 to +150
TJ
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
STAD-FEB.14.2007
PAGE . 1
MMSZ4687-V SERIES
Max Reverse
Leakage Current
Nominal Zener Voltage
Max. Zener Impedance
Marking
Code
Part Number
V
Z
@ IZT
IR @ VR
Z
ZT@IZT
ZZK@IZK
Ω
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
4
Nom. V
4.3
Min. V
4.09
Max. V
4.52
mA
mA
-
V
2
MMSZ4687-V
MMSZ4688-V
MMSZ4689-V
MMSZ4690-V
MMSZ4691-V
MMSZ4692-V
MMSZ4693-V
MMSZ4694-V
MMSZ4695-V
MMSZ4696-V
MMSZ4697-V
MMSZ4698-V
MMSZ4699-V
MMSZ4700-V
MMSZ4701-V
MMSZ4702-V
MMSZ4703-V
MMSZ4704-V
MMSZ4705-V
MMSZ4706-V
MMSZ4707-V
MMSZ4708-V
MMSZ4709-V
MMSZ4710-V
MMSZ4711-V
MMSZ4712-V
MMSZ4713-V
MMSZ4714-V
MMSZ4715-V
MMSZ4716-V
MMSZ4717-V
0.05
CP
CT
CU
CV
CA
CX
CY
CZ
DC
DD
DE
DF
DH
DJ
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
4.47
4.85
4.94
5.36
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
3
10
3
5.32
5.88
10
4
5.89
6.51
10
5
6.46
7.14
10
5.1
7.13
7.88
10
5.7
7.79
8.61
1
6.2
8.27
9.14
1
6.6
8.65
9.56
1
6.9
9.50
10.50
11.60
12.60
13.70
14.70
15.80
16.80
17.90
18.90
20.00
21.00
23.10
25.20
26.30
28.40
29.40
31.50
34.70
37.80
41.00
45.20
1
7.6
10.50
11.40
12.40
13.30
14.30
15.20
16.20
17.10
18.10
19.00
20.90
22.80
23.80
25.70
26.60
28.50
31.40
34.20
37.10
40.90
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
8.4
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
DK
DM
DN
DP
DT
DU
DV
DA
DZ
DY
EA
EC
ED
EE
EF
EH
EJ
20.4
21.2
22.8
25
27.3
29.6
32.6
STAD-FEB.14.2007
PAGE . 2
MMSZ4687-V SERIES
Typical Characteristics
Tamb = 25 °C unless otherwise specified
600
500
15
10
400
300
200
5
IZ = 5 mA
0
100
0
- 5
200
0
80
120
160
40
50
10
20
VZ - Z-Voltage (V)
0
30
40
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
200
Tj = 25 °C
100
150
VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
10
50
0
1
25
0
10
15
20
5
25
0
10
15
20
5
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
1.3
VZtn = VZt/VZ (25 °C)
1.2
1.1
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
Tj = 25 °C
1
4 x 10-4/K
2 x 10-4/K
0
0.1
0.01
1.0
0.9
0.8
- 2 x 10-4/K
- 4 x 10-4/K
0.001
1.0
0
0.2
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
0.4
0.6
0.8
240
0
- 60
60
120
180
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
STAD-FEB.14.2007
PAGE . 3
MMSZ4687-V SERIES
100
1000
100
10
80
IZ = 1 mA
Ptot = 500 mW
Tamb = 25 °C
60
5 mA
40
20
0
10 mA
Tj = 25 °C
25
20
1
12
VZ - Z-Voltage (V)
20
0
4
6
8
0
5
10
15
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
Figure 7. Z-Current vs. Z-Voltage
50
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
0
35
15
20
25
30
VZ - Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
tP - Pulse Length (ms)
Figure 10. Thermal Response
STAD-FEB.14.2007
PAGE . 4
MMSZ4687-V SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.01.2006
PAGE . 5
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