PJSD03TS_10 [PANJIT]
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS; 单线TVS二极管用于ESD保护的便携式电子产品
| 型号： | PJSD03TS_10 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
120 Watts
3~36 Volts
POWER
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
1
2
Cathode
Anode
PJSD12TS : LE
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20 μs)
ESD Voltage
Symbol
PPP
Value
120
Units
W
VESD
25
KV
OC
Operating Temperature
TJ
-50 to +150
-50 to +150
Storage Temperature
TSTG
OC
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
3.3
-
Units
-
4
-
-
-
-
V
V
I BR=1mA
VR=3.3V
I R
200
μA
Clamping Voltage(8/20μs)
VC
I PP=5A
-
-
6.5
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
-
-
-
-
200
100
pF
pF
3.3Vdc Bias=f=1MHz
PAGE . 1
July 20.2010-REV.00
PJSD03TS~PJSD36TS
PJSD05TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
-
6.0
-
-
-
-
5
-
I BR=1mA
VR=5V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
I PP=5A
-
-
9
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
-
-
-
-
110
60
pF
pF
PJSD07TS
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
7.0
-
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
7.5
-
-
-
-
I BR=1mA
VR=7V
V
I R
150
nA
Clamping Voltage(8/20μs)
VC
CJ
I PP=8.8A
-
-
-
-
22.7
85
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PJSD08TS
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
8.5
-
-
-
-
8
-
I BR=1mA
VR=8V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
CJ
I PP=5A
-
-
-
-
13
70
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PJSD12TS
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
13.3
-
-
-
-
12
-
I BR=1mA
VR=12V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
CJ
I PP=5A
-
-
-
-
17
60
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PAGE . 2
July 20.2010-REV.00
PJSD03TS~PJSD36TS
PJSD15TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
-
16.6
-
-
-
-
15
-
I BR=1mA
VR=15V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
CJ
I PP=5A
-
-
-
-
22
50
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PJSD24TS
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
26.7
-
-
-
-
24
-
I BR=1mA
VR=24V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
CJ
I PP=3A
-
-
-
-
32
25
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PJSD36TS
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
40
-
-
-
-
36
-
I BR=1mA
VR=36V
V
I R
5
μA
Clamping Voltage(8/20μs)
VC
CJ
I PP=1A
-
-
-
-
55
20
V
Off State Junction Capacitance
0Vdc Bias=f=1MHz
pF
PAGE . 3
July 20.2010-REV.00
PJSD03TS~PJSD36TS
100
80
120
Peak Pulssee Power
8/20ms
tf
Peak Value IPP
TEST
WAVEFORM
PARAMETERS
100
m
80
60
40
20
0
60
e-t
m
40
20
0
td=t IPP/2
Average PPoowweerr
25 50 75 100 125 150
0
0
5
10
15
20
25
30
TL-Lead Temperature-OC
T-Time-ms
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
10000
1000
100
10
0.01
1
10
100
1000
10000
td--PPuullssee Duration-ms
FIG. 3-Peak Pulse Power vs Pulse Time
PAGE . 4
July 20.2010-REV.00
PJSD03TS~PJSD36TS
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
July 20.2010-REV.00
PAGE . 5
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