SIC02A120S [PANJIT]
SILICON CARBIDE SCHOTTKY DIODE;型号: | SIC02A120S |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | SILICON CARBIDE SCHOTTKY DIODE |
文件: | 总5页 (文件大小:480K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
1200 V
2 A
Voltage
Current
TO-252AA
Unit: inch(mm)
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 02A120S
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL TEST CONDITIONS
VALUE
UNITS
VRRM
VRSM
VR
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=165oC
TC=25oC
TC=125oC
1200
1200
1200
9
V
V
V
A
A
A
A
A
Maximum DC Blocking Voltage
Continuous Forward Current
IF(AV)
5
2
19
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
IFRM
16
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SiC02A120S
Maximum Ratings
PARAMETER
SYMBOL TEST CONDITIONS
VALUE
27
UNITS
TC=25oC
TC=125oC
IFSM
A
A
Non-Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave)
26
Non-Repetitive Peak Forward Surge Current
(TP=10uS, Pulse)
TC=25oC
125
A
TC=25oC
PD
70
23
W
W
Power Dissipation
TC=125oC
Operating Junction Temperature
Storage Temperature
TJ
175
oC
oC
oC/W
TSTG
RθJC
-55 to 175
2.1
Thermal Resistance Junction to Case
Electrical Characteristics
PARAMETER
SYMBOL
TEST CONDITION
IR =100uA, TJ=25oC
IF =2A, TJ=25oC
MIN.
TYP.
-
MAX. UNITS
DC Blacking Voltage
VDC
1200
-
V
V
-
-
-
-
1.6
2.4
<1
3
1.8
2.6
50
Forward Voltage
VF
IR
IF =2A, TJ=175oC
V
VR =1200V, TJ=25oC
VR =1200V, TJ=175oC
IF =2A, di/dt=300A/uS,
VR =400V, TJ=25oC
uA
uA
Reverse Current
250
Total Capacitive Charge
QC
-
14
-
nC
VR =1V, TJ=25oC, f=1MHz
VR =400V, TJ=25oC, f=1MHz
VR =800V, TJ=25oC, f=1MHz
-
-
-
129
17
-
-
-
pF
pF
pF
Total Capacitance
C
15
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SiC02A120S
TYPICAL CHARACTERISTIC CURVES
Fig.1 Forward Characteristics
Fig.3 Capacitance vs. Reverse Voltage
Fig.5 Power Derating
Fig.2 Reverse Characteristics
Fig.4 Non-Repetitive Peak Forward Surge Current
(Pulse Mode)
Fig.6 Current Derating
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SiC02A120S
Part No Packing Code Version
Part No Packing Code
Package Type
TO-252AA
Packing Type
Marking
Version
SIC02A120S_L2_00001
3,000pcs / 13” reel
02A120S
Halogen free
Mounting Pad Layout
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SiC02A120S
Disclaimer
● Reproducing and modifying information of the document is prohibited without permission from Panjit
International Inc..
● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime
without notification. Please refer to our website for the latest document.
● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product
including damages incidentally and consequentially occurred.
● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International
Inc. for any damages resulting from such improper use or sale.
● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when
complaining.
June 15,2016-REV.02
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