TSP220A [PANJIT]
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE; 轴向引线双向晶闸管浪涌保护器件
| 型号： | TSP220A |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE |
| 文件： | 总6页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
TSP058A~TSP320A
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
DO-15
Unit: inch ( mm )
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
.034(.86)
.028(.71)
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
MECHANICALDATA
• Case: JEDEC DO-15 molded plastic
.140(3.6)
.104(2.6)
• Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
• Polarity: Bi-directional
• Weight: 0.015 ounce, 0.4 gram
SUMMARY ELECTRICAL CHARACTERISTICS
Rated Repetitive
PeakOff-State
Voltage
Repetitive
PeakOff-State
Current
Breakover On-State
Breakover Holding
Current Currnet (f = 1 MHz, Vac = 15 mVRMS)
Off-State Capacitance
Voltage
Voltage
Part Number
Max.
Max.
Max.
Max.
Max.
Min.
Typ.
Max. Typ.
Max.
V
DRM
V
BO @ IBO
V
T
@ 1A
I
DRM
µA
5
I
BO
I
H
C
O
@ 0 Vdc
pF
C
O
@ 50 Vdc
pF
V
V
V
5
mA
800
800
800
800
800
800
800
800
800
800
800
(3)
mA
150
150
150
150
150
150
150
150
150
150
150
(2,3)
TSP058A
TSP065A
TSP075A
TSP090A
TSP120A
TSP140A
TSP160A
TSP190A
TSP220A
TSP275A
TSP320A
notes
58
65
77
44
39
37
34
32
29
28
28
27
27
27
(3)
66
16
15
13
12
12
9
24
23
20
18
17
16
15
14
14
13
13
(3)
88
98
5
5
64
75
5
5
57
90
130
160
180
220
260
300
350
400
(3,5,6)
5
5
54
120
140
160
190
220
275
320
(1,3)
5
5
48
5
5
47
5
5
43
9
5
5
40
8
5
5
40
8
5
5
38
8
5
5
38
8
(3)
(3)
(3)
(3)
NOTES:
1. Specific VDRM values are available by request.
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device.
5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform
6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KW, 1/2 AC cycle
DATE : SEP.02.2002
PAGE . 1
CAPACITANCE CHARACTERISTICS
F = 1 MHz, Vac = 15 mVrms
Off-State Capacitance
CO
pF
Part Number
0 Vdc
1 Vdc
2 Vdc
5 Vdc
50 Vdc
Max.
Typ.
44
39
37
34
32
29
28
28
27
27
27
Max.
66
64
57
54
48
47
43
40
40
38
38
Typ.
40
35
33
30
28
25
25
24
23
23
23
Max.
51
49
42
39
33
32
27
25
25
24
24
Typ.
36
31
29
26
24
21
21
20
19
19
19
Max.
49
47
40
37
31
30
24
23
23
22
22
Typ.
33
28
26
23
21
18
18
17
16
16
16
Max.
44
42
35
32
26
25
20
18
18
17
17
Typ.
16
15
13
12
12
9
TSP058A
TSP065A
TSP075A
TSP090A
TSP120A
TSP140A
TSP160A
TSP190A
TSP220A
TSP275A
TSP320A
24
23
20
18
17
16
15
14
14
13
13
9
8
8
8
8
RATING AND CHARACTERISTIC CURVES
TJ= 25 O
C
TJ= 25 O
C
vd=15mVRMS AC
f=1 MHZ
vd=15mVRMS AC
f=1 MHZ
30
25
20
15
10
5
60
50
40
30
20
10
TSP220SA
VD=0 Volts DC
VD=50 Volts DC
0
50
100
150
200
VDRM
250
300
350
0.1
1
10
100
VD Off-state Voltage (V)
Typical Capacitance v.s. Rated Repetitive Off-state Voltage
Typical Capacitance v.s. Off-state Voltage
100
10A, 10/1000 microseconds
TSP220SC
300
10
1
250
200
150
100
0.1
0.01
TSP220SB
0.001
TSP220SA
25
0
25
50
75
100
125
0.0001
TJ , Junction Temperature (OC)
0
20
40
60
80
100
120
140 150
TJ ( OC )
Typical Holding Current
Typical Off-state Current v.s Junction Temperature
DATE : SEP.02.2002
PAGE . 2
RATING AND CHARACTERISTIC CURVES
10A, 10/1000 microseconds
10A, 10/1000 microseconds
-0.1
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-1.0
-1.5
-2.0
-2.5
-3.0
-25
0
25
50
75
100
125
150
200
250
300
350
TJ , Junction Temperature (OC)
TJ , Junction Temperature (OC)
Typical Holding Current Temperature Coefficient
Typical Holding Current Temperature Coefficient
.16
0.14
0.12
0.1
0.08
50
100
150
Rated VDRM at TJ=25oC (V)
Temperature Coefficient of VDRM
200
250
300
350
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in
the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar
devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and
information herein are subject to change without notice. New products and improvements in products and their characterization are
constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the
most recent information and for any special characteristics not described or specified.
