SS12E_09 [PANJIT]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SS12E_09 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12E~SS16E
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
CURRENT 1.0 Amperes
VOLTAGE
20 to 60 Volts
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• High current capacity ,low VF
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
• ESD Passed devices : Air mode 15KV ,human body mode 8KV
MECHANICALDATA
• Case: JEDEC DO-214AC molded plastic
• Terminals:Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.0023 ounce, 0.0679 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PARAMETER
SYMBOL
VRRM
SS12E
20
SS13E SS14E SS15E SS16E UNITS
Maximum Recurrent Peak Reverse Voltage
30
21
30
40
28
40
50
35
50
60
42
60
V
V
V
A
A
V
Maximum RMS Voltage
VRMS
VDC
IF(AV)
IFSM
VF
14
20
Maximum DC Blocking Voltage
Maximum Average Forward Current at TL=75O
C
1.0
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
30
Maximum Forward Voltage at 1.0A ( Note 1)
0.5
0.7
Maximum DC Reverse Current at TJ=25O
Rated DC Blocking Voltage TJ=100O
C
0.2
50
0.1
20
IR
mA
C
RθJL
RθJA
28
88
Typical Thermal Resistance ( Note 2)
O C / W
O C
O C
-55 to +125
Operating Junction Temperature Range
Storage Temperature Range
TJ
-55 to +150
TSTG
-55 to +150
NOTES:
1.Pulse Test with PW =300µsec, 1% Duty Cycle.
2.Mounted on P.C. Board with 5.0mm2 (.013mm thick) copper pad areas.
STAD-MAR.10.2009
PAGE . 1
SS12E~SS16E
RATING AND CHARACTERISTIC CURVES
30
25
1.0
=20-30V
=40-60V
.75
20
15
10
.50
SINGLEPHASEHALFWAVE60Hz
RESISTIVEORINDUCTIVELOAD
P. C . B M O U N T E D
ON 0.2X 0.2"( 5.0 5.0mm)
X
.25
COPPERPADAREAS
5
0
0
0
25
50
75
100
125
150
175
1
10
100
LEAD TEMPERATURE, oC
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON-REPETITIVEPEAKFORWARD
SURGE CURRENT
Fig.1-FORWARD CURRENT DERATING CURVE
105
104
103
10
20-40V
50-60V
T
J C
=125O
1.0
0.1
102
101
100
10-1
10-2
T
J
=75O
C
TJ C
=25O
T
A
= 25OC
0.8
0.01
0
0.2
0.4
0.6
1.0
20
40
60
80
100
FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,%
Fig.4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3-TYPICAL REVERSE CHARACTERISTIC
STAD-MAR.10.2009
PAGE . 2
SS12E~SS16E
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 7.5K per 13" plastic Reel
T/R - 1.8Kper 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-MAR.10.2009
PAGE . 3
相关型号：
SS12FL-TP
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-221AC, SMA-FL, 2 PIN
MCC
SS12FL-TP-HF
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-221AC, SMA-FL, 2 PIN
MCC
SS12G
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, PLASTIC PACKAGE-2
MCC
SS12G-TP
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
MCC
SS12HE3/5AT
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明