PT7C5009AH3-2DEE [PERICOM]
IC 30 MHz, OTHER CLOCK GENERATOR, UUC, LEAD FREE, DIE, Clock Generator;型号: | PT7C5009AH3-2DEE |
厂家: | PERICOM SEMICONDUCTOR CORPORATION |
描述: | IC 30 MHz, OTHER CLOCK GENERATOR, UUC, LEAD FREE, DIE, Clock Generator 时钟 外围集成电路 |
文件: | 总17页 (文件大小:430K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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•
Clock output (fO, fO/2, fO/4, fO/8,fO/16, fO/32
determined by internal connection, fO is oscillator
frequency)
Features
•
Capacitors 6pF CG and 10pF CD built-in
•
Standby function with typical 6µA (VDD = 5 V)
low standby current (PT7C5009AL only)
Power-save pull-up resistor built-in
(PT7C5009ALx only)
•
8-pin SOIC package (PT7C5009xxxW), Die form
(PT7C5009xxxDE) and Wafer form
(PT7C5009AxxWF) available
•
•
•
Inverter amplifier feedback resistor built-in
16 mA (VDD = 4.5 V) drive capability
(PT7C5009AKx, ALx, ANx, CNx)
4 mA (VDD = 4.5 V) drive capability
(PT7C5009AHx)
Description
The PT7C5009 series are crystal oscillator module ICs
that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency
capacitors are built-in, eliminating the need for
external components to make a stable fundamental-
harmonic oscillator.
•
•
•
•
Output three-state function
2.25 to 5.5 V supply voltage (PT7C5009ALxDE)
2.7 to 5.5 V supply voltage (PT7C5009AHx,
ALxW, ANx, CNx)
Application
•
Used for crystal oscillator
Ordering Information
Package
type
Package
type
Package
type
Part no.
Part no.
Part no.
PT7C5009AHxW
PT7C5009AHx-1DE
PT7C5009AHx-2DE
PT7C5009AHx-1WF Wafer form PT7C5009ANx-2DE
PT7C5009AHx-2WF Wafer form PT7C5009ANx-1WF
PT7C5009AKxW
PT7C5009AKx-1DE
PT7C5009AKx-2DE
PT7C5009AKx-1WF Wafer form PT7C5009ALx-2DE
SOIC-8
DIE form
DIE form
PT7C5009AKx-2WF
PT7C5009ANxW
PT7C5009ANx-1DE
Wafer form PT7C5009ALx-1WF Wafer form
SOIC-8
DIE form
DIE form
PT7C5009ALx-2WF Wafer form
PT7C5009CNxW SOIC-8
PT7C5009CNx-1DE DIE form
Wafer form PT7C5009CNx-2DE DIE form
Wafer form PT7C5009CNx-1WF Wafer form
SOIC-8
DIE form
DIE form
PT7C5009ANx-2WF
PT7C5009ALxW
PT7C5009ALx-1DE
SOIC-8
PT7C5009CNx-2WF Wafer form
DIE form
DIE form
Note 1: Lead free package is available by adding “E” after each part no. For example: PT7C5009AHxWE.
Note 2: Below is the detailed definition of part no.
Note 3: “-1” & “-2” show the different die thickness; “-1”: 265±25um; “-2”: 220±20um.
5009
PT7C
1
AH
W
Device Type
Package
Clock series
W: SOIC-8
DE: die form
WF: Wafer form
XO 5009 Series
Serial Type
Output frequency
Output freq. (MHz)
3V VDD 5V VDD
VDD range
Standby
function
Suffix foutput (V)
Series
AH
Series
(V)
1
2
3
4
5
6
fO
AK,
CN
AH
AK
AN
AL
CN
2.7~5.5
4.5~5.5
2.7~5.5
2.25~5.5
2.7~5.5
16
30
40
40
40
30
fO/2
fO/4
fO/8
fO/16
fO/32
-
No
AL,
AN
40
40
30
Yes
No
PT0194(05/06)
1
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Series Configuration
Outp
ut
freq.
