PJQMS05 [PANJIT]
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION; QUAD TVS /齐纳阵列，用于ESD和闭锁保护
| 型号： | PJQMS05 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJQMS05 SERIES
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This Quad TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated
solution to protect up to 4 data lines where the board space is a premium.
7
SPECIFICATION FEATURES
3
2
1
4
5
350W Power Dissipation (8x20µsec Waveform)
Low Leakage Current, Maximum of 5µA at rated voltage
6
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
7
New SMT package QFN 2mm x 2mm (Height 0.75mm)
Compatible with the SOT363 footprint.
7
APPLICATIONS
3
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
2
Mobile Phones and Accessories
QFN 2X2
Bottom View
Memory Card Port Protection
MAXIMUM RATINGS (Per Device)
Units
Rating
Symbol
Value
P
Peak Pulse Power (8x20µsec Waveform)
350
pp
W
V
ESD Voltage (HBM)
>25
kV
°C
°C
ESD
T
J
-50 to +125
-50 to +150
Operating Temperature Range
Storage Temperature Range
T
stg
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJQMS05
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
5
WRM
V
I
=
1mA
5V
6
V
Reverse Breakdown Voltage
Reverse Leakage Current
BR
BR
I
V
R
=
=
=
5
µA
V
R
V
cl
I
I
5A
9.8
13
Clamping Voltage (8x20µsec)
Clamping Voltage (8x20µsec)
pp
pp
V
cl
24A
V
0 Vdc Bias f = 1MHz
Between I/O pins and pin 7
Off State Junction Capacitance
Off State Junction Capacitance
225
125
pF
pF
Cj
Cj
5 Vdc Bias f = 1MHz
Between I/O pins and pin 7
4/19/2005
Page
1
www.panjit.com
PJQMS05 SERIES
Tj = 25°C
ELECTRICAL CHARACTERISTICS (Per Device)
PJQMS12
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
12
WRM
V
I
=
=
=
=
1mA
12V
5A
13.3
V
Reverse Breakdown Voltage
Reverse Leakage Current
BR
BR
I
V
R
1
µA
V
R
V
cl
I
I
20
25
Clamping Voltage (8x20µsec)
Clamping Voltage (8x20µsec)
pp
pp
V
cl
15A
V
0 Vdc Bias f = 1MHz
Between I/O pins and pin 7
Off State Junction Capacitance
100
pF
Cj
PJQMS15
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
15
WRM
V
I
=
=
=
=
1mA
15V
5A
16.7
V
Reverse Breakdown Voltage
Reverse Leakage Current
BR
BR
I
V
R
1
µA
V
R
V
cl
I
I
24
29
Clamping Voltage (8x20µsec)
Clamping Voltage (8x20µsec)
pp
pp
V
cl
12A
V
0 Vdc Bias f = 1MHz
Between I/O pins and pin 7
Off State Junction Capacitance
80
pF
Cj
PJQMS24
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
24
WRM
V
I
=
=
=
=
1mA
24V
5A
26.7
V
Reverse Breakdown Voltage
Reverse Leakage Current
BR
BR
I
V
R
1
µA
V
R
V
cl
I
I
40
44
Clamping Voltage (8x20µsec)
Clamping Voltage (8x20µsec)
pp
pp
V
cl
8A
V
0 Vdc Bias f = 1MHz
Between I/O pins and pin 7
Off State Junction Capacitance
60
pF
Cj
4/19/2005
Page 2
www.panjit.com
PJQMS05 SERIES
TJ = 25°C unless otherwise noted
TYPICAL CHARACTERISTICS
Surge Pulse Waveform Definition
Non-Repetitive Peak Pulse Power vs Pulse Time
Pulse Waveform
100
90
1000
100
10
80
70
60
50
40
30
20
10
0
50% of Ipp @ 20µs
1
0.1
0.01
Rise time 10-90% - 8µs
0
5
10
15
20
25
30
1
10
100
1000
time, µsec
Pulse Duration, µsec
Clamping Voltage vs. Peak current
Off-State Capacitance per Device - 1MHz
45
200
180
160
140
120
100
80
60
40
20
0
PJQMS24
40
35
30
25
20
15
10
5
PJQMS05
PJQMS15
PJQMS12
PJQMS05
PJQMS12
PJQMS15
PJQMS24
0
0
5
10
15
20
25
30
0
1
2
3
4
5
Ipp, A (8/20µsec)
Bias, Vdc
4/19/2005
Page 3
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PJSMS05 SERIES
TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS (in mm)
7
4
5
7
6
3
3
4
2
SUGGESTED PAD LAYOUT
1
1
6
7
I/O Data Line 1
I/O Data Line 2
I/O Data Line 3
I/O Data Line 4
Note: pin 2 and pin 7 could be fused with the
pin 7 in order to make ground connection to
these pins.
0.35 ± 0.05 mm
2.0 ± 0.05 mm
0.8 ± 0.05 mm
0.75 ± 0.025 mm
0.203 ± 0.025 mm
4/19/2005
Page 4
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