PJD1NA80 [PANJIT]
800V N-Channel MOSFET;![PJD1NA80](http://pdffile.icpdf.com/pdf2/p00347/img/icpdf/PJD1NA80_2134275_icpdf.jpg)
型号: | PJD1NA80 |
厂家: | ![]() |
描述: | 800V N-Channel MOSFET |
文件: | 总8页 (文件大小:373K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
800 V
1 A
Voltage
Current
Features
RDS(ON), VGS@10V,ID@0.5A<16Ω
High switching speed
TO-220AB
SOT-223
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
TO-251AB
TO-220AB
TO-252
SOT-223
UNITS
VDS
VGS
ID
800
+30
V
V
Gate-Source Voltage
Continuous Drain Current
1
4
0.3
1.2
A
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
IDM
EAS
A
23
mJ
W
W/ oC
TC=25oC
Power Dissipation
34
45
34
3.3
PD
Derate above 25oC
0.27
0.36
0.27
0.026
Operating Junction and
TJ,TSTG
-55~150
oC
Storage Temperature Range
Typical Thermal resistance
oC/W
RθJC
RθJA
3.68
110
2.78
62.5
3.68
110
-
-
-
Junction to Case
37.9 (Note 4)
Junction to Ambient
Limited only By Maximum Junction Temperature
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 5)
BVDSS
VGS(th)
RDS(on)
IDSS
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=0.5A
VDS=800V,VGS=0V
VGS=+30V,VDS=0V
IS=1A,VGS=0V
800
-
-
V
V
3.1
3.5
4.4
16
-
-
-
-
12.5
Ω
-
-
-
1.0
+100
1.4
uA
nA
V
IGSS
VSD
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
6
1.3
2.6
203
17
1
-
-
-
-
-
-
-
-
-
-
VDS=640V, ID=1A,
VGS=10V (Note 2,3)
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
VDS=25V, VGS=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
8
VDD=400V, ID=1A,
RG=25Ω (Note 2,3)
Turn-On Rise Time
15
13
21
ns
Turn-Off Delay Time
td(off)
tf
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
IS
---
---
-
-
-
-
1
4
A
A
ISM
trr
-
-
160
0.3
-
-
ns
VGS=0V, IS=1A
dIF/ dt=100A/us (Note 2)
Reverse Recovery Charge
NOTES :
1. L=30mH, IAS=1.17A, VDD=110V, RG=25ohm, Starting TJ=25oC
Qrr
uC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
5. Guaranteed by design, not subject to production testing
March 10,2014-REV.00
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.5 Capacitance vs. Drain-Source Voltage
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction Temperature
Fig.6 Source-Drain Diode Forward Voltage
March 10,2014-REV.00
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate Charge
Fig.8 BVDSS vs. Junction Temperature
Fig.10 Maximum Safe Operating Area
Fig.12 Maximum Safe Operating Area
Fig.9 Threshold Voltage Variation with Temperature
Fig.11 Maximum Safe Operating Area
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJP1NA80 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.15 PJW1NA80 Normalized Transient Thermal Impedance vs. Pulse Width
March 10,2014-REV.00
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
Packaging Information
.
TO-220AB Dimension
Unit: mm
SOT-223 Dimension
Unit: mm
TO-252 Dimension
Unit: mm
TO-251AB Dimension
Unit: mm
March 10,2014-REV.00
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
PART NO PACKING CODE VERSION
Part No Packing Code
PJU1NA80_T0_00001
PJD1NA80_L2_00001
PJW1NA80_R2_00001
PJP1NA80_T0_00001
Package Type
TO-251AB
TO-252
Packing type
80pcs / Tube
Marking
U1NA80
D1NA80
1NA80
Version
Halogen free
Halogen free
Halogen free
Halogen free
3,000pcs / 13” reel
2,500pcs / 13” reel
50pcs / Tube
SOT-223
TO-220AB
P1NA80
March 10,2014-REV.00
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
Disclaimer
● Reproducing and modifying information of the document is prohibited without permission from Panjit
International Inc..
● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime
without notification. Please refer to our website for the latest document.
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including damages incidentally and consequentially occurred.
● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International
Inc. for any damages resulting from such improper use or sale.
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complaining.
March 10,2014-REV.00
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