Output at 3V VDD
Max load Max freq.
Output at 5V VDD
Max load Max freq.
Output
duty
level
VDD
(V)
Input
level
Standby
function
Series
Part No.
(pF)
(MHz)
(pF)
(MHz)
PT7C5009AH1
fo
PT7C5009AH2 fo /2
PT7C5009AH3 fo /4
PT7C5009AH4 fo /8
2.7 ~
5.5
AH
AK
15
16
15
30
TTL
TTL
CMOS
TTL
-
-
PT7C5009AK1
PT7C5009AK2 fo /2
PT7C5009AN1 fo
fo
4.5 ~
5.5
-
-
15
50
40
40
PT7C5009AN2 fo /2
PT7C5009AN3 fo /4
PT7C5009AN4 fo /8
PT7C5009AN5 fo /16
PT7C5009AN6 fo /32
2.7 ~
5.5
AN
30
40
TTL
CMOS
-
PT7C5009AL1
fo
PT7C5009AL2 fo /2
PT7C5009AL3 fo /4
PT7C5009AL4 fo /8
PT7C5009AL5 fo /16
PT7C5009AL6 fo /32
2.7 ~
5.5
AL
CN
30
15
40
30
50
50
40
30
CMOS CMOS
√
PT7C5009CN1
fo
2.7 ~
5.5
TTL
CMOS
-
PT7C5009CN2 fo /2
Block Diagram
PT0194(05/06)
2
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Function Description
Series
Q
Oscillator
INH
HIGH (or open)
Low
Any fO , fO /2, fO /4, fO /8, fO /16 or fO /32 output frequency
High impedance
AH, AK, AN, CN
Normal operation
Stopped
HIGH (or open)
Low
Any fO , fO /2, fO /4, fO /8, fO /16 or fO /32 output frequency
High impedance
AL
AH, AK, AN, CN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
AL series
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Power-save Pull-up Resistance (AL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
Pin Configuration
PT7C5009xxxW
1
8
INH
XT
VDD
NC
NC
Q
2
3
7
6
XT
GND
4
5
SOIC-8 package
Pin Description
Pin
Sym.
Type
Description
Output state control input. High impedance when LOW. In the case of the PT7C5009ALxS,
the oscillator stops and power-saving pull-up resistor built in.
1
2
INH
I
XT
XT
I
Amplifier input.
Crystal oscillator connected between XT and XT
3
4
O
P
Amplifier output.
Ground.
GND
Output. Output frequency (fo, fo /2, fo /4, fo /8, fo /16, fo /32) determined by internal
connection, fo is oscillator frequency.
5
Q
O
6,7
8
NC
No connection.
Supply voltage.
VDD
P
PT0194(05/06)
3
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Maximum Ratings
Note:
o
o
Storage Temperature (die form).....................................................- 65 C to +150 C
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other condi-tions above those indicated in
the operational sec-tions of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
o
o
Storage Temperature (package form) ........................................- 55 C to +125 C
o
o
Ambient Temperature with Power Applied..............................................- 40 C to +85 C
Supply Voltage to Ground Potential (VDD to GND ..................- 0.5V to7.0V
DC Input (All Other Inputs except VDD & GND) . -0.5V to VDD +0.5V
DC Output Current (all outputs) ................................................. 25mA
Power Dissipation...................................................................... 500mW (package form)
