PPJT7600 [PANJIT]
20V Complementary Enhancement Mode MOSFET . ESD Protected; 20V互补增强型MOSFET 。 ESD保护型号: | PPJT7600 |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | 20V Complementary Enhancement Mode MOSFET . ESD Protected |
文件: | 总9页 (文件大小:489K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
SOT-363
Unit: inch(mm)
20 / -20V
1 / -0.7A
Voltage
Current
Features
Application
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T60
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL N-Ch LIMIT P-Ch LIMIT
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
20
+8
1
-20
+8
V
V
Continuous Drain Current
-0.7
-2.8
A
(Note 4)
Pulsed Drain Current
IDM
4
A
Ta=25oC
Derate above 25oC
350
2.8
mW
mW/ oC
oC
Power Dissipation
PD
Operating Junction and Storage Temperature Range
Thermal resistance
TJ,TSTG
-55~150
Junction to Ambient (Note 3)
oC/W
RθJA
357
-
August 16,2013-REV.00
Page 1
PPJT7600
N-Channel Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
VGS=0V, ID= 250uA
VDS=VGS, ID= 250uA
VGS= 4.5V, ID= 1A
VGS= 2.5V, ID= 0.7A
VGS= 1.8V, ID= 0.3A
VDS= 20V, VGS=0V
VGS=+8V, VDS=0V
20
-
-
V
V
0.7
0.8
114
160
280
0.01
+2
1.1
150
215
400
1
-
-
-
-
-
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
IDSS
IGSS
uA
uA
+10
Total Gate Charge
Qg
Qgs
-
-
-
-
-
-
1.6
0.3
0.41
105
25
-
-
-
-
-
-
VDS=10V, ID=1A,
VGS=4.5V (Note 1,2)
Gate-Source Charge
Gate-Drain Charge
nC
pF
Qgd
Input Capacitance
Ciss
Coss
Crss
VDS=10V, VGS=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching
15
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
-
5.8
25.7
41
-
-
-
-
VDD=10V, ID=1A,
VGS=4.5V, RG=6Ω
(Note 1,2)
ns
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
-
-
31
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
---
-
1
A
V
VSD
IS= 1A, VGS=0V
0.85
1.2
August 16,2013-REV.00
Page 2
PPJT7600
P-Channel Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
VGS=0V, ID= -250uA
VDS=VGS, ID= -250uA
VGS= -4.5V, ID= -0.7A
VGS= -2.5V, ID= -0.6A
VGS= -1.8V, ID= -0.5A
-20
-
-
V
V
-0.5
-0.64
260
310
400
-1
-
-
-
325
420
600
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=-20V, VGS=0V
VGS=+8V, VDS=0V
-
-
-0.01
+3.5
-1
uA
uA
+10
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qg
Qgs
-
-
-
-
-
-
2.2
0.4
-
-
-
-
-
-
VDS=-10V, ID=-0.7A,
VGS=-4.5V (Note 1,2)
nC
pF
Qgd
0.5
Ciss
Coss
Crss
165
25
VDS=-10V, VGS=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching
14.7
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
-
8.9
37
-
-
-
-
VDD=-10V, ID=-0.7A,
VGS=-4.5V, RG=6Ω
(Note 1,2)
ns
td(off)
tf
127
70
-
-
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
-
-1
A
V
Diode Forward Voltage
NOTES :
VSD
IS=-1A, VGS=0V
-0.86
-1.2
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
August 16,2013-REV.00
Page 3
PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Body Dlode Characterlslcs
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
August 16,2013-REV.00
Page 4
PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
August 16,2013-REV.00
Page 5
PPJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Body Dlode Characterlslcs
August 16,2013-REV.00
Page 6
PPJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Threshold Voltage Variation with Temperature.
August 16,2013-REV.00
Page 7
PPJT7600
PART NO PACKING CODE VERSION
Part No Packing Code
PJT7600_R1_00001
PJT7600_R2_00001
Package Type
SOT-363
Packing type
3K pcs / 7” reel
10K pcs / 13” reel
Marking
T60
Version
Halogen free
Halogen free
SOT-363
T60
MOUNTING PAD LAYOUT
August 16,2013-REV.00
Page 8
PPJT7600
Disclaimer
● Reproducing and modifying information of the document is prohibited without permission from Panjit
International Inc..
● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime
without notification. Please refer to our website for the latest document.
● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product
including damages incidentally and consequentially occurred.
● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International
Inc. for any damages resulting from such improper use or sale.
● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when
complaining.
August 16,2013-REV.00
Page 9
相关型号:
©2020 ICPDF网 联系我们和版权申明