PJ1870 [PANJIT]
20V Common-Drain Dual N-Channel MOSFET-ESD Protected; 20V共漏极双N沟道MOSFET ， ESD保护
| 型号： | PJ1870 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 20V Common-Drain Dual N-Channel MOSFET-ESD Protected |
| 文件： | 总5页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJ1870
20V Common-Drain Dual N-Channel MOSFET-ESD Protected
FEATURES
• RDS(ON), VGS@4.5V,IDS@6.5A=19mΩ
• RDS(ON), VGS@3.5V,IDS@6.0A=21mΩ
• RDS(ON), VGS@2.5V,IDS@5.5A=27mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for Li-lon or Li-Polymer battery packs
• ESD Protected 1.5KV HBM
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TSSOP-8 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 1870
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
ID
IDM
PD
TJ, TSTG
RθJA
+ 12
6
V
A
A
Continuous Drain Current
Pulsed Drain Current 1)
30
TA = 25oC
1.5
0.9
Maximum Power Dissipation
W
TA = 75oC
Operating Junction and Storage Temperature Range
-55 to 150
83
oC
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
oC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAR.29.2006
PAGE . 1
PJ1870
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVD S S
VG S ( th )
RD S ( o n )
RD S ( o n )
RD S ( o n )
VG S = 0V, ID = 250uA
VD S =VG S , ID = 250uA
VG S = 4.5V, ID = 6.5A
VG S = 3.5V, ID = 6.0A
VG S = 2.5V, ID = 5.5A
20
-
-
0.5
-
-
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
-
-
-
15
17
21
19
21
27
mΩ
uA
uA
Zero Gate Voltage Drain Current
ID S S
IG S S
VD S = 20V, VG S = 0V
VG S = +12V, VD S = 0V
-
-
-
-
1
Gate Body Leakage
+ 10
Dynamic
VD S = 10V,ID = 6.5A,VG S = 5V
-
-
-
-
-
-
-
22.0
42.5
2.5
4.7
18
-
-
Total Gate Charge
Qg
nC
VD S = 10V, ID =6.5A
VG S = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Qg s
Qg d
-
-
T
23
40
195
d ( o n )
tr r
28
VD D = 10V, RL = 10Ω
ID = 1A, VG E N = 4.5V
ns
td ( o ff)
140
RG = 3.6
W
Turn-Off Fall Time
tf
-
30
42
Input Capacitance
Ci s s
Co s s
Cr s s
-
-
-
1450
210
-
-
-
VD S = 10V, VG S = 0V
f = 1.0 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode
155
Max. Diode Forward Current
Diode Forward Voltage
IS
-
-
-
-
1.5
1.2
A
V
VS D
IS = 1.5A, VG S = 0V
0.64
V
DD
VDD
Switching
Test Circuit
Gate Charge
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
STAD-MAR.29.2006
PAGE . 2
PJ1870
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
40
40
30
20
10
0
VGS= 3.5V, 4.0V, 4.5V, 5.0V
VDS =10V
3.0V
30
2.5V
20
TJ = 125oC
2.0V
10
25oC
1.5V
-55oC
1.5
0
0
1
2
3
4
5
0
0.5
1
2
2.5
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic
35
50
40
30
20
10
0
W
W
ID =6.5A
30
25
VGS = 2.5V
20
125oC
15
VGS=4.5V
10
TJ =25oC
5
0
0
10
20
30
40
0
2
4
6
8
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
FIG.3- On Resistance vs Drain Current
2000
1.6
f = 1MHz
VGS =4.5 V
1750
VGS = 0V
Ciss
ID =6.5A
1.4
1500
1250
1000
750
1.2
1
500
Coss
0.8
250
Crss
0
0.6
0
5
10
15
20
-50 -25
0
25
50
75
100 125 150
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (oC)
FIG.5- On Resistance vs Junction Temperature
FIG.6- Capacitance
STAD-MAR.29.2006
PAGE . 3
PJ1870
10
8
V D S = 10 V
ID = 6.5A
Vgs
Qg
6
4
2
Qsw
Vgs(th)
Qg(th)
0
0
5
10
15
20
25
30
35
40
45
Qgs
Qgd
Qg
Q g - G a te Cha rge (nC)
Fig.7 - Gate Charge Waveform
Fig.8 - Gate Charge
1.3
1.2
26
ID =250uA
25
24
23
22
21
ID =250uA
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75 100 125 150
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Tem perature (oC)
Fig.9 - Threshold Voltage vs Temperature
Fig.10 - Breakdown Voltage vs Junction Temperature
100
VGS = 0V
10
TJ = 125oC
1
-55oC
25oC
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.11 - Source-Drain Diode Forward Voltage
STAD-MAR.29.2006
PAGE . 4
PJ1870
MOUNTINGPADLAYOUT
ORDERINFORMATION
• Packing information
T/R - 3K per 13" plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAR.29.2006
PAGE . 5
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