Recommended Operating Conditions
Sym
VDD
VIN
Parameter
Supply voltage
Input voltage
Series
Condition
Min Typ Max
Unit
2.7
-
3.3
f ≤ 16MHz
f ≤ 30MHz
f ≤ 40MHz
f ≤ 40MHz
f ≤ 30MHz
AH series
4.5
-
5.5
AK series
AN series
CN series
2.7
-
5.5
V
2.25
2.3
-
-
2.75
2.7
f ≤ 20MHz
Die form
f ≤ 30MHz
f ≤ 40MHz
f ≤ 40MHz
f ≤ 14.4MHz
AL series
2.7
-
5.5
Package
form
2.4
GND
-20
-
-
-
2.7
VDD
80
All series
AH series
V
f ≤ 16MHz, 2.7V ≤ VDD ≤ 3.6V
f ≤ 30MHz, 4.5V ≤ VDD ≤ 5.5V
f ≤ 30MHz
-40
-
85
AK series
AN series
CN series
-20
-20
-40
-20
-40
-10
-40
-40
-20
-20
-20
-40
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
80
80
85
80
85
70
85
85
80
80
80
85
80
30MHz < f ≤ 40MHz
f ≤ 40MHz, 2.7V ≤VDD < 4.5V
Die form
f ≤ 40MHz, 4.5V ≤VDD ≤5.5V
f ≤ 40MHz, 2.7V ≤VDD < 5.5V
f ≤ 30MHz, 4.5V ≤VDD ≤5.5V
Package
form
Operating
temperature
TOPR
°C
f ≤30MHz, 2.7V ≤VDD < 4.5V
f ≤30MHz, 4.5V ≤VDD ≤5.5V
f ≤ 40MHz, 2.7V ≤ VDD ≤5.5V
Die form
f ≤ 30MHz, 2.3V ≤ VDD ≤2.7V
f ≤ 20MHz, 2.25V ≤ VDD ≤2.75V
f ≤ 40MHz, 2.7V ≤ VDD ≤5.5V
f ≤ 30MHz, 2.7V ≤ VDD ≤5.5V
f ≤ 14.4MHz, 2.4V ≤ VDD ≤2.7V
AL series
Package
form
PT0194(05/06)
4
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation: VDD = 2.7 to 3.3V, PT7C5009AH/AN/CN: TA = -20 to 80°C, PT7C5009AL: TA = -40 to 85°C, unless otherwise
noted.
Sym
Parameter
Condition
Min
Typ Max Unit
PT7C5009AH1
PT7C5009AH2
-
-
4.5
3
10
7
16 MHz crystal
PT7C5009AH3
PT7C5009AH4
-
1.5
3
PT7C5009AL1
PT7C5009AN1
PT7C5009AL2
PT7C5009AN2
PT7C5009AL3
PT7C5009AN3
PT7C5009AL4
PT7C5009AN4
PT7C5009AL5
PT7C5009AN5
PT7C5009AL6
PT7C5009AN6
-
-
-
-
-
-
8
5
4
3
3
2
17
11
9
INH =open,
Measurement cct 3,
load cct 2, CL = 15pF
40 MHz crystal.
For
PT7C5009ALxW,
TA = -20 to 80°C.
IDD
Current consumption
mA
7
6
5
PT7C5009CN1
PT7C5009CN2
PT7C5009ALxW
-
-
-
7
4
2
15
9
30 MHz crystal,
TA = -10 to 70 °C
5
INH = GND , Measurement cct 3
IST
Standby current
µA
V
PT7C5009ALxDE
-
4
10
PT7C5009AHx
PT7C5009ANx
PT7C5009CNx
2.0
-
-
-
-
-
-
-
VIH High level input voltage
VIL Low level input voltage
INH pin
PT7C5009ALx
0.7VDD
PT7C5009AHx
PT7C5009ANx
PT7C5009CNx
-
-
0.3
V
INH pin
PT7C5009ALx
PT7C5009AHx
INH = GND PT7C5009ANx
PT7C5009CNx
0.3VDD
200
40
kΩ
Measurement cct 4,
DD = 3 V
0.6
40
-
-
12
MΩ
RUP INH pull-up resistance
INH = GND PT7C5009ALx
INH = 2.1V
V
200
kΩ
16 MHz
40 MHz
PT7C5009AHx
PT7C5009ALx
PT7C5009ANx
PT7C5009CNx
-
-
-450
-200
-
-
-RL
Negative resistance
VDD = 3 V, TA = 25°C
Ω
-
-100
-
Rf
CG
CD
Feedback resistance
Built-in capacitance
Measurement cct 5
0.4
5.58
9.3
-
6
1.1
MΩ
6.42
10.7
Design value, determined by the internal wafer pattern
pF
10
-To be continued -
PT0194(05/06)
5
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
-To be continued –
3V operation: VDD = 2.7 to 3.3V, PT7C5009AH/AN/CN: TA = -20 to 80°C, PT7C5009AL: TA = -40 to 85°C, unless otherwise
noted.
