PJU1N80 [PANJIT]
800V N-Channel Enhancement Mode MOSFET; 800V N沟道增强型MOSFET
| 型号： | PJU1N80 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 800V N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJP1N80 / PJU1N80
TO-220AB/TO-251
TO-220AB
800V N-Channel Enhancement Mode MOSFET
FEATURES
TO-251
• 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2 3
G
2
S
12
3
D
1
D
S
G
MECHANICAL DATA
INTERNAL SCHEMATIC DIAGRAM
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERINGINFORMATION
TYPE
MARKING
P1N80
PACKAGE
TO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
Gate
PJP1N80
PJU1N80
Source
U1N80
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
PJP1N80
PJU1N80
Units
V
800
+30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
VGS
ID
V
A
A
1
4
1
4
IDM
PD
TA=25OC
Maximum Power Dissipation
Derating factor
45
31
W
0.36
0.25
Operating Junction and Storage Temperature Range
TJ,TSTG
EAS
-55 to +150
9.8
OC
Avalanche Energy with Single Pulse
IAS=1.4A, VDD=50V, L=10mH
mJ
Junction-to-Case Thermal Resistance
R
2.78
62.5
4
OC/W
OC/W
θJC
Junction-to Ambient Thermal Resistance
R
100
θJA
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
PAGE . 1
PJP1N80 / PJU1N80
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltag e
BVDSS
VGS(th)
800
3.1
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
4.4
Drain-Source On-State
Resistance
RDS(on)
-
13.5
16
Ω
VGS= 10V, I D= 0.5A
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
10
uA
VDS=800V, VGS=0V
Gate Body Leakage
+100
nΑ
VGS=+30V, VDS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Qg
-
-
-
-
-
-
-
-
-
6.8
1.3
-
VDS=640V, ID=0.8A
VGS=10V
Q
-
nC
gs
Q
3.1
-
gd
t
11.4
14.3
36.7
15.7
160
15
-
d(on)
t
-
-
r
VDD=400V, ID =0.8A
ns
VGS=10V , RG=25Ω
t
d(off)
t
-
f
C
200
19
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
pF
oss
Reverse Transfer
Capacitance
C
-
1.35
1.75
rss
Source-Drain Diode
Max. Diode Forward Current
I S
-
-
-
-
-
-
-
1.0
4.0
1.5
-
A
A
-
Max.Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SM
VSD
-
-
V
IS=1A , VGS=0V
t
160
0.3
ns
uC
rr
VGS=0V, IF=1A
di/dt=100A/us
Q
-
rr
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
PJP1N80 / PJU1N80
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
1.4
VDS =40V
VGS= 20.0V ~ 7.0V
1.2
1
1
0.8
0.6
0.4
0.2
0
6.0V
5.0V
TJ = 125oC
0.1
25oC
-55oC
0.01
0
5
10
15
20
25
30
2
3
4
5
6
7
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
24
22
20
18
16
14
12
22
20
18
16
14
12
10
ID =1A
VGS=10V
VGS = 20V
TJ = 25oC
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
0
5
10
15
20
25
30
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
2.2
300
VGS =10 V
ID =0.5A
f = 1MHz
VGS = 0V
2
1.8
1.6
1.4
1.2
1
250
200
Ciss
150
100
0.8
0.6
0.4
Coss
50
Crss
0
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
PAGE. 3
PJP1N80 / PJU1N80
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
12
10
1
ID =0.8A
VGS = 0V
10
V
DS=640V
DS=400V
DS=160V
V
8
6
4
2
0
V
TJ = 125oC
25oC
-55oC
0.1
0.01
0.2 0.4 0.6 0.8
1
VSD - Source-to-Drain Voltage (V)
1.2 1.4
0
1
2
3
4
5
Qg - Gate Charge (nC)
6
7
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJP1N80 / PJU1N80
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for
packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm,
Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement
green compound material on order for the halogen free product
request.
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