PJSRV05W-4_09 [PANJIT]
LOW CAPACITANCE TVS DIODE ARRAY; 低电容TVS二极管阵列
| 型号： | PJSRV05W-4_09 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | LOW CAPACITANCE TVS DIODE ARRAY |
| 文件： | 总4页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJSRV05W-4
LOW CAPACITANCE TVS DIODE ARRAY
The PJSRV05W-4 has a low typical capacitance of 1.8pF and operates with virtually no insertion loss to 1GHz.This makes the
device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.
The low capacitance array configuration allows the user to protect four high-speed data or transmission lines.The low inductance
construction minimizes voltage overshoor during high current surge.
FEATURES
• IEC61000-4-2 ESD 15kV Air,8kV Contact compliance
• Low leakage current,maximum of 0.5µA at rated voltage
• Low clamping voltage
• Peak power dissipation of 150W under 8/20µs waveform
• Protect four I/O lines.
• Molded JEDEC SOT-363 package
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Weight: approximately 0.006 gram
• Marking : KE
APPLICATIONS
• USB 2.0 Power and Data Line Protection
• Video Graphics Cards
• Mouitors and Flat Panel Displays
• Digital Vedio Interface (DVI)
• 10/100/1000 Ethernet
• ATM Interfaces
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
150
UNIT
W
Peak Pulse Power (8/20µs waveform)
PPP
Peak Pulse Current (8/20µs waveform)
ESD Voltage (HBM Contact)
I
PPM
6
>8
A
V
ESD
kV
OC
Operating Junction and Storage Temperature Range
TJ
,TSTG
-55 to +150
REV.0.1-JAN.16.2009
PAGE . 1
PJSRV05W-4
ELECTRICAL CHARACTERISTICS (TJ=25oC)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
5
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
V
WRM
-
6
-
-
-
1
-
-
-
-
I
BR=1mA,
PIN 5 to 2
=5V,
V
BR
R
-
V
V
R
µA
V
I
3
PIN 5 to 2
I
I
PP=1A,Any I/O
pin to pin 2
V
V
C
C
-
15
25
2
PP=6A,Any I/O
pin to pin 2
-
V
0 Vdc,f=1MHz between
I/O lines and GND
C
C
J
J
-
pF
pF
0 Vdc,f=1MHz between
I/O lines
-
1
REV.0.1-JAN.16.2009
PAGE . 2
TYPICAL CHARACTERISTICS CURVES
Figure 1. Power Derating Curve
Figure 2. 8x20us Pulse Waveform
Figure 3. Junction Capacitance vs Reverse
Voltage
Figure 4. Clamping Voltage vs Peak Pulse
Current (8x20 Waveform)
10
1
0.1
0.01
0.1
1
10
100
1000
Pulse Duration-tp(ms)
Figure 5. Non-Repetitive Peak Pulse vs.
Pulse Time
Figure 6. Forward Voltage vs. Forward
Current
REV.0.1-JAN.16.2009
PAGE . 3
PJSRV05W-4
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-JAN.16.2009
PAGE . 4
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