Sym
Parameter
Condition
Min Typ Max
Unit
IOH = 2mA PT7C5009AHx 2.2
-
-
PT7C5009ALx
PT7C5009AN1 2.2
PT7C5009AN2
PT7C5009AN3
PT7C5009AN4
-
-
VOH High level output voltage Q: Measurement cct 1
V
IOH = 8mA
PT7C5009AN5
PT7C5009AN6
2.1
-
-
PT7C5009CN1
PT7C5009CN2
IOL = 2mA PT7C5009AHx
-
-
-
-
0.4
0.4
PT7C5009ALx
IOL = 8mA PT7C5009ANx
PT7C5009CNx
VOL Low level output voltage Q: Measurement cct 1
V
VOH = VDD
-
-
-
-
10
10
Q: Measurement cct 2, VINH
LOW
=
IZ
Output leakage current
µA
V
OL = GND
PT0194(05/06)
6
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
5V operation: VDD = 4.5 to 5.5 V, TA = -40 to 80°C, unless otherwise noted.
Sym.
Parameter
Condition
Min
Typ
Max
Unit
PT7C5009AH1
PT7C5009AH2
PT7C5009AH3
PT7C5009AH4
-
-
9
6
20
13
-
4
9
30 MHz crystal
PT7C5009CN1
-
-
10
7
22
15
INH = open,
Measurement cct 3,
load cct 2, CL = 15 pF
PT7C5009CN2
PT7C5009AL1DE
PT7C5009AN1DE
PT7C5009AL2DE
PT7C5009AN2DE
PT7C5009AL3DE
PT7C5009AN3DE
PT7C5009AL4DE
PT7C5009AN4DE
PT7C5009AL5DE
PT7C5009AN5DE
PT7C5009AL6DE
PT7C5009AN6DE
PT7C5009AL1W
PT7C5009AN1W
PT7C5009AL2W
PT7C5009AN2W
PT7C5009AL3W
-
-
-
-
-
-
-
-
-
-
-
12
8
26
17
13
11
10
9
6
40 MHz crystal
5
5
4
12
8
26
17
13
11
10
Current
consumption
IDD
mA
6
40 MHz crystal, PT7C5009AN3W
TA = -20 to 80°C
PT7C5009AL4W
PT7C5009AN4W
PT7C5009AL5W
PT7C5009AN5W
PT7C5009AL6W
PT7C5009AN6W
5
5
-
-
4
9
PT7C5009AK1
12
26
40 MHz crystal,
TA=-20 to +80°C
INH = open,
Measurement cct 3,
load cct 1, CL = 15 PF
PT7C5009AK2
-
8
17
PT7C5009ALxW
PT7C5009ALxDE
-
-
6
15
30
INH = GND , Measurement cct 3
IST
Standby current
µA
12
-To be continued -
PT0194(05/06)
7
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
- To be continued -
5V operation: VDD = 4.5 to 5.5 V, TA = -40 to 80°C, unless otherwise noted.
Sym.