© Copyright PanjIt International Inc. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and
may changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
PanJit Internatioal Inc.
http://www.panjit.com.tw email: sales@panjit.com.tw
DATE : SEP.02.2002
PAGE . 3
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature.
3. Select surge current ratings (IPPS and ITSM) ³ those which the application must withstand.
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (TJ = 25 °C UNLESS OTHERWISE NOTED)
Non-Repetitive Peak
On-State Surge Current
Rating
Non-Repetitive Peak Pulse Current
Symbol
Short-Circuit Current Wave
Open-Circuit Voltage Wave
Value
I
PPS
I TSM
2/10 µs
2/10 µs
175 A
8/20 µs 10/160 µs 5/310 µs
1.2/50 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs
150 A 100 A 85 A 70 A 50 A
(1,2,4,5,6)
10/560 µs 10/1000 µs
20A
Notes
(1,2,3,4)
Notes:
1. Thermal accumulation between successive surge tests is
not allowed.
% Ipps
100%
80%
60%
40%
20%
0%
2. The device under test initially must be in thermal
equilibrium with TJ = 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated TJ.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.
5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.
To Ta
Tb
T1
Time
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B (Duration time to 50% level of Ipps) = T1 - T0
DATE : SEP.02.2002
PAGE . 4
MAXIMUM THERMAL RATINGS
Unit
Rating
Symbol
Value
Storage Junction Temperature Range
Operating Junction Temperature Range
Operating Ambient Temperature Range
TSTG
TJ
-50 to 150
-40 to 150
-40 to 65
OC
OC
OC
Ta
Notes:
PCB board mounted on minimum foot print.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
OC / W
Thermal Resistance Junction to Leads T
L on tab adjacent to
RθJL
Max. 20
plastic. Both leads soldered to identical pad sizes.
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)
Parameters
Test Conditions
Symbol
Min.
Max.
5
Unit
Repetitive Peak
Off-State Current
V
D
= rated VDRM
I
DRM
µA
Breakover Current
Holding Current1
On-State Voltage
f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, R
L
= 1 KΩ , 1/2 AC cycle
I
BO
800
mA
mA
V
10/1000µs waveform, ISC = 10A, VOC = 62 V, R = 400 Ω
L
I
H
150
I
T
= 1 A, Tw = 300 µs, 1 pulse
V
T
5
Notes:
Specific IH values are available by request.
DATE : SEP.02.2002
PAGE . 5
+I
I
PPS
I
I
TSM
T
I
BO
I
I
H
BR
I
DRM
_
+V
V
V
DRM
V
T
VBO
V
BR
_
I
Characteristic
Symbol
Value
Maximum voltage across the device in or at breakdown measured
under a specified voltage and current rate of rise
V
BO
Breakover Voltage
Breakover Current
Holding Current
On-state current
On-state voltage
I
BO
Instantaneous current flowing at the breakover voltage (VBO)
I
H
T
Minimum current required to maintain the device in the on-state
I
Current through the device in the on-state condition
Voltage across the device in the on-state condition at a specified
current (IT)
V
T
The highest instantaneous value of the off-state voltage, including all
repetitive transient voltages but excluding all nonrepetitive transient
voltages
V
DRM
Rated Repetitive Peak Off-State Voltage
Repetitive Peak Off-State Current
Non-Repetitive Peak pulse current
The maximum (peak) value of current that results from the application
of VDRM
I
I
DRM
PPS
Rated maximum value of peak impulse current of specified amplitude
and waveshape that may be applied without damage to the device
under test
Rated value of the rate of rise of current that the device can withstand
without damage.
di/dt
dv/dt
Critical rate of rise of on-state current
Critical Rate of Rise of Off-State Voltage
The maximum rate of rise of voltage (belowVDRM) that will not cause
switching from the off-state to the on-state.
DATE : SEP.02.2002
PAGE . 6
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