PJU2NA60_T0_00001 [PANJIT]

600V N-Channel MOSFET;
PJU2NA60_T0_00001
型号: PJU2NA60_T0_00001
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

600V N-Channel MOSFET

文件: 总8页 (文件大小:457K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
600V N-Channel MOSFET  
600 V  
2 A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V,ID@1A<4.4Ω  
High switching speed  
ITO-220AB-F  
TO-220AB  
Improved dv/dt capability  
Low Gate Charge  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2011/65/EU directive.  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
TO-252  
TO-251AB  
Mechanical Data  
Case : TO-251AB,TO-252 ,TO-220AB, ITO-220AB-F Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams  
TO-220AB Approx. Weight : 0.067 ounces, 2 grams  
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
TO-251AB  
TO-220AB  
ITO-220AB-F  
TO-252  
UNITS  
VDS  
VGS  
ID  
600  
V
V
Gate-Source Voltage  
+30  
2
Continuous Drain Current  
Pulsed Drain Current  
Single Pulse Avalanche Energy (Note 1)  
A
IDM  
EAS  
8
A
115  
mJ  
W
W/ oC  
TC=25oC  
Power Dissipation  
34  
44  
23  
34  
PD  
Derate above 25oC  
0.27  
0.35  
0.18  
0.27  
Operating Junction and  
TJ,TSTG  
-55~150  
oC  
Storage Temperature Range  
Typical Thermal resistance  
oC/W  
RθJC  
RθJA  
3.67  
110  
2.84  
62.5  
5.43  
120  
3.67  
110  
-
-
Junction to Case  
Junction to Ambient  
Limited only By Maximum Junction Temperature  
March 10,2014-REV.00  
Page 1  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
Electrical Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNITS  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Drain-Source On-State Resistance  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Diode Forward Voltage  
Dynamic (Note 4)  
BVDSS  
VGS(th)  
RDS(on)  
IDSS  
VGS=0V,ID=250uA  
VDS=VGS,ID=250uA  
VGS=10V,ID=1A  
600  
-
-
4
V
V
2
-
3.2  
4
4.4  
1.0  
+100  
1.4  
Ω
VDS=600V,VGS=0V  
VGS=+30V,VDS=0V  
IS=2A,VGS=0V  
-
0.02  
+10  
0.86  
uA  
nA  
V
IGSS  
-
VSD  
-
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
5.7  
1.8  
2
-
-
-
-
-
-
-
-
-
-
VDS=480V, ID=2A,  
VGS=10V (Note 2,3)  
Gate-Source Charge  
nC  
pF  
Gate-Drain Charge  
Input Capacitance  
257  
39.7  
0.92  
10  
VDS=25V, VGS=0V,  
f=1.0MHZ  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
VDD=300V, ID=2A,  
RG=25Ω (Note 2,3)  
Turn-On Rise Time  
24  
ns  
Turn-Off Delay Time  
td(off)  
tf  
16  
Turn-Off Fall Time  
21  
Drain-Source Diode  
Maximum Continuous Drain-Source  
Diode Forward Current  
Maximum Pulsed Drain-Source  
Diode Forward Current  
Reverse Recovery Time  
IS  
---  
---  
-
-
-
-
2
8
A
A
ISM  
trr  
-
-
357  
2
-
-
ns  
VGS=0V, IS=2A  
dIF/ dt=100A/us (Note 2)  
Reverse Recovery Charge  
NOTES :  
1. L=30mH, IAS=2.7A, VDD=50V, RG=25ohm, Starting TJ=25oC  
Qrr  
uC  
2. Pulse width<300us, Duty cycle<2%  
3. Essentially independent of operating temperature typical characteristics.  
4. Guaranteed by design, not subject to production testing  
March 10,2014-REV.00  
Page 2  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 Output Characteristics  
Fig.3 On-Resistance vs. Drain Current  
Fig.5 Capacitance vs. Drain-Source Voltage  
Fig.2 Transfer Characteristics  
Fig.4 On-Resistance vs. Junction Temperature  
Fig.6 Source-Drain Diode Forward Voltage  
March 10,2014-REV.00  
Page 3  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
TYPICAL CHARACTERISTIC CURVES  
Fig.7 Gate Charge  
Fig.8 BVDSS vs. Junction Temperature  
Fig.10 Maximum Safe Operating Area  
Fig.12 Maximum Safe Operating Area  
Fig.9 Threshold Voltage Variation with Temperature  
Fig.11 Maximum Safe Operating Area  
March 10,2014-REV.00  
Page 4  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
TYPICAL CHARACTERISTIC CURVES  
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width  
Fig.14 PJP2NA60 Normalized Transient Thermal Impedance vs. Pulse Width  
Fig.15 PJF2NA60 Normalized Transient Thermal Impedance vs. Pulse Width  
March 10,2014-REV.00  
Page 5  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
Packaging Information  
.
ITO-220AB-F Dimension  
Unit: mm  
TO-220AB Dimension  
Unit: mm  
TO-252 Dimension  
Unit: mm  
TO-251AB Dimension  
Unit: mm  
March 10,2014-REV.00  
Page 6  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
PART NO PACKING CODE VERSION  
Part No Packing Code  
PJU2NA60_T0_00001  
PJD2NA60_L2_00001  
PJP2NA60_T0_00001  
PJF2NA60_T0_00001  
Package Type  
TO-251AB  
TO-252  
Packing type  
80pcs / Tube  
Marking  
U2NA60  
D2NA60  
P2NA60  
F2NA60  
Version  
Halogen free  
Halogen free  
Halogen free  
Halogen free  
3,000pcs / 13reel  
50pcs / Tube  
TO-220AB  
ITO-220AB-F  
50pcs / Tube  
March 10,2014-REV.00  
Page 7  
PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60  
Disclaimer  
Reproducing and modifying information of the document is prohibited without permission from Panjit  
International Inc..  
Panjit International Inc. reserves the rights to make changes of the content herein the document anytime  
without notification. Please refer to our website for the latest document.  
Panjit International Inc. disclaims any and all liability arising out of the application or use of any product  
including damages incidentally and consequentially occurred.  
Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for  
particular purpose, non-infringement and merchantability.  
Applications shown on the herein document are examples of standard use and operation. Customers are  
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no  
representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
The products shown herein are not designed and authorized for equipments requiring high level of reliability or  
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical  
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these  
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International  
Inc. for any damages resulting from such improper use or sale.  
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when  
complaining.  
March 10,2014-REV.00  
Page 8  

相关型号:

PJU2NA70

700V N-Channel MOSFET
PANJIT

PJU2NA90

900V N-Channel MOSFET
PANJIT

PJU3NA50

500V N-Channel MOSFET
PANJIT

PJU3NA80

800V N-Channel MOSFET
PANJIT

PJU45N06A

60V N-Channel Enhancement Mode MOSFET
PANJIT

PJU4NA60

600V N-Channel MOSFET
PANJIT

PJU4NA65

650V N-Channel MOSFET
PANJIT

PJU4NA65H

650V N-Channel MOSFET
PANJIT

PJU4NA70

700V N-Channel MOSFET
PANJIT

PJU4NA90

900V N-Channel MOSFET
PANJIT

PJU50N10L

100V N-Channel Enhancement Mode MOSFET
PANJIT

PJU5NA50

500V N-Channel MOSFET
PANJIT