Parameter
Condition
Min
Typ
Max
Unit
PT7C5009AHx
PT7C5009AKx
PT7C5009ANx
PT7C5009CNx
PT7C5009ALx 0.7VDD
PT7C5009AHx
PT7C5009AKx
PT7C5009ANx
PT7C5009CNx
PT7C5009ALx
PT7C5009AHx
2
-
-
-
-
-
-
-
VIH
High level input voltage
INH
INH
V
-
0.8
VIL
RUP
-RL
Low level input voltage
INH pull-up resistance
Negative resistance
V
-
0.3VDD
200
INH = GND PT7C5009ANx
PT7C5009CNx
40
kΩ
PT7C5009AKx
Measurement cct 4,
VDD = 5V
0.3
40
-
-
6
MΩ
kΩ
INH = GND
PT7C5009ALx
200
INH = 3.5V
30 MHz
PT7C5009AHx
PT7C5009ALx
PT7C5009AKx
PT7C5009ANx
PT7C5009CNx
-
-
-
-340
-400
-210
-
-
-
VDD = 5V, TA = 25°C
Ω
40 MHz
-
-210
-
Rf
CG
CD
Feedback resistance
Built-in capacitance
Measurement cct 5
0.4
5.58
9.3
-
6
10
-
1.1
6.42
10.7
-
MΩ
Design value, determined by the internal wafer pattern
pF
IOH = 4 mA PT7C5009AHx
PT7C5009AKx
4.0
PT7C5009ALx
PT7C5009AN1,
PT7C5009AN2,
PT7C5009AN3,
PT7C5009AN4,
PT7C5009AN5,
PT7C5009AN6,
PT7C5009CN1,
PT7C5009CN2,
4.0
3.9
-
-
-
VOH High level output voltage Q: Measurement cct 1
V
IOH = 16 mA
-
IOL = 4 mA PT7C5009AHx
PT7C5009AKx
-
-
-
-
0.4
0.4
VOL Low level output voltage Q: Measurement cct 1
V
PT7C5009ALx
I
OL = 16 mA
PT7C5009ANx
PT7C5009CNx
VOH = VDD
Q: Measurement cct 2,
INH=LOW
-
-
-
-
10
10
IZ
Output leakage current
µA
V
OL = GND
PT0194(05/06)
8
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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AC Electrical Characteristics
Output duty level (CMOS)
Output duty level (TTL)
Output duty cycle (CMOS)
Output duty cycle (TTL)
Output Enable/Disable Delay
Note (AL series only): when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and
stable oscillator output occurs after a short delay.
PT0194(05/06)
9
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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3V operation: VDD = 2.7 to 3.3V, PT7C5009AH/AN/CN TA = -20 to 80°C, PT7C5009AL TA = -40 to 85°C, unless otherwise
noted.
Sym
Parameter
Condition
Min Typ Max Unit
PT7C5009AHx
-
-
6
18
9
PT7C5009ALx
PT7C5009AN1
PT7C5009AN2
3.5
CL = 15 pF
PT7C5009AN3
PT7C5009AN4
PT7C5009AN5
PT7C5009AN6
PT7C5009CN1
PT7C5009CN2
-
5
13
Measurement cct 3,
load cct 2,
0.1VDD to 0.9VDD
VDD = 2.3 to 2.7V, TA = –20 to
+80°C, CL = 15 pF
tr
Output rise time
ns
PT7C5009ALx
-
-
4
5
13
12
PT7C5009ALx
PT7C5009AN1
PT7C5009AN2
PT7C5009AN3
PT7C5009AN4
PT7C5009AN5
PT7C5009AN6
PT7C5009CN1
PT7C5009CN2
CL = 30 pF
-
7
16
V
DD = 2.3 to 2.7V, TA = –20 to
+80°C, CL = 30 pF
PT7C5009ALx
PT7C5009AHx
-
-
5.5
6
16
18
PT7C5009ALx
PT7C5009AN1
PT7C5009AN2
-
3.5
9
CL = 15 pF
Measurement cct 3,
load cct 2,
0.9VDD to 0.1VDD
PT7C5009AN3
PT7C5009AN4
PT7C5009AN5
PT7C5009AN6
PT7C5009CN1
PT7C5009CN2
ns
-
5
13
V
DD = 2.3 to 2.7V, TA = –20 to
+80°C, CL = 15 pF
tf
Output fall time
PT7C5009ALx
-
-
4
5
13
12
PT7C5009ALx
PT7C5009AN1
PT7C5009AN2
PT7C5009AN3
PT7C5009AN4
PT7C5009AN5
PT7C5009AN6
PT7C5009CN1
PT7C5009CN2
CL = 30 pF
-
-
7
16
16
VDD = 2.3 to 2.7V, TA = –20 to
+80°C, CL = 30 pF
PT7C5009ALx
5.5
- To be continued -
PT0194(05/06)
10
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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- To be continued -
3V operation: VDD = 2.7 to 3.3V, PT7C5009AH/AN/CN TA = -20 to 80°C, PT7C5009AL TA = -40 to 85°C, unless otherwise
noted.
