PJF10N60 [PANJIT]
600V N-Channel Enhancement Mode MOSFET; 600V N沟道增强型MOSFET
| 型号： | PJF10N60 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 600V N-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJP10N60 / PJF10N60
TO-220AB / ITO-220AB
TO-220AB
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
ITO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
3
2
2
S
S
1
D
1
D
G
G
MECHANICAL DATA
INTERNAL SCHEMATIC DIAGRAM
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
P10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
PJP10N60
PJF10N60
Source
F10N60
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol PJP10N60
PJF10N60
Units
V
VDS
VGS
ID
600
+30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
V
A
A
10
40
10
40
IDM
TA=25OC
Maximum Power Dissipation
Derating Factor
156
50
PD
W
1.25
0.4
Operating Junction and Storage Temperature Range
TJ,TSTG
EAS
-55 to +150
500
OC
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
mJ
Junction-to-Case Thermal Resistance
R
0.8
62.5
2.5
OC/W
OC/W
θJC
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
R
100
θJA
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
March 31,2010-REV.00
PAGE . 1
PJP10N60 / PJF10N60
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltag e
BVDSS
VGS(th)
600
2.0
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
4.0
Drain-Source On-State
Resistance
RDS(on)
-
0.78
1.0
Ω
VGS= 10V, I D= 5.0A
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
10
uA
VDS=600V, VGS=0V
Gate Body Leakage
+100
nΑ
VGS=+30V, VDS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Qg
-
-
-
-
-
-
-
-
-
41.6
8.6
52
-
VDS=480V, ID=10A,
VGS=10V
Q
nC
gs
Q
14.2
16.2
18.6
40.2
22.8
1520
140
-
gd
t
22
32
86
38
-
d(on)
t
r
VDD=300V, ID =10A
VGS=10V, RG=25Ω
ns
t
d(off)
t
f
C
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
-
pF
oss
Reverse Transfer
Capacitance
C
-
12.5
-
rss
Source-Drain Diode
Max. Diode Forward Current
I S
-
-
-
-
-
-
-
10
40
1.4
-
A
A
-
Max.Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SM
VSD
-
-
V
IS=10A , VGS=0V
t
420
4.2
ns
uC
rr
VGS=0V, IF=10A
di/dt=100A/us
Q
-
rr
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
March 31,2010-REV.00
PAGE . 2
PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
20
100
10
VDS =50V
VGS= 20V~ 6.0V
16
5.0V
12
TJ = 125oC
1
25oC
8
4
0
0.1
0.01
-55oC
2
3
4
5
VGS - Gate-to-Source Voltage (V)
6
7
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
25
30
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
4
3
2
1
0
2
1.5
1
ID =5.0A
VGS=10V
TJ =25oC
VGS = 20V
0.5
0
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
9
10
0
2
4
6
ID - Drain Current (A)
8
10 12 14 16 18 20
Fig.4 On Resistance vs Gate to Source Voltage
Fig.3 On Resistance vs Drain Current
2800
2.8
2.4
2
f = 1MHz
VGS = 0V
VGS =10 V
ID =5.0A
2400
2000
1600
1200
800
400
0
Ciss
1.6
1.2
0.8
0.4
Coss
Crss
0
5
V
10
15
20
DS - Drain-to-Source Voltage (V)
25
30
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.6 Capacitance
Fig.5 On Resistance vs Junction Temperature
March 31,2010-REV.00
PAGE. 3
PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
12
ID =10A
10
1
VGS = 0V
10
V
DS=480V
V
DS=300V
8
6
4
2
0
25oC
V
DS=120V
TJ = 125oC
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
VSD - Source-to-Drain Voltage (V)
1.2
1.4
0
5
10 15 20 25 30 35 40 45
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
1.2
1.1
1
ID = 250µA
0.9
0.8
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
March 31,2010-REV.00
PAGE. 4
PJP10N60 / PJF10N60
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 31,2010-REV.00
PAGE . 5
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