PD25025F [PEAK]
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET; 25瓦， 2.3GHz的 - 为2.5GHz ， N沟道电子模式，横向MOSFET
| 型号： | PD25025F |
| 厂家： | 
PEAK ELECTRONICS GMBH |
| 描述： | 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET |
| 文件： | 总4页 (文件大小：1624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD25025F
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics
Introduction
Parameter
Sym
Value
Unit
The PD25025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for
Thermal Resistance,
Junction to Case:
R JC
2.1
°C/W
2.3GHz - 2.5GHz Class AB wireless base station
amplifier applications.
This device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver
ing a minimum output power of 25 W, it is ideally
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Sym Value Unit
65 Vdc
VGS –0.5, +15 Vdc
VDSS
suited for today's RF power amplifier applications.
-
ID
4.25
Adc
W
Total Dissipation at TC = 25 °C: PD
120.7
Derate Above 25 °C:
—
0.69
200
W/°C
°C
Operating Junction Tempera-
ture
TJ
Storage Temperature Range
TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
(flanged)
PD25025F
Figure 1. Available Packages
Features
Table 3. ESD Rating*
•
Application Specific Performance, 2.5 GHz
Minimum (V)
Class
HBM
MM
500
50
1B
A
•
Typical 2-Tone Performance
Average Load Power – 12.5 W
ηD – 30%
CDM
1500
4
Power Gain – 12.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
•
Typical CW Performance
Average Load Power – 25 W
ηD – 40%
Power Gain – 12.0 dB
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
PD25025F
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 100 uA)
Gate-source Leakage Current (VGS =15V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
V(BR)DSS
IGSS
65
—
—
—
—
—
—
0.1
1.0
Vdc
µAdc
mAdc
IDSS
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
Gm
3
3.5
3.7
0.3
—
S
1
)
Gate Threshold Voltage (VDS = 10 V, ID = 1mA
VGS(TH)
VGS(Q)
VDS(ON)
—
2.7
—
Vdc
Vdc
Vdc
—
4.5
—
Gate Quiescent Voltage (VDS = 28 V, IDQ = 330 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
Table 5. RF Characteristics
Rating
Symbol
Min
Typ
Max
Unit
Input capacitance * (including matching capacitor)
(VDS=28V, VGS=0V, f = 1MHz)
Output capacitance * (including matching capacitor)
(VDS= 28V, VGS=0V, f = 1MHz)
Feedback capacitance *
(VDS=28V, VGS=0V, f = 1MHz)
CISS
-
74
-
-
-
pF
COSS
CRSS
-
-
352
1.6
pF
pF
* Part is internally matched on input and output.
(InBroadband Fixture, Tc=25° C unless otherwise specified
)
RF and Functional Tests
Rating
Symbol
Min
Typ
Max
Unit
CW Low Power Gain, Pout=8W
VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz
GL
12.5
-
-
dB
CW Power Gain, Pout = 25 W
VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz
GP
12
35
-
-
-
dB
%
CW Drain Efficiency, Pout = 25 W,
VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz
40
ηD
Two-Tone Common-Source Amplifier Power Gain
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2500 MHz and f2=2500.1 MHz
Two-Tone Intermodulation Distortion
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2500 MHz and f2=2500.1 MHz
Two-Tone Drain Efficiency
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2500 MHz and f2=2500.1 MHz
Input Return Loss
GTT
12.5
-
-
-
dB
dBc
%
IMD
-30
30
-
28
-
26
ηD2Τ
VDD =28V, Pout = 25 W PEP, IDQ=330mA
f1 =2300 MHz and 2500 MHz, Tone Spacing =
100kHz
IRL
-
-
-
-9
-
dB
Load Mismatch Tolerance
VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz
VSWR
10:1
Ψ
2
PD25025F
N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
1
1
2
3
PEAK DEVICES
PD25025F
3
XXXX
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
XXXX - 4 Digit Trace Code
PD25025F
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET
RF Power Product Information
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