Sym.
Parameter
Condition
Min
45
Typ Max Unit
PT7C5009AHx
PT7C5009CNx
55
60
CL = 15 pF
40
VDD = 3V
CL = 30 pF
PT7C5009ANx
PT7C5009ALx
PT7C5009ALx
PT7C5009ALx
45
45
40
40
55
Measurement cct 3,
load cct 2, TA = 25°C,
Duty Output duty cycle
%
f ≤40 MHz,
CL = 30 pF
f≤14.4 MHz,
CL = 30 pF
f ≤30 MHz,
CL = 15 pF
55
VDD = 2.4V
60
60
V
DD = 2.5V
Output disable
tPLZ
100
ns
100
delay time1
Measurement cct 6, load cct 2, TA = 25°C,
DD = 3 V, CL ≤15 pF
V
Output enable
tPZL
delay time1
PT7C5009AHx
16
40
30
30
PT7C5009ALxDE
PT7C5009ANx
Measurement cct 3
PT7C5009ALxW
TA = –10
to +70 °C
TA = –20
to +80 °C
PT7C5009CNx
Maximum
operating
frequency
Measurement cct 3
fmax
MHz
PT7C5009ALxW
PT7C5009ALxW
PT7C5009ALxDE
PT7C5009ALxDE
40
14.4
30
VDD = 2.4 to 2.7V
VDD = 2.3 to 2.7V
Measurement
cct 3
TA = –20
to +80 °C
V
DD = 2.25 to 2.75V
20
Note 1: Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output
is not resumed until after the oscillator start-up time has elapsed.
PT0194(05/06)
11
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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5V operation: VDD = 4.5 to 5.5 V, TA = -40 to 80°C, unless otherwise noted.
Sym
Parameter
Condition
Min
Typ
Max Unit
PT7C5009AHx
4
12
0.1VDD to
0.9VDD
CL = 15 pF
PT7C5009ALx
PT7C5009ANx
PT7C5009CNx
2
2
4
0.4V to
2.4V
Measurement cct 3,
load cct 2
CL = 15 pF PT7C5009AKx
6
tr
Output rise time
ns
PT7C5009ALx
CL = 30 pF PT7C5009ANx
PT7C5009CNx
3.5
7
0.1VDD to
0.9VDD
PT7C5009ALx
CL = 50 pF PT7C5009ANx
PT7C5009CNx
4
4
8
12
4
PT7C5009AHx
0.1VDD to
0.9VDD
CL = 15 pF
PT7C5009ALx
PT7C5009ANx
PT7C5009CNx
2
0.4V to
2.4V
Measurement cct 3,
load cct 2
CL = 15 pF PT7C5009AKx
2
6
tf
Output fall time
ns
PT7C5009ALx
CL = 30 pF PT7C5009ANx
PT7C5009CNx
3.5
7
0.1VDD to
0.9VDD
PT7C5009ALx
CL = 50 pF PT7C5009ANx
PT7C5009CNx
4
8
PT7C5009AHx
PT7C5009AKx
PT7C5009ALx
CL = 50 pF PT7C5009ANx
PT7C5009CNx
CL = 15 pF
45
45
55
Measurement cct 3, load cct 2, TA =
25°C, VDD = 5 V
Duty Output duty cycle
%
55
Output disable
delay time
Output enable delay
tPLZ
100
ns
100
Measurement cct 6, load cct 2, TA = 25°C, VDD
=
5 V, CL ≤15 pF
tPZL
time
PT7C5009AHx
PT7C5009ALxW
PT7C5009CNx
PT7C5009ALxDE
PT7C5009ANx
PT7C5009AKx
PT7C5009ALxW
30
40
MHz
MHz
Measurement cct 3
Maximum operating
fmax
frequency
TA = –20 to +80 °C
TA = –40 to +85 °C
40
30
MHz
MHz
Measurement cct 3
PT7C5009AKx
PT0194(05/06)
12
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Measurement Circuit
Measurement cct 1
Measurement cct 4
R3
R1
R2
5009AK×, AL×, AN1, AN2
R1 : 50Ω
