PJA55P03 [PANJIT]

30V P-CHANNEL ENHANCEMENT MODE MOSFET; 30V P沟道增强型MOSFET
PJA55P03
型号: PJA55P03
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

30V P-CHANNEL ENHANCEMENT MODE MOSFET
30V P沟道增强型MOSFET

文件: 总6页 (文件大小:197K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PJA55P03  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
30 Volts  
4.3 Amperes  
CURRENT  
VOLTAGE  
FEATURES  
• RDS(ON), VGS@-10V,ID@-4.3A < 48 mΩ  
• RDS(ON), VGS@-4.5V,ID@-3.5A < 55 mΩ  
• Advanced Trench Process Technology  
0.119(3.02)  
0.111(2.82)  
• High Density Cell Design For Ultra Low On-Resistance  
• Specially Designed for DC/DC Converters  
0.067(1.70)  
0.059(1.50)  
• Low Voltage Application  
• Lead free in comply with EU RoHS 2002/95/EC directives.  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
0~8o  
0.008(0.20)  
0.004(0.10)  
0.079(2.00)  
0.071(1.80)  
0.049(1.25)  
0.041(1.05)  
MECHANICAL DATA  
• Case: SOT-23-1 Package  
0.045(1.15)  
0.041(1.05)  
0.004(0.10)MAX.  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Apporx. Weight : 0.0003 ounces, 0.0084grams  
• Marking : 55  
0.020(0.50)  
0.012(0.30)  
MAXIMUM RATINGS AND THERMAL Characteristics (TA=25OC unless otherwise noted )  
PARAMETER  
SYMBOL  
LIMIT  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
VDS  
-30  
V
V
VGS  
+12  
-4.3  
Steady-State  
Steady-State  
TA=25OC  
ID  
A
IDM  
-20  
A
Power Dissipation (Notes 1)  
TA=25OC  
PD  
1.25  
W
Typical Thermal Resistance (Notes 1)  
RθJA  
120  
OC/W  
OC  
Operating Junction Temperature and Storage Temperature Range  
TJ,TSTG  
-55 to + 150  
NOTES:  
1. Mounted on 48cm2 FR-4 PCB .  
November 25,2011-REV.00  
PAGE . 1  
PJA55P03  
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted )  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNITS  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
VGS=0V, ID=-250μA  
VDS=VGS, ID=-250μA  
VGS= -10V, I D= -4.3A  
-30  
-
-1.0  
40  
46  
-
-
V
V
VGS(th)  
-0.5  
-1.7  
48  
-
-
-
-
-
Drain-Source On-State Resistance  
RDS(on)  
mΩ  
V
GS= -4.5V, I D= -3.5A  
55  
Zero Gate Voltage Drain Current  
Gate -Source Leakage Current  
Diode Forward Voltage  
Dynamic  
IDSS  
IGSS  
VSD  
VDS= -30V, VGS=0V  
VGS= +12V, VDS=0V  
IS= -1A, VGS=0V  
-1  
μA  
nA  
V
-
+100  
-1.5  
-0.78  
Total Gate Charge  
Qg  
Qgs  
Qgd  
tdon  
tdoff  
tr  
-
-
-
-
-
-
-
-
-
-
26.8  
2.53  
2.96  
10.8  
64.8  
18.8  
9.6  
-
-
-
-
-
-
-
-
-
-
VDS= -15V, ID= -3.5A  
VGS= -10V  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-Off Delay Time  
Turn-On Rise Time  
nC  
VDD= -15V , VGEN= -10V,  
R = 6Ω , RL= 15Ω,  
ns  
G
ID= -1.0A  
Turn-Off Fall Time  
tf  
Input Capacitance  
Ciss  
Coss  
Crss  
1330  
105  
VDS= -15V, VGS=0V  
f=1.0MHZ  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
88  
November 25,2011-REV.00  
PAGE . 2  
PJA55P03  
RATING AND CHARACTERISTIC CURVES  
2000  
30  
25  
20  
15  
10  
5
VGS=0V  
TJ=25  
VGS=10V  
CISS  
f=1MHz  
1600  
VGS=4V  
1200  
TJ=25℃  
800  
VGS=3V  
CRSS  
COSS  
400  
0
0
0
3
6
9
12  
15  
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)  
VDS, Drain-Source Voltage(V)  
Fig.2 Drain Current VS Drain-Source Voltage  
Fig.1 Capacitance Variation  
70  
25  
20  
15  
10  
5
TJ=25℃  
VDS=2V  
TJ=25  
65  
60  
55  
VGS=4.5V  
50  
45  
VGS=10V  
40  
0
2
4
6
8
10 12 14 16 18 20  
0
1
2
3
4
5
6
ID, Drain Current(A)  
VGS, Gate-Source Voltage(V)  
Fig.3 Drain current VS Gate Source Voltage  
Fig.4 ON Resistance VS Drain Current  
100  
70  
TJ=25℃  
ID=-5A  
65  
80  
VGS=-4.5V  
ID=4.3A  
60  
55  
60  
40  
20  
0
50  
VGS=-10V  
45  
40  
0
2
4
6
8
10  
25  
50  
75  
100  
125  
150  
VGS, Gate-Source Voltage(V)  
TJ, Junction Temperature ()  
Fig.6 ON Resistance VS Junction Temperature  
Fig.5 ON Resistance VS Gate-Source Voltage  
November 25,2011-REV.00  
PAGE . 3  
PJA55P03  
RATING AND CHARACTERISTIC CURVES  
12  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
TJ=25  
10  
8
TJ=150℃  
V
DS=-15V  
GS=-10V  
V
ID=-4.3V  
TJ=125℃  
6
TJ=75℃  
TJ=100℃  
4
2
TJ=25℃  
0
0
5
10  
15  
20  
25  
30  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VDS, Drain-Source Voltage(V)  
QG, Total Gate Charge (nC)  
Fig.7 Gate-Charge Characteristics  
Fig.8 Source Drain Current VS Drain Source Voltage  
November 25,2011-REV.00  
PAGE . 4  
PJA55P03  
MOUNTING PAD LAYOUT  
Unitinch(mm)  
SOT-23-1  
0.031  
(0.80)  
0.075  
(1.90)  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7” plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2012  
The information presented in this document is believed to be accurate and reliable. The specifications and information herein  
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit  
does not convey any license under its patent rights or rights of others.  
November 25,2011-REV.00  
PAGE . 5  
PJA55P03  
Part No_packing code_Version  
For example :  
RB500V-40_R2_00001  
Serial number  
Version code means HF  
Packing size code means 13"  
Packing type means T/R  
Part No.  
Packing Code XX  
Version Code XXXXX  
HF or RoHS  
Packing  
type  
Packing size  
code  
1st Code  
2nd Code  
1st Code 2nd~5th Code  
T/B  
T/R  
A
R
B
T
S
L
F
N/A  
7"  
0
1
HF  
0
1
serial number  
serial number  
RoHS  
B/P  
13"  
2
T/P  
26mm  
52mm  
PBCU  
PBCD  
X
Y
U
D
TRR  
TRL  
FORMING  
November 25,2011-REV.00  
PAGE . 6  

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