PJQ1902 [PANJIT]

30V N-Channel Enhancement Mode MOSFET – ESD Protected;
PJQ1902
型号: PJQ1902
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

30V N-Channel Enhancement Mode MOSFET – ESD Protected

文件: 总6页 (文件大小:338K)
中文:  中文翻译
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PPJQ1902  
30V N-Channel Enhancement Mode MOSFET ESD Protected  
DFN3L  
Unit: inch(mm)  
30 V  
500mA  
Voltage  
Current  
Features  
RDS(ON) , VGS@4.5V, ID@350mA<1.2  
RDS(ON) , VGS@2.5V, ID@200mA<1.6Ω  
RDS(ON) , VGS@1.8V, ID@80mA<2.3Ω  
RDS(ON) , VGS@1.5V, ID@10mA<2.5(typ.)  
Specially Designed for Switch Load, PWM Application, etc.  
ESD Protected 2KV HBM  
Lead free in compliance with EU RoHS 2011/65/EU  
directive  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: DFN3L Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.00004 ounces, 0.0011 grams  
Marking: 2  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
30  
+10  
V
V
Continuous Drain Current  
Pulsed Drain Current  
500  
mA  
IDM  
1500  
700  
mA  
Ta=25oC  
Derate above 25oC  
mW  
mW/ oC  
oC  
Power Dissipation  
PD  
5.6  
Operating Junction and Storage Temperature Range  
Typical Thermal resistance  
TJ,TSTG  
-55~150  
Junction to Ambient (Note 3)  
oC/W  
RθJA  
175  
-
September 30,2015-REV.00  
Page 1  
PPJQ1902  
Electrical Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNITS  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
VGS(th)  
VGS=0V, ID=250uA  
VDS=VGS, ID=250uA  
VGS=4.5V, ID=350mA  
30  
0.6  
-
-
-
V
V
0.85  
0.94  
1.1  
1.2  
VGS=2.5V, ID=200mA  
-
1.32  
1.6  
Drain-Source On-State Resistance  
RDS(on)  
Ω
VGS=1.8V, ID=80mA  
VGS=1.5V, ID=10mA  
VDS=30V, VGS=0V  
VGS=+8V, VDS=0V  
VGS=+5V, VDS=0V  
-
-
-
-
-
1.82  
2.5  
0.01  
-
2.3  
-
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
IDSS  
IGSS  
1
+10  
+1  
uA  
-
Dynamic (Note 5)  
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
0.87  
0.26  
0.16  
34  
-
-
-
-
-
-
-
-
-
-
VDS=15V, ID=350mA,  
VGS=4.5V (Note 1,2)  
Gate-Source Charge  
Gate-Drain Charge  
nC  
pF  
Input Capacitance  
VDS=15V, VGS=0V,  
f=1.0MHZ  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Turn-On Rise Time  
8.9  
2.5  
7.1  
20  
VDD=15V, ID=80mA,  
VGS=4.0V,  
RG=6Ω (Note 1,2)  
ns  
Turn-Off Delay Time  
Turn-Off Fall Time  
td(off)  
tf  
41  
31  
Drain-Source Diode  
Maximum Continuous Drain-Source  
Diode Forward Current  
IS  
---  
-
-
-
350  
1.3  
mA  
V
Diode Forward Voltage  
VSD  
IS=350mA, VGS=0V  
0.88  
NOTES :  
1. Pulse width<300us, Duty cycle<2%  
2. Essentially independent of operating temperature typical characteristics.  
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is  
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper  
4. The maximum current rating is package limited  
5. Guaranteed by design, not subject to production testing.  
September 30,2015-REV.00  
Page 2  
PPJQ1902  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 On-Region Characteristics  
Fig.3 On-Resistance vs. Drain Current  
Fig.5 On-Resistance Variation with VGS.  
Fig.2 Transfer Characteristics  
Fig.4 On-Resistance vs. Junction temperature  
Fig.6 Body Diode Characteristics  
September 30,2015-REV.00  
Page 3  
PPJQ1902  
TYPICAL CHARACTERISTIC CURVES  
Fig.7 Gate-Charge Characteristics  
Fig.8 Threshold Voltage Variation with Temperature.  
Fig.9 Capacitance vs. Drain-Source Voltage.  
September 30,2015-REV.00  
Page 4  
PPJQ1902  
PART NO PACKING CODE VERSION  
Part No Packing Code  
Package Type  
Packing type  
Marking  
Version  
PJQ1902_R1_00001  
DFN3L  
8K pcs / 7reel  
2
Halogen free  
MOUNTING PAD LAYOUT  
September 30,2015-REV.00  
Page 5  
PPJQ1902  
Disclaimer  
Reproducing and modifying information of the document is prohibited without permission from Panjit  
International Inc..  
Panjit International Inc. reserves the rights to make changes of the content herein the document anytime  
without notification. Please refer to our website for the latest document.  
Panjit International Inc. disclaims any and all liability arising out of the application or use of any product  
including damages incidentally and consequentially occurred.  
Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for  
particular purpose, non-infringement and merchantability.  
Applications shown on the herein document are examples of standard use and operation. Customers are  
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no  
representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
The products shown herein are not designed and authorized for equipments requiring high level of reliability or  
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical  
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these  
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International  
Inc. for any damages resulting from such improper use or sale.  
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when  
complaining.  
September 30,2015-REV.00  
Page 6  

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