Measurement cct 5
R2 : 250Ω (VDD = 4.5V), 275Ω (VDD = 2.7V)
R3 : 256Ω (VDD = 4.5V), 288Ω (VDD = 2.7V)
5009AN3 to AN6, CN×
R1 : 50Ω
R2 : 245Ω (VDD = 4.5V), 262Ω (VDD = 2.7V)
R3 : 256Ω (VDD = 4.5V), 288Ω (VDD = 2.7V)
5009AH×
R1 : 50Ω
R2 : 1000Ω (VDD = 4.5V), 1100Ω (VDD = 2.7V)
R3 : 1025Ω (VDD = 4.5V), 1150Ω (VDD = 2.7V)
Measurement cct 2
Measurement cct 6
Measurement cct 3
PT0194(05/06)
13
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Load cct 1
Load cct2
R=400ohm
PT0194(05/06)
Ver:5
14
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Mechanical Information
SOIC-8
.0099
0.25
x 45o
.149
.157
3.78
3.99
.0196
0.50
0-8o
0.19
0.25
.0075
.0098
.016
.050
0.40
1.27
.189
.196
4.80
5.00
.2284
.2440
5.80
6.20
.016
.026
1.35
1.75
.053
.068
0.406
0.660
SEATING PLANE
REF
.050
BSC
.0040
.0098
0.10
0.25
DENOTES DIMENSIONS
IN MILLIMETERS
X.XX
X.XX
1.27
.013
.020
0.330
0.508
Note:
1) Controlling dimensions in millimeters.
2) Ref: JEDEC MS-012 AA
PT0194(05/06)
Ver:5
15
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Pad Location of PT7C5009
Sensor
INHB
VDD
XT
Die No.
XTB
Q
GND
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
sensor
INHB
XT
-50
880.00
700.00
510.00
320.00
GND
VDD
Q
167.40
737.90
737.90
130.00
664.60
177.90
167.40
167.40
167.40
XTB
Note: Substrate is connected to GND or VDD or floating.
Die Size: 970µm*930µm (Including scribe line size.)
Die Thickness: PT7C5009xxx-1: 265±25µm; PT7C5009xxx-2: 220±20µm.
Pad Size: 100µm*100µm
PT0194(05/06)
Ver:5
16
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Notes
Pericom Technology Inc.
Email: support@pti.com.cn
Web Site: www.pti.com.cn, www.pti-ic.com
China:
No. 20 Building, 3/F, 481 Guiping Road, Shanghai, 200233, China
Tel: (86)-21-6485 0576 Fax: (86)-21-6485 2181
Asia Pacific: Unit 1517, 15/F, Chevalier Commercial Centre, 8 Wang Hoi Rd, Kowloon Bay, Hongkong
Tel: (852)-2243 3660 Fax: (852)- 2243 3667
U.S.A.:
3545 North First Street, San Jose, California 95134, USA
Tel: (1)-408-435 0800 Fax: (1)-408-435 1100
Pericom Technology Incorporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or
performance and to supply the best possible product. Pericom Technology does not assume any responsibility for use of any circuitry described other than the
circuitry embodied in Pericom Technology product. The company makes no representations that circuitry described herein is free from patent infringement or
other rights, of Pericom Technology Incorporation.
PT0194(05/06)
Ver:5
17
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