UF1K [PANJIT]
SURFACE MOUNT ULTRAFAST RECTIFIER; 表面贴装超快整流器
| 型号： | UF1K |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SURFACE MOUNT ULTRAFAST RECTIFIER |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
UF1A~UF1K
SURFACE MOUNT ULTRAFAST RECTIFIER
Unit: inch (mm)
SMB/DO-214AA
VOLTAGE 50 to 1000 Volts
CURRENT
1.0 Amperes
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Ultrafast recovery times for high efficiency
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
.185(4.70)
.160(4.06)
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
.012(.305)
.006(.152)
Pb free: 98.5% Sn above
MECHANICALDATA
Case: JEDEC DO-214AA molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
UNITS
UF1A
50
UF1B
100
UF1D
200
UF1G
400
UF1J
600
UF1K
800
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
V
Maximum RMS Voltage
35
50
70
140
200
280
400
420
600
560
800
V
V
A
A
V
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Current .375"(9.5mm)
lead length at TL
=100OC
I
AV
1.0
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
I
FSM
30
Maximum Forward Voltage at 1.0A
V
F
1.0
1.4
1.7
Maximum DC Reverse Current at T
A
=25OC
10.0
100
I
R
uA
Rated DC Blocking Voltage
T
A
=100OC
Typical Junction capacitance (Note 2)
C
J
17
30
pF
OC / W
ns
Typical Thermal Resistance(Note 3)
RθJL
Maximum Reverse Recovery Time (Note 1)
Operating Junction and Storage Temperature Range
T
RR
50
100
T
J
,TSTG
-50 TO +150
OC
NOTES:1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
STAD-MAY.19.2004
PAGE . 1
RATING AND CHARACTERISTIC CURVES
1.2
1.0
0.8
0.6
35
30
25
20
15
0.4
SINGLE PHASE
HALF WAVE
60Hz
10
5
RESISTIVE OR
INDUCTIVE LOAD
.375" LEAD LENGTHS
0.2
0
25
50
75
100
125 150
175
1
1
5
10
50
100 200
1000
LEAD TEMPERATURE, O
C
NO. OF CYCLES AT 60Hz
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.2 PEAK FORWARD SURGE CURRENT
10
102
101
400V
50-200V
T
J
=125O
C
1.0
100
10-1
10-2
600-800V
T
J
J
=75O
C
0.1
T
=25O
C
10-3
10-4
V
V
RRM=50-200V
RRM=600-800V
TA C
=25O
0.01
0.4
0
20
40
60
80
100
120
0.6
0.8
1.0
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.3 FORWARD CHARACTERISTICS
Fig.4 TYPICAL REVERSE CHARACTERISTICS
100
TJ
=25OC
f=1.0MHz
Vsig=50mVp-p
10
1
0.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
Fig.5 TYPICAL JUNCTION CAPACITANCE
STAD-MAY.19.2004
PAGE . 2
相关型号：
UF1K-G
Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
SENSITRON
UF1K-GT3
Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
SENSITRON
UF1K-T3
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
SENSITRON
UF1K-T3-LF
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
WTE
UF1